Patent application number | Description | Published |
20110183525 | Homogeneous Porous Low Dielectric Constant Materials - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material. | 07-28-2011 |
20120282784 | HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material. | 11-08-2012 |
20120329273 | HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature. | 12-27-2012 |
20130017688 | Reduction Of Pore Fill Material DewettingAANM Dubois; Geraud Jean-MichelAACI San JoseAAST CAAACO USAAGP Dubois; Geraud Jean-Michel San Jose CA USAANM Frot; Theo J.AACI Los GatosAAST CAAACO USAAGP Frot; Theo J. Los Gatos CA USAANM Magbitang; Teddie P.AACI San JoseAAST CAAACO USAAGP Magbitang; Teddie P. San Jose CA USAANM Volksen; WilliAACI San JoseAAST CAAACO USAAGP Volksen; Willi San Jose CA US - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material includes a polymer and at least one additive, where the at least one additive includes at least one of a surfactant, a high molecular weight polymer and a solvent; and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer. | 01-17-2013 |
20130045608 | REDUCTION OF PORE FILL MATERIAL DEWETTING - In one embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, includes operations comprising: providing a structure comprising a first layer overlying a substrate, where the first layer comprises a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material comprises a polymer and at least one additive, where the at least one additive comprises at least one of a surfactant, a high molecular weight polymer and a solvent (e.g., a high boiling point solvent); and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer. | 02-21-2013 |
20130056874 | Protection of intermetal dielectric layers in multilevel wiring structures - A semiconductor device is accepted at a stage of its fabrication, at which stage the device includes a diffusion-barrier cap-material (DBCM) layer and an intermetal dielectric layer covering the DBCM layer. The DBCM layer is exposed and it is suitable for removal by an etching procedure in a portion of a pattern contained in the intermetal dielectric layer. A silylation treatment is performed on the semiconductor device prior to the etching procedure for removing the DBCM layer. The intermetal dielectric layer of the completed device has surfaces in contact with metal interconnects and metal vias, and it may have an excess of carbon content near at least a portion of the these surfaces. | 03-07-2013 |
20140367356 | IN-SITU HARDMASK GENERATION - In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underlying ILD. | 12-18-2014 |
20150311066 | SURFACE PLASMA MODIFICATION OF POROUS THIN-FILMS TO OPTIMIZE PORE FILLING - The present invention describes a process to modify a top portion of a porous ultra low-k (ULK) material in order to maximize porosity filling with a filling material that initially displayed low compatibility with the ULK material. Surface modification is achieved by a plasma treatment, enhancing the compatibility between the ULK surface and the filling material. The invention obtains high filling levels with minimum modification to the ULK material, as only a thin top portion is modified without significant pore sealing. | 10-29-2015 |