Patent application number | Description | Published |
20100032839 | ELECTRODE STRUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Hb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-11-2010 |
20100151770 | SUBSTRATE POLISHING APPARATUS - A substrate polishing apparatus is provided for preventing excessive polishing and insufficient polishing, and enabling a quantitative setting of an additional polishing time. The substrate polishing apparatus comprises a mechanism for polishing a substrate to be polished; a film thickness measuring device for measuring the thickness of a thin film deposited on the substrate; an interface for entering a target thickness for the polished thin film; a storage area for preserving past polishing results; and a processing unit for calculating a polishing time and a polishing rate. The substrate polishing apparatus builds an additional polishing database for storing data acquired from the result of additional polishing in the storage area. | 06-17-2010 |
20100200863 | ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THOSE - A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11. | 08-12-2010 |
20110171568 | MASK BLANK SUBSTRATE - Provided is a mask blank substrate that can reduce the change in flatness of a main surface thereof before and after chucking to make very small the position offset caused by a photomask and that can significantly reduce the difference in tendency of substrate deformation before and after chucking between photomasks. In a mask blank substrate having two main surfaces and four end faces, a central point is set on the main surface, a first axis of symmetry that passes through the central point and that is parallel to one of the end faces and a second axis of symmetry that passes through the central point and that is perpendicular to the first axis of symmetry are respectively set, measurement points are set in the form of a grid with respect to the first axis of symmetry and the second axis of symmetry so as to measure heights of the main surface from a reference plane at the measurement points, respectively, differences each between measured height values at those measurement points located at positions that are axisymmetric with respect to the first axis of symmetry are calculated, and those differences corresponding to at least 95% of the total number of the calculated differences between the measured height values are within a predetermined value. | 07-14-2011 |
20110306274 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus has a polishing section ( | 12-15-2011 |
20120009078 | VANE COMPRESSOR - A vane compressor according to the present invention, including a cylinder which is approximately cylindrical and whose both ends located in an axial direction are open, a cylinder head and a frame which close both the ends of the cylinder, a rotor shaft which includes a rotor part being cylindrical and rotating in the cylinder and a shaft part transmitting torque to the rotor part, and a vane which is installed in the rotor part and whose tip portion has the R-shape facing outward, performs the compression operation in the state where the normal to the R-shape of the tip portion of the vane and the normal to the inner surface of the cylinder are always approximately coincident with each other. | 01-12-2012 |
20120028456 | ELECTRODE STUCTURE, SEMICONDUCTOR ELEMENT, AND METHODS OF MANUFACTURING THE SAME - According to the present invention, there is provided an electrode structure which includes: a nitride semiconductor layer; an electrode provided over the nitride semiconductor layer; and an electrode protective film provided over the electrode, wherein the nitride semiconductor layer contains a metal nitride containing Nb, Hf or Zr as a constitutive element, the electrode has a portion having a metal oxide containing Ti or V as a constitutive element formed therein, and the electrode protective film covers at least a portion of the electrode, and contains a protective layer having Au or Pt as a constitutive element. | 02-02-2012 |
20130064705 | VANE COMPRESSOR - There is provided a vane compressor with a plurality of vanes having a structure in which a rotor portion and a rotary shaft are unitarily formed so as to reduce bearing sliding loss of the rotary shaft and reduce gas leakage loss by narrowing a space formed between the rotor portion and the inner peripheral surface of a cylinder. In the vane compressor with the plurality of vanes according to the present invention, an angle α of a circular arc constituting the partial ring shape of each vane aligner satisfies a relationship of | 03-14-2013 |
20130084202 | VANE ROTARY COMPRESSOR - In a vane rotary compressor, a discharge valve on a discharge flow channel communicates an operating chamber in a compression element with a discharge hole. The discharge valve is pushed from an opening portion of a discharge valve groove to an outer circumferential surface of a roller by a high-pressure refrigerant when pressure in an operating chamber is lower than the pressure of the high-pressure refrigerant. The discharge valve is pushed back into the discharge valve groove by the refrigerant pressure in the operating chamber when the pressure in the operating chamber is higher than the pressure of the high-pressure refrigerant. The discharge flow channel is closed by the outer circumferential surface of the discharge valve pushed out from the opening portion of the discharge valve groove and the outer circumferential surface of the roller, and opens when the discharge valve is pushed back into the discharge valve groove. | 04-04-2013 |
20130149178 | VANE COMPRESSOR - A vane compressor including plural vanes that perform a compression operation such that the normal to a circular arc formed by each vane tip portion and the normal to the inner peripheral surface of a cylinder are constantly approximately coincident with each other. Each of the plural vanes is held constantly in the normal direction of the inner peripheral surface of the cylinder or is held constantly along a direction having a fixed inclination with respect to the normal direction of the inner peripheral surface of the cylinder so that the compression operation is performed in the state the normal to the circular arc formed by the tip portion of each of the plural vanes and the normal to the inner peripheral surface of the cylinder are constantly approximately coincident with each other. The plural vanes are rotatably and movably supported with respect to a rotor portion. | 06-13-2013 |
20130209925 | MASK BLANK, REFLECTIVE MASK BLANK, PHOTOMASK, REFLECTIVE MASK, PHOTOMASK SET AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In a mask blank substrate having two main surfaces and four end faces, a central point is set on the main surface, a first axis of symmetry that passes through the central point and that is parallel to one of the end faces and a second axis of symmetry that passes through the central point and that is perpendicular to the first axis are respectively set, measurement points are set in the form of a grid with respect to the first and the second axes so as to measure heights of the main surface from a reference plane at the measurement points, respectively, differences each between measured height values at those measurement points located at positions axisymmetric with respect to the first axis are calculated. Those differences corresponding to at least 95% of the total number of the calculated differences between the measured height values are within a predetermined value. | 08-15-2013 |
20140234755 | MASK BLANK SUBSTRATE, MASK BLANK, REFLECTIVE MASK BLANK, TRANSFER MASK, REFLECTIVE MASK, AND METHODS OF MANUFACTURING THE SAME - A mask blank substrate is provided with a substrate mark comprising an oblique section. The inclination angle of the substrate mark with respect to a main surface is greater than 45° and less than 90° and the distance from the boundary between the main surface and the substrate mark to the outer periphery of the mask blank substrate is less than 1.5 mm. | 08-21-2014 |