Te-Ho
Te-Ho Chen, Kaohsiung City TW
Patent application number | Description | Published |
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20090078588 | ELECTROCHEMICAL QUANTITATIVE ANALYSIS SYSTEM AND METHOD FOR THE SAME - A system for electrochemical quantitative analysis is provided. The system includes a measuring apparatus having a plurality of analysis modes. Each of the analysis modes is for quantitatively analyzing different biochemical substance. The system further includes a plurality of test strips. Each of the test strips has a different identification component for a different analysis mode. When one of the plurality of test strips is selected to electronically connect to the measuring apparatus, the measuring apparatus executes one of the plurality of analysis modes according to the identification component of the selected test strip to quantitatively analyze a corresponding biochemical substance. | 03-26-2009 |
Te-Ho Wu, Yunlin TW
Patent application number | Description | Published |
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20090046497 | System and method for reducing critical current or magnetic random access memory - A system and a method for reducing critical current of magnetic random access memory (MRAM) are disclosed. The magnetic device includes at least a pinned layer, a spacer layer and a free layer, and the material of the pinned layer and the free layer is perpendicularly anisotropic ferrimagnetic. The spacer layer is an insulator. By the modified Landau-Lifshitz-Gilbert equations, the varying trend of the critical current can be estimated. | 02-19-2009 |
20100266873 | MAGNETIC STACK STRUCTURE AND MANUFACTURING METHOD THEREOF - A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively. | 10-21-2010 |
Te-Ho Wu, Douliou City TW
Patent application number | Description | Published |
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20080205123 | MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF REDUCING CRITICAL CURRENT OF THE SAME - A magnetic random access memory includes a substrate, a free layer and a spacer layer. The substrate and the free layer are made of a vertical anisotropy ferrimagentic thin film. The spacer layer is sandwiched between the substrate and the free layer and is made of an insulating layer. The method uses a modified Landau-Lifshitz-Gilbert equation to obtain a critical current value as a function of exchange coupling constant. The critical current value is predictable under several external magnetic fields being applied. When the exchange coupling constant is proportionally varied, the critical current value is reduced to a third of its original value under an optimum state. | 08-28-2008 |