Patent application number | Description | Published |
20100045912 | DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - A driving circuit and a common electrode are located within a sealant region of the first substrate, wherein the driving circuit includes switch devices and turn-line structures. The common electrode is located within the sealant region of the first substrate. The planar layer is located on the first substrate, wherein the thickness of the planar layer at the turn-line structure of the driving circuit is less than the thicknesses of other portions. The conductive layer is located on the planar layer. A second substrate having an electrode thereon is disposed opposite to the first substrate. A liquid crystal layer is located within the display region between the first substrate and the second substrate. A sealant is located within the sealant region between the first substrate and the second substrate, and conductive balls are distributed in the sealant. | 02-25-2010 |
20100149473 | PIXEL ARRAY AND MANUFACTURING METHOD THEREOF - A pixel array includes a substrate, scan lines, data lines, active devices, first pads, second pads, first wires, second wires, an insulating layer, an organic planarization layer, first pad electrodes, second pad electrodes and pixel electrodes. The substrate has a display area and a non-display area. The scan lines and the data lines are disposed in the display area. The active devices are disposed in the display area and electrically connected to the scan lines and the data lines. The first and second pads are disposed in the non-display area. The first and second wires are disposed in the non-display area and respectively connected to the first and second pads. The organic planarization layer covers the insulating layer. The first and second pad electrodes are disposed on the organic planarization layer in the non-display area. The pixel electrodes are disposed on the organic planarization layer in the display area. | 06-17-2010 |
20120092578 | DISPLAY PANEL - A driving circuit and a common electrode are located within a sealant region of the first substrate, wherein the driving circuit includes switch devices and turn-line structures. The common electrode is located within the sealant region of the first substrate. The planar layer is located on the first substrate, wherein the thickness of the planar layer at the turn-line structure of the driving circuit is less than the thicknesses of other portions. The conductive layer is located on the planar layer. A second substrate having an electrode thereon is disposed opposite to the first substrate. A liquid crystal layer is located within the display region between the first substrate and the second substrate. A sealant is located within the sealant region between the first substrate and the second substrate, and conductive balls are distributed in the sealant. | 04-19-2012 |
Patent application number | Description | Published |
20130161604 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain. | 06-27-2013 |
20150138465 | DISPLAY PANEL - A display panel, which has a display region and a non-display region, includes an active array substrate and an opposite substrate disposed opposite to the active array substrate. The active array substrate includes a substrate, a pixel array, and a driving circuit. The pixel array and the driving circuit are disposed on the substrate, wherein the pixel array is located in the display region and the driving circuit is located in the non-display region. The driving circuit includes a first transparent electrode layer, a second transparent electrode layer, and a dielectric layer. The dielectric layer is located between the first transparent electrode layer and the second transparent electrode layer, wherein the first transparent electrode layer and the second transparent electrode layer are electrically coupled to each other to form at least one transparent capacitor. | 05-21-2015 |
Patent application number | Description | Published |
20080272358 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a bottom electrode formed over a substrate. A first dielectric layer is formed over the bottom electrode. A heating electrode is formed in the first dielectric layer and partially protrudes over the first dielectric layer, wherein the heating electrode includes an intrinsic portion embedded within the first dielectric layer, a reduced portion stacked over the intrinsic portion, and an oxide spacer surrounding a sidewall of the reduced portion. A phase change material layer is formed over the first dielectric layer and covers the heating electrode, the phase change material layer contacts a top surface of the reduced portion of the heating electrode. A top electrode is formed over the phase change material layer and contacts the phase change material layer. | 11-06-2008 |
20080290335 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A phase change memory device comprising a substrate. A plurality of bottom electrodes isolated from each other is on the substrate. An insulating layer crosses a portion of the surfaces of any two of the adjacent bottom electrodes. A pair of phase change material spacers is on a pair of sidewalls of the insulating layer, wherein the pair of the phase change material spacers is on any two of the adjacent bottom electrodes, respectively. A top electrode is on the insulating layer and covers the phase change material spacers. | 11-27-2008 |
20090008621 | PHASE-CHANGE MEMORY ELEMENT - A phase-change memory element is provided. The phase-change memory element of an embodiment of the invention comprises a phase-change material layer with a concave, and a heater with an extended part, wherein the extended part of the heater is wedged in the concave of the phase-change material layer. Specifically, the extended part of the heater has a length of 10˜5000 Å. | 01-08-2009 |
20110053333 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a bottom electrode formed over a substrate. A first dielectric layer is formed over the bottom electrode. A heating electrode is formed in the first dielectric layer and partially protrudes over the first dielectric layer, wherein the heating electrode includes an intrinsic portion embedded within the first dielectric layer, a reduced portion stacked over the intrinsic portion, and an oxide spacer surrounding a sidewall of the reduced portion. A phase change material layer is formed over the first dielectric layer and covers the heating electrode, the phase change material layer contacts a top surface of the reduced portion of the heating electrode. A top electrode is formed over the phase change material layer and contacts the phase change material layer. | 03-03-2011 |