Patent application number | Description | Published |
20090015699 | IMAGE SENSING APPARATUS DRIVING METHOD, IMAGE SENSING APPARATUS, AND IMAGE SENSING SYSTEM - Since pixel signals are not only added in the row direction but also averaged in the column direction, it is possible to sufficiently increase the frame rate even when the number of pixels increases. Additionally, since the spatial centers of gravity of the added or averaged signals are arranged at equal intervals in a Bayer array, it is possible to reduce false color (moiré) generation and suppress the decrease in the spatial resolution. | 01-15-2009 |
20090050787 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a photoelectric conversion area in which a plurality of photoelectric conversion elements are arranged to convert incident light into electric charges, a plurality of amplifying units are arranged to read and supply signals based on the electric charges of corresponding photoelectric conversion elements to output lines, a plurality of transfer units are arranged to transfer the electric charges of the corresponding photoelectric conversion elements to input units for corresponding amplifying units, and a plurality of voltage supply units are arranged to supply to corresponding input units voltages for setting the corresponding input units to have first and second potentials are disposed two-dimensionally, and a plurality of voltage supply control units are arranged to supply a voltage to corresponding voltage supply units of the plurality of voltage supply units. | 02-26-2009 |
20090104729 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 04-23-2009 |
20090109312 | IMAGE SENSING APPARATUS, IMAGING SYSTEM, AND IMAGE SENSING APPARATUS DRIVING METHOD - An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period. | 04-30-2009 |
20090109314 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 04-30-2009 |
20090122172 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region. | 05-14-2009 |
20090166516 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGE SENSING SYSTEM - A photoelectric conversion device manufacturing method comprises: a first implantation step of implanting impurity ions of a first conductivity type into an underlying substrate via a region of the oxide film exposed by an opening, thereby forming a first semiconductor region having a first thickness in the element region; an the oxidation step of oxidizing the region of the oxide film exposed by the opening, thereby thickening the exposed region; an the exposure step of exposing a region of the oxide film which is not exposed by the opening; a the second implantation step of, after the exposure step, implanting the impurity ions of the first conductivity type into the underlying substrate via a region unthickened in the oxidation step, thereby forming a second semiconductor region having a second thickness larger than the first thickness in the element isolation region; and an the element formation step. | 07-02-2009 |
20090167914 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a pixel array; a readout unit; a first terminal; and a second terminal, wherein the readout unit including a column amplification unit, a holding unit, a first power supply line, and a second power supply line, and wherein the column amplification unit including a transistor having a gate electrode and back-gate electrode, the gate electrode receiving a signal read out from a pixel on each column of the pixel array, and the holding unit including a capacitor having a first electrode and a second electrode, the first electrode receiving a signal amplified by the column amplification unit, and wherein the first power supply line transfers the first power supply voltage to the back-gate electrode of the transistor, and the second power supply line transfers the second power supply voltage to the second electrode of the capacitor. | 07-02-2009 |
20090200449 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - A photoelectric conversion device comprises: a clipping unit including a MOS transistor which has a source connected to a signal line and a drain being connected to a power supply, and the clipping unit clipping an electric potential of the signal line to an electric potential corresponding to an electric potential of the source; a holding capacitance which has a first electrode and a second electrode, the first electrode being connected to a gate of the MOS transistor, and the holding capacitance holding at least a voltage transferred to the signal line while the charge-voltage converter has been reset; and a shift unit which shifts an electric potential of the second electrode in a direction such that the electric potential of the second electrode comes close to a level to be transferred to the signal line while the charge-voltage converter has been reset. | 08-13-2009 |
20090219424 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprising on a single semiconductor substrate: a pixel array; a vertical scanning unit; a horizontal scanning unit; a counter which starts a counting operation to count the number of the clocks before a start of the first period, and stops the counting operation before a start of the second period during the first period; and a generation unit which generates a first control signal for causing the vertical scanning unit to drive a pixel, the generation unit including a signal generation unit which generates a second control signal in accordance with the counted value output from the counter, and a delay unit which delays the second control signal to generate the first control signal and output the first control signal to the vertical scanning unit. | 09-03-2009 |
20090244340 | IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage. | 10-01-2009 |
