| Patent application number | Description | Published |
|---|
| 20090135109 | ORGANIC EL ELEMENT, ORGANIC EL DISPLAY DEVICE, AND METHODS OF MANUFACTURING THE SAME - In an organic EL element having a transparent conductive electrode and a cathode opposed to the transparent conductive electrode, the cathode includes a film of a rare earth element that can be sputtered. The film of the rare earth element having a low work function, for example, a LaB | 05-28-2009 |
| 20090286405 | SHOWER PLATE, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE - Provided is a shower plate in which there's no need for a cover plate. The shower plate | 11-19-2009 |
| 20090311869 | SHOWER PLATE AND MANUFACTURING METHOD THEREOF, AND PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SHOWER PLATE - Provided is a shower plate capable of more securely preventing the occurrence of backflow of plasma and enabling efficient plasma excitation. A shower plate | 12-17-2009 |
| 20100025821 | ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD - When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode. | 02-04-2010 |
| 20100059368 | MAGNETRON SPUTTERING APPARATUS - Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet. | 03-11-2010 |
| 20100101945 | MAGNETRON SPUTTERING APPARATUS - In a magnetron sputtering apparatus configured such that a magnetic field pattern on a target surface moves with time by means of a rotary magnet group, an object of this invention is to solve a problem that the failure rate of substrates to be processed becomes high upon plasma ignition or extinction, thereby providing a magnetron sputtering apparatus in which the failure rate of the substrates is smaller than conventional. | 04-29-2010 |
| 20100126848 | MAGNETRON SPUTTERING APPARATUS - A magnetron sputtering apparatus is provided whereby film formation speed can be improved by increasing instantaneous erosion density on a target, and the target life can be prolonged by moving an erosion region over time to prevent local wear of the target, and realize uniform wear. Multiple plate-like magnets are installed around a columnar rotating shaft, and the columnar rotating shaft is rotated, thereby forming a high-density erosion region on a target to increase film formation speed, and the erosion region is moved along with rotation of the columnar rotating shaft, thereby wearing the target uniformly. | 05-27-2010 |
| 20100126852 | ROTARY MAGNET SPUTTERING APPARATUS - In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target. | 05-27-2010 |
| 20100230387 | Shower Plate, Method for Manufacturing the Shower Plate, Plasma Processing Apparatus using the Shower Plate, Plasma Processing Method and Electronic Device Manufacturing Method - Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate | 09-16-2010 |
| 20100231118 | CATHODE BODY AND FLUORESCENT TUBE USING THE SAME - An object of the present invention is to provide a cathode body having a high intensity, a high efficiency, and a long life. The cathode body of the present invention is manufactured by forming, on a cylindrical cup formed of a metal alloy containing lanthanum oxide and having a high thermal conductivity, a LaB | 09-16-2010 |
| 20100288439 | TOP PLATE AND PLASMA PROCESS APPARATUS EMPLOYING THE SAME - A disclosed top plate that is configured as a solid part and provided in an opening in a ceiling portion of a plasma process chamber whose inside is evacuatable to vacuum includes plural gas conduits formed in a horizontal direction of the top plate; and gas ejection holes that are open in a first surface of the top plate, the first surface facing the inside of the plasma process chamber and in gaseous communication with the plural gas conduits. | 11-18-2010 |
| 20110000533 | PHOTOELECTRIC CONVERSION ELEMENT STRUCTURE AND SOLAR CELL - It is possible to reduce the contact resistance so as to improve the conversion efficiency of a photoelectric conversion element structure. Provided is a photoelectric conversion element structure of the pin structure which selects an upper limit energy level of the valence band of the p-type semiconductor or the electron affinity of the n-type semiconductor layer and the work function of a metal layer which is brought into contact with the semiconductor, so as to reduce the contact resistance as compared to the case when Al or Ag is used as an electrode. The selected metal layer may be arranged between the electrode formed from Al or Ag and the semiconductor or may be substituted for the n- or p-type semiconductor. | 01-06-2011 |
| 20110000783 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus which includes a plasma shielding member and an outer wall connected to the ground and which has a series resonant circuit and a parallel resonant circuit between the plasma shielding member and the outer wall. The series resonant circuit has a very low impedance only at its resonant frequency while the parallel resonant circuit has a very high impedance only at its resonant frequency. With this configuration, the impedance between substrate RF power and the plasma shielding member becomes very high so that it is possible to suppress the generation of plasma between a substrate | 01-06-2011 |
| 20110114375 | WIRING BOARD AND METHOD OF MANUFACTURING THE SAME - Adhesiveness between a wiring layer and a resin layer is improved by forming a nitrided resin layer by nitriding a surface of a substrate by plasma, and furthermore, thinly forming a copper nitride film prior to forming a copper film. | 05-19-2011 |
