Patent application number | Description | Published |
20090096436 | DC-DC CONVERTER - A DC-DC converter includes a series circuit of a main switch and a choke coil and an output capacitor connected to one end of the series circuit and outputs a DC voltage from the one end of the series circuit. A first MOS transistor is connected in parallel to the series circuit and a second MOS transistor is connected in parallel to the output capacitor. A control circuit controls the gate voltages of the first MOS transistor and/or the second MOS transistor so that the first MOS transistor and/or the second MOS transistor outputs a changed target output voltage, whereby the output voltage is made equal to the target voltage at high speed. | 04-16-2009 |
20100270989 | Switching power supply - A switching power supply that can suppress output variation at a time of transition of a control mode from a non-linear control mode to a linear control mode. The switching power supply includes instruction value forming circuitry that forms, in a linear control mode, a linear control instruction value for linearly control a switching circuit based on an error of an output voltage, and forms, in a non-linear control mode, a non-linear control instruction value for non-linearly control the switching circuit. The instruction value forming circuitry predicts, in the non-linear control mode, a linear control instruction value suited to the load current in the non-linear control mode, and uses the predicted linear control instruction value for an initial value of the linear control instruction value at a time of transition from the non-linear control mode to the linear control mode. | 10-28-2010 |
20110068965 | DIGITAL CONTROL SWITCHING POWER SUPPLY UNIT - A digital control switching power supply unit converts an input voltage into a desired output voltage using a digitally controlled pulse width modulation (PWM) signal according to a switching cycle. The power supply unit includes an analog-to-digital converter (ADC). The ADC converts a result of a comparison between an output voltage and a reference voltage to a digital signal during a conversion cycle. The ADC includes a circuit for outputting a phase difference between a switching cycle and the conversion cycle, and a delay circuit. The delay circuit generates a delay output current based on a result of the comparison and the phase difference and determines the conversion time delay according to the delay output current. The delay circuit also generates a delay reference current based on the reference voltage and the phase difference and determining the duration of the conversion cycle according to the delay reference current. | 03-24-2011 |
20110133712 | DIGITAL CONTROL SWITCHING POWER SUPPLY UNIT - A digital control switching power supply unit includes an A/D converter circuit having a delay line circuit that has a delay element array whose delay time is controlled by a bias current, and that converts a current value into a digital signal using a signal transmission delay time, a phase difference detector circuit that detects a phase difference between a switching cycle and an A/D conversion cycle, a charge pump circuit that generates a control voltage in accordance with the phase difference, and a bias current indicator circuit that determines a bias current in accordance with an output voltage of the charge pump circuit and a result of a comparison of a detected value of the output voltage and a reference voltage, wherein the digital control switching power supply unit controls in such a way that the A/D conversion cycle is synchronized with the switching cycle. | 06-09-2011 |
20110215781 | DIGITAL CONTROL SWITCHING REGULATOR HAVING AN INPUT VOLTAGE DETECTION CIRCUIT - A digital control switching regulator of the invention ON/OFF-controls switching elements by digital-controlled pulse width modulation signals and converts an input voltage to a desired output voltage. The switching regulator includes an input voltage detection circuit that includes: a voltage dividing circuit outputting a divided voltage of the input voltage; a comparator section comparing the divided voltage of the input voltage with a first reference voltage and a second reference voltage and outputting a first comparison signal and a second comparison signal indicating comparison results; and a control section controlling a dividing ratio of the voltage dividing circuit based on the first comparison signal and the second comparison signal to obtain the predetermined divided voltage, thereby outputting an input voltage digital signal corresponding to the input voltage. The input voltage digital signal controls controller coefficients for use in the digital control. | 09-08-2011 |
