| Patent application number | Description | Published |
|---|
| 20090261325 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface. | 10-22-2009 |
| 20100140614 | OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND ACTIVE MATRIX SUBSTRATE - A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved. | 06-10-2010 |
| 20100210070 | METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR HAVING AN OXIDE SEMICONDUCTOR - A method of manufacturing a field effect transistor, which has high alignment accuracy between a gate electrode and source and drain electrodes and can provide a transparent device at a low cost. Since a patterned light blocking film is formed on the rear side of a substrate and used as a photomask for forming a gate electrode pattern and a source and drain electrode pattern on the front side of the substrate, the number of photomasks is reduced, and self-alignment between the gate electrode and the source and drain electrodes is carried out, thereby improving the alignment accuracy of these electrodes. Thereby, a method of manufacturing a high-accuracy low-cost field effect transistor can be provided. | 08-19-2010 |
| 20100330738 | Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same - An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 Ωcm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less. | 12-30-2010 |
| 20110042667 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a thin film transistor (TFT) through a process including back exposure, in which oxide semiconductor is used for a channel layer; using an electrode over a substrate as a mask, negative resist is exposed to light from the back of the substrate; the negative resist except its exposed part is removed; and an electrode is shaped by etching a conductive film using the exposed part as an etching mask. | 02-24-2011 |
| 20110049508 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - In a manufacturing method for thin film transistors, the following procedure is taken: a sacrifice layer comprised of a metal oxide semiconductor is formed over a conductive layer comprised of a metal oxide semiconductor; a metal film is formed over the sacrifice layer; the metal film is processed by dry etching; and the portion of the sacrifice layer exposed by this dry etching is subjected to wet etching. | 03-03-2011 |
