Patent application number | Description | Published |
20100319188 | MANUFACTURING METHOD OF POWER STORAGE DEVICE - A safe method of manufacturing an electrode of a power storage device even when an alkali metal is used in forming the electrode. A negative electrode is manufactured by forming an alkali metal ion insertion/extraction layer which is a layer capable of alkali metal ion insertion and extraction on a surface of a current collector, forming an alkali metal film under reduced pressure on a surface of the alkali metal ion insertion/extraction layer, ionizing the alkali metal film, and impregnating the alkali metal ion insertion/extraction layer with the ionized alkali metal. | 12-23-2010 |
20110012112 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property. | 01-20-2011 |
20110031492 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material. | 02-10-2011 |
20110076566 | NEGATIVE ELECTRODE ACTIVE MATERIAL, NEGATIVE ELECTRODE, AND POWER STORAGE DEVICE - An object is to improve characteristics of a power storage device and achieve a long lifetime. In the case where a lithium nitride is used for a negative electrode active material of a power storage device, a plurality of lithium nitride layers with different lithium concentrations are stacked. For example, in the case where a first lithium nitride layer and a second lithium nitride layer are stacked over a current collector, lithium is contained in the first lithium nitride layer at a lower concentration than lithium contained in the second lithium nitride layer. In this case, a concentration of a transition metal of the first lithium nitride layer is higher than a concentration of the transition metal of the second lithium nitride layer. Note that another alkali metal may be used instead of lithium. | 03-31-2011 |
20110177396 | ELECTRICITY STORAGE DEVICE - An object is to improve characteristics of a power storage device. The present invention relates to an electricity storage device comprising a current collector and a negative electrode-active material layer formed over the current collector. The negative electrode-active material layer includes a negative electrode comprising a first negative electrode layer in contact with the current collector; a second negative electrode layer in contact with the first negative electrode layer, having a smaller capacitance than the first negative electrode layer and containing one material selected from a nitride of lithium and a transition metal represented by Li | 07-21-2011 |
20120300151 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property. | 11-29-2012 |
20140091303 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material. | 04-03-2014 |
20140293183 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property. | 10-02-2014 |