20090303340 | IMAGE SENSING DEVICE AND IMAGE SENSING SYSTEM - An image sensing device comprises: a pixel array that is arrayed such that pixels that output signals to column signal lines constitute a plurality of rows and a plurality of columns, and in which the plurality of pixels are connected to each of the plurality of column signal lines; a plurality of readout units that read out signals from the pixel array via the plurality of column signal lines, each of the plurality of readout units including an input transistor that receives a signal that has been read out via the column signal line; and a first load transistor that supplies an electric current to the input transistor, and a plurality of first bias supply units that supply mutually different bias voltages to gates of the first load transistors at least in readout units of the plurality of readout units and arranged adjacent to each other. | 12-10-2009 |
20100221864 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 09-02-2010 |
20110003426 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 01-06-2011 |
20110013042 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - Each pixel includes a photo-electric converter, transfer switch, charge-voltage conversion node, amplifier, and control switch. A solid-state image sensor includes a voltage controller which controls the voltage of the charge-voltage conversion node of each pixel via the control switch of the pixel. A voltage set at the charge-voltage conversion node by the voltage controller via the control switch includes a first voltage (VD | 01-20-2011 |
20110157441 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - An solid state image pickup device including a plurality of photoelectric conversion regions (PD | 06-30-2011 |
20110157447 | PHOTOELECTRIC CONVERSION DEVICE METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE AND IMAGE PICKUP SYSTEM - A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor. | 06-30-2011 |
20110199524 | IMAGE SENSING APPARATUS, IMAGING SYSTEM, AND IMAGING SENSING APPARATUS DRIVING METHOD - An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period. | 08-18-2011 |
20120081586 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a pixel array; a readout unit; a first terminal; and a second terminal, wherein the readout unit including a column amplification unit, a holding unit, a first power supply line, and a second power supply line, and wherein the column amplification unit including a transistor having a gate electrode and back-gate electrode, the gate electrode receiving a signal read out from a pixel on each column of the pixel array, and the holding unit including a capacitor having a first electrode and a second electrode, the first electrode receiving a signal amplified by the column amplification unit, and wherein the first power supply line transfers the first power supply voltage to the back-gate electrode of the transistor, and the second power supply line transfers the second power supply voltage to the second electrode of the capacitor. | 04-05-2012 |
20120086841 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING DEVICE - A photoelectric conversion device includes a pixel unit including a photoelectric converter, an amplifier arranged on the output side of the pixel unit, an output unit arranged on the output side of the amplifier, a first restriction circuit, and a second restriction circuit. The first restriction circuit restricts, between the amplifier and the output unit, a noise level read out from the pixel unit via the amplifier in reading out the noise level from the pixel unit. The second restriction circuit restricts, between the photoelectric converter and the amplifier, a noise level to be provided to the amplifier in reading out the noise level from the pixel unit. | 04-12-2012 |
20120168610 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes: a pixel region including a plurality of pixels, each including a photoelectric conversion element, arranged in matrix, and a reset switch for discharging electric charge of the photoelectric conversion element; and a first scanning circuit for supplying a reset control signal for controlling an operation of the reset switch, the pixel region and the first scanning circuit being formed on a semiconductor substrate, in which the pixel region includes a first pixel region and a second pixel region, and the first scanning circuit includes a first decoder for controlling the operation of the reset switch arranged in the first pixel region, and a second decoder for controlling the operation of the reset switch arranged in the second pixel region. | 07-05-2012 |
20120194724 | IMAGE PICKUP DEVICE AND IMAGE PICKUP SYSTEM - There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage. | 08-02-2012 |
20120217603 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 08-30-2012 |
20120288979 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 11-15-2012 |
20130002916 | IMAGE SENSING DEVICE AND IMAGE SENSING SYSTEM - An image sensing device comprises: a pixel array that is arrayed such that pixels that output signals to column signal lines constitute a plurality of rows and a plurality of columns, and in which the plurality of pixels are connected to each of the plurality of column signal lines; a plurality of readout units that read out signals from the pixel array via the plurality of column signal lines, each of the plurality of readout units including an input transistor that receives a signal that has been read out via the column signal line; and a first load transistor that supplies an electric current to the input transistor, and a plurality of first bias supply units that supply mutually different bias voltages to gates of the first load transistors at least in readout units of the plurality of readout units and arranged adjacent to each other. | 01-03-2013 |
20130140438 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130140665 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130222659 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA HAVING ARRAYED PIXELS INCLUDING AMPLIFYING UNITS - An solid state image pickup device including a plurality of photoelectric conversion regions (PD | 08-29-2013 |
20140054663 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 02-27-2014 |