20110279101 | SWITCHING POWER SUPPLY SYSTEM PROVIDED WITH UNDER VOLTAGE LOCK OUT CIRCUIT - A switching power supply system controlling switching operations of switching devices by a control circuit to convert an input voltage into a desired output voltage, the system being provided with a under voltage lock out circuit including: an input voltage detection unit detecting an input voltage and producing an input voltage digital signal corresponding to the input voltage Vin; and a voltage level comparison unit carrying out digital comparison of the input voltage digital signal with each of two voltage detection level data and outputting the results of the comparisons as an output signal, in which by changing voltage detection level data stored in two registers, desired voltage detection levels and hysteresis characteristic are easily actualized. | 11-17-2011 |
20120194157 | SWITCHING REGULATOR PERFORMING OUTPUT VOLTAGE CHANGING FUNCTION - A switching regulator can convert an input voltage to a desired output voltage by ON-OFF controlling switching elements with PWM signals. The switching regulator can include a communication interface circuit that receives external operation instructions, an output voltage setting section that changes an output voltage to an output voltage setting value upon receiving an output voltage changing instruction from the outside, a voltage divider and an ADC that converts an error voltage into a digital error signal e[n], the error voltage being a difference between a reference voltage Vref and a detected output voltage value Vfb. The switching regulator can also include a controller that includes an operation control section for calculating a duty factor signal d[n] to determine an ON time proportion of the switching elements and an output voltage changing control section for controlling operation to change the output voltage. | 08-02-2012 |
20130257517 | CURRENT CORRECTION CIRCUIT FOR POWER SEMICONDUCTOR DEVICE AND CURRENT CORRECTION METHOD - A current-voltage conversion circuit of a current correcting unit having a current detecting terminal connected to a sense terminal of a power semiconductor device converts a sense current into a voltage and detects the voltage. A temperature detecting unit detects the ambient temperature of the power semiconductor device, and a correction unit performs a predetermined operation for correcting a characteristic difference due to the temperature on the basis of the detected temperature and outputs a control signal to a variable voltage source. The variable voltage source changes an output voltage on the basis of the output control signal and adjusts the potential of the sense terminal of the power semiconductor device on the basis of the changed voltage value. In this way, the characteristic difference between a main region and a sense region of the power semiconductor device is corrected. | 10-03-2013 |
20150023066 | CONTROL DEVICE OF A SWITCHING POWER SUPPLY - A control section for a current resonant converter section controls a DC output voltage of a current resonant converter section to settle to a target voltage by varying a resonant period between predetermined two resonant periods based on an error signal between the DC output voltage and the target voltage. A gain converter is provided in a preceding stage of a frequency generator for generating a square waveform signal with a duty ratio of 50% and the gain converter has a setting of a nonlinear gain characteristic that cancels nonlinearity in the input-output characteristics of the current resonant converter section. The nonlinear gain characteristic can be a characteristic of continuous gain conversion or discrete gain conversion. | 01-22-2015 |
Patent application number | Description | Published |
20090154209 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 06-18-2009 |
20100176430 | Semiconductor Device with Reduced Parasitic Inductance - The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are | 07-15-2010 |
20100321969 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 12-23-2010 |
20110278655 | Semiconductor Device with Circuit for Reduced Parasitic Inductance - Parasitic inductance of the main circuit of a power source unit is reduced. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad. | 11-17-2011 |
20120014155 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 01-19-2012 |
20120273893 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 11-01-2012 |
Patent application number | Description | Published |
20100270992 | SEMICONDUCTOR DEVICE - A semiconductor device having two semiconductor chips sealed in a sealant (2-in-1 package) is provided. A power MOSFET chip for control is disposed on an input-side plate lead portion, wherein a source electrode and a gate electrode are formed on a main surface of the chip and the source electrode is connected to an output plate lead portion. A power MOSFET chip for synchronization is disposed on an output-side plate lead portion, wherein a source electrode and a gate electrode are formed on a main surface of the chip, and the second source electrode is connected to a ground-side plate lead portion. The ground-side plate lead portion and gate-side lead portions connected to the gate electrodes, respectively, are provided between the input-side plate lead portion and the output-side plate lead portion. In this manner, heat-dissipation paths via wirings when the 2-in-1 package is mounted on a board can be wide. | 10-28-2010 |
