Patent application number | Description | Published |
20110158886 | POLYSILANE PRODUCTION PROCESS - A polysilane production process comprising reacting a specific silane compound typified by a cyclic silane compound represented by the following formula (2) in the presence of a binuclear metal complex represented by the following formula (4). | 06-30-2011 |
20110184141 | POLYMER PRODUCTION PROCESS - A polymer production process comprising reacting a compound represented by the following formula (1) in the presence of a binuclear metal complex represented by the following formula (2). | 07-28-2011 |
20110318939 | HIGH ORDER SILANE COMPOSITION AND METHOD OF MANUFACTURING A FILM-COATED SUBSTRATE - A composition comprising a high order silane compound and a solvent, wherein the solvent contains a cyclic hydrocarbon which has one or two double bonds and no alkyl group, is composed of only carbon and hydrogen and has a refractive index of 1.40 to 1.51, a specific permittivity of not more than 3.0 and a molecular weight of not more than 180. | 12-29-2011 |
20120064302 | PATTERNING METHOD - A patterning method comprising the steps of: | 03-15-2012 |
20130224889 | CHARGED PARTICLE BEAM APPARATUS, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FORMING METHOD - A charged particle beam apparatus is provided that enables faster semiconductor film deposition than the conventional deposition that uses silicon hydrides and halides as source gases. The charged particle beam apparatus includes a charged particle source | 08-29-2013 |
20140103341 | METHOD FOR PRODUCING AMORPHOUS OXIDE THIN FILM AND THIN FILM TRANSISTOR - A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cm | 04-17-2014 |
20140319660 | SOLID-STATE ELECTRONIC DEVICE - A solid-state electronic device according to the present invention includes: an oxide layer (possibly containing inevitable impurities) that is formed by heating, in an atmosphere containing oxygen, a precursor layer obtained from a precursor solution as a start material including both a precursor containing bismuth (Bi) and a precursor containing niobium (Nb) as solutes, the oxide layer consisting of the bismuth (Bi) and the niobium (Nb); wherein the oxide layer is formed by heating at a heating temperature from 520° C. to 650° C. | 10-30-2014 |
20150076487 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - A thin film transistor | 03-19-2015 |