Patent application number | Description | Published |
20080284004 | SEMICONDUCTOR DEVICE, SUBSTRATE, EQUIPMENT BOARD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR CHIP FOR COMMUNICATION - A semiconductor device includes a first substrate having a first surface for mounting an electronic component and a second surface substantially parallel to the first surface. The first substrate includes a first region for mounting the electronic component, a second region including a plurality of first communication units for transmitting and receiving signals to and from a second substrate, input-output circuits disposed on the first region or the second region, the input-out circuits corresponding to the first communication units, and a control circuit for controlling input to and output from the input-output circuits disposed on the first region or the second region of the first substrate. Each of the input-output circuits includes an output circuit for outputting a signal to a second communication unit of the second substrate corresponding to the first communication unit and an input unit for receiving a signal sent from the corresponding second communication unit. | 11-20-2008 |
20080290508 | SEMICONDUCTOR DEVICE, SUBSTRATE, EQUIPMENT BOARD, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR CHIP FOR COMMUNICATION - A semiconductor device includes a first substrate having a first surface for mounting an electronic component and a second surface substantially parallel to the first surface. The first substrate includes a first region for mounting the electronic component, a second region including a plurality of first communication units for transmitting and receiving signals to and from a second substrate, input-output circuits disposed on the first region or the second region, the input-out circuits corresponding to the first communication units, and a control circuit for controlling input to and output from the input-output circuits disposed on the first region or the second region of the first substrate. Each of the input-output circuits includes an output circuit for outputting a signal to a second communication unit of the second substrate corresponding to the first communication unit and an input unit for receiving a signal sent from the corresponding second communication unit. | 11-27-2008 |
20090243685 | SIGNAL PROCESSING DEVICE - A signal processing device includes a correction circuit configured to correct the distortion of the duty cycle in a data signal having different occurrence probabilities of 0 and 1. | 10-01-2009 |
20090273418 | COMMUNICATION SYSTEM AND ANTENNA APPARATUS - An antenna apparatus for use in a transmitter or a receiver in a communication system. The antenna apparatus includes: a dielectric substrate having a conductor layer on one of surfaces; and a slot antenna including an antenna electrode formed on the one surface and disposed substantially at the center, a grounded conductive surface surrounding the antenna electrode, and a slot transmission line made by a gap between the antenna electrode and the grounded conductive surface. | 11-05-2009 |
20100316099 | INFORMATION PROCESSING APPARATUS AND MODE SWITCHING METHOD - Provided is an information processing apparatus which includes a first-module including a first narrow-band communicator for performing narrow band communication with a second-module, a first broadband-communicator for