20110181255 | SEMICONDUCTOR DEVICE AND POWER SUPPLY UNIT USING THE SAME - In a power supply unit having high-side and low-side switching elements each including power MOSFETs connected in parallel, the power MOSFETs are controlled so that the number of the transistors in an off state is increased as an output current becomes lower, and particularly, the transistors turned off when the output current is low are disposed on an outer side of a loop formed from a positive terminal of an input capacitor of a printed board to a negative terminal of the input capacitor via the switching elements. Thus, by turning off packages of the power MOSFETs disposed on an outer side of the main circuit loop and turning on packages of the power MOSFETs disposed on an inner side of the loop, the parasitic inductance of a main circuit is reduced, so that the switching loss can be reduced and efficiency in a light load can be improved. | 07-28-2011 |
20110220979 | SEMICONDUCTOR DEVICE AND MULTI-LAYERED WIRING SUBSTRATE - There is provided a semiconductor device in which a wiring inductance of a DC/DC converter formed on a multi-layered wiring substrate can be reduced and the characteristics can be improved. In the semiconductor device, in an input-side capacitor, one capacitor electrode is electrically connected to a power-supply pattern between a control power MOSFET and a synchronous power MOSFET, and the other capacitor electrode is electrically connected to a ground pattern therebetween. The multi-layered wiring substrate includes: a via conductor arranged at a position of the one capacitor electrode for electrically connecting among a plurality of power-supply patterns in a thickness direction; and a via conductor arranged at a position of the other capacitor electrode for electrically connecting among a plurality of ground patterns in a thickness direction. | 09-15-2011 |
Patent application number | Description | Published |
20100127683 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 05-27-2010 |
20110169102 | SEMICONDUCTOR DEVICE INCLUDING A DC-DC CONVERTER HAVING A METAL PLATE - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 07-14-2011 |
20120273892 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring. | 11-01-2012 |
Patent application number | Description | Published |
20150250074 | COOLING STRUCTURE FOR HEATING ELEMENT AND POWER CONVERTER - A cooling structure is provided. The cooling structure includes cooling surfaces on two confronting side surfaces; a plurality of double-sided-cooling power module, the heat receiving block pinching the heating elements arranged in a vertical direction on the confronting side surfaces, first and second cooling devices, each including the heat radiating fins, disposed above the heating elements, extending in a horizontal direction, and a pressure contacting part configured to contact the heating elements and the receiving block with a pressure force. The heat radiation fins are blown from a side of the electric terminal. | 09-03-2015 |
20150340934 | Inverter Device and Inverter Device Integrated with Motor - An inverter device is configured such that a pull-out direction for a direct current cable to be connected an external power source is adjustable without modifying the shape of a motor and the shape of the inverter device body, thereby reducing the packaging volume including the direct current cable. To this end, a DC bus bar | 11-26-2015 |
20160007507 | Power Conversion Device - A power conversion device capable of reducing a temperature variation between a plurality of semiconductor modules is provided. The power conversion device comprises condensers | 01-07-2016 |
20160093788 | Cooling Structure of Heating Element and Power Conversion Device - A cooling structure of a heating element includes: the heating element having at least one cooling surface from which a plurality of pin fins project; a heat receiving plate which has a shape complying with the cooling surface and in which holes are formed at positions facing each pin fin, each pin fin being movably inserted into the holes; a cooler which has a pair of clamping members that sandwich therebetween the heating element and the heat receiving plate while pressing the heating element and the heat receiving plate, and which cools the heat receiving plate; and a space securing part which is provided on the heat receiving plate and suppresses a distance between the pair of clamping members so as not to apply a pressing force by the clamping members to the heating element. | 03-31-2016 |