Patent application number | Description | Published |
20080247433 | NITRIDE SEMICONDUCTOR LASERS AND ITS MANUFACTURING METHOD - A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current. | 10-09-2008 |
20090016397 | Nitride semiconductor light emitting device and method for manufacturing the same - A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from | 01-15-2009 |
20090206360 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor. | 08-20-2009 |
20090207872 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-type ohmic electrode with an Au face excellent in ohmic contacts and in mounting properties, and a method of manufacturing the same. The device uses an n-type ohmic electrode having a laminate structure that is composed of: a first layer containing Al as a main ingredient and having a thickness not greater than 10 nm or not less than 3 nm; a second layer containing one or more metals selected from Mo and Nb, so as to suppress the upward diffusion of Al; a third layer containing one or more metals selected from Ti and Pt, to suppress the downward diffusion of Al; and a fourth layer being made of Au, from the side in contact with an n-type nitride substrate in order of mention, and after the laminate structure is formed, the n-type ohmic electrode is annealed. | 08-20-2009 |
20100150194 | NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD THEREOF - In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia. | 06-17-2010 |
20120223337 | NITRIDE SEMICONDUCTOR DIODE - In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly. | 09-06-2012 |
20120228626 | SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD - In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced. | 09-13-2012 |
20120228664 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention provides a nitride semiconductor light emitting device having an n-electrode that has an Au face excellent in ohmic contacts to an n-type nitride semiconductor and excellent in mounting properties, and a method of manufacturing the same. The nitride semiconductor light emitting device uses an n-electrode having a three-layer laminate structure that is composed of a first layer containing aluminum nitride and having a thickness not less than 1 nm or less than 5 nm, a second layer containing one or more metals selected from Ti, Zr, Hf, Mo, and Pt, and a third layer made of Au, from the near side of the n-type nitride semiconductor in order of mention. The n-electrode thus formed is then annealed to obtain ohmic contacts to the n-type nitride semiconductor. | 09-13-2012 |
20130134443 | NITRIDE SEMICONDUCTOR DIODE - Disclosed is a high performance nitride semiconductor having a reverse leak current characteristic with two-dimensional electron gas as a conductive layer. A desired impurity is diffused into or a nitride semiconductor to which a desired impurity is added is re-grown on the bottom surface and the side face portion of a recessed portion formed by dry etching using chlorine gas on the upper surface of a nitride semiconductor stacked film to increase resistance of the side face portion of the nitride semiconductor stacked film contacting an anode electrode, reducing the reverse leak current. | 05-30-2013 |
Patent application number | Description | Published |
20080253171 | SEMICONDUCTOR INTEGRATED CIRCUIT - A semiconductor integrated circuit includes: a memory cell array including a plurality of SRAM memory cells; a characteristic measuring circuit including a plurality of transistor circuits connected in parallel; and a first terminal. The plurality of transistor circuits each include a first transistor configured in the same manner as one of transistors included in one of the SRAM memory cells. The first transistor is connected so as to control current between the first terminal and a node at a reference potential according to a voltage supplied to a gate of the first transistor. | 10-16-2008 |
20110007575 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit. | 01-13-2011 |
20110103126 | SEMICONDUCTOR MEMORY DEVICE - A control circuit supplies a word line drive voltage to one of m word lines which corresponds to a memory cell to which data is to be written, during a word line drive period including a first period and a second period following the first period, to decrease current capabilities of first and second load transistors included in the memory cell during the first period, and increase the current capabilities of the first and second load transistors during the second period. | 05-05-2011 |
20110188327 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a plurality of memory cells each including a holding circuit for holding memory data, and a read-only output circuit for outputting a signal corresponding to the data held by the holding circuit. The read-only output circuit has a read drive transistor controlled in accordance with a signal held by the holding circuit. A gate length of the read drive transistor is longer than a gate length of a transistor included in the holding circuit. Alternatively, the read-only output circuit has a read access transistor controlled in accordance with a read word select signal, and a gate length of the read access transistor is longer than a gate length of a transistor included in the holding circuit. | 08-04-2011 |
20120155211 | SEMICONDUCTOR INTEGRATED CIRCUIT - A memory macro includes: a plurality of memory cells arranged in a matrix; a plurality of word lines corresponding to rows of the plurality of memory cells; and a plurality of word line drivers configured to drive the plurality of word lines. The voltage of the word lines in their activated state is set to vary with threshold voltage characteristics of a p-channel transistor and an n-channel transistor. | 06-21-2012 |