Tetsuo Adachi
Tetsuo Adachi, Hachioji-Shi JP
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20080219082 | NONVOLATILE SEMICONDUCTOR MEMORY - Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte. | 09-11-2008 |
20110051515 | NONVOLATILE SEMICONDUCTOR MEMORY - Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte. | 03-03-2011 |
20120218819 | NONVOLATILE SEMICONDUCTOR MEMORY - Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte. | 08-30-2012 |
Tetsuo Adachi, Hitachinaka JP
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20080233728 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME - Provided is a manufacturing method of a semiconductor device which has the following steps of forming a plurality of layered patterns obtained by stacking an insulating film, a conductor film for forming a floating gate electrode and another insulating film over a semiconductor substrate in the order of mention, forming sidewalls over the side surfaces of the plurality of layered patterns, removing a damage layer of the semiconductor substrate between any two adjacent layered patterns by dry etching, forming an insulating film over the semiconductor substrate between two adjacent layered patterns, and forming a plurality of assist gate electrodes over the insulating film between two adjacent layered patterns in self alignment therewith. According to the present invention, a semiconductor device having a flash memory has improved reliability. | 09-25-2008 |
20090273038 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A technique is provided which permits formation within a single chip both a field effect transistor of high reliability capable of suppressing the occurrence of a crystal defect and a field effect transistor of a high integration degree. In a mask ROM section having an element isolation region with an isolation width of smaller than 0.3 μm, a planar shape of each active region ACT is made polygonal by cutting off the corners of a quadrangle, thereby suppressing the occurrence of a crystal defect in the active region ACT and diminishing a leakage current flowing between the source and drain of a field effect transistor. In a sense amplifier data latch section which is required to have a layout of a small margin in the alignment between a gate G of a field effect transistor and the active region ACT, the field effect transistor is disposed at a narrow pitch by making the active region ACT quadrangular. | 11-05-2009 |
Tetsuo Adachi, Ome JP
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20090230453 | NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD OF MAKING SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MAKING DEVICE - A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved. | 09-17-2009 |
Tetsuo Adachi, General Santos City PH
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20110229614 | METHOD OF TREATING FISH MEAT - It is intended to provide a method of treating fish meat whereby the amount of so-called drip flowing out from fish meat, which is obtained by disassembling, cutting and forming landed fish and then freezing, in the course of the treatment and thawing can be largely reduced. This object is achieved by pre-drying molded fish meat, which has been prepared by disassembling landed fish and cutting them into various shapes, with a cold air so as to lightly dehydrate the surface part, dipping the fish meat in an aqueous solution of sodium chloride for a short period of time so that the fish meat surface turns into a gel to form a coating, vacuum-packaging it as such, further blowing a clean gas such as oxygen into the package to give a gas-containing package, then freezing it by the brine freezing method and storing in that state. Due to a series of the treating procedures as described above, the amount of the drip during thawing the fish meat is considerably reduced. | 09-22-2011 |
Tetsuo Adachi, Kawasaki-Shi JP
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20150115269 | Semiconductor Device and Method for Manufacturing Semiconductor Device - This invention provides a semiconductor device with improved reliability. A semiconductor chip (semiconductor device) includes a plurality of electrode pads arranged in a plurality of lines extending along a side (chip side) of a perimeter of the semiconductor chip in plan view. Among the electrode pads, the areas of respective electrode pads arranged in a first line along the chip side are smaller than the areas of respective electrode pads arranged in a line located further than the first line from the chip side. | 04-30-2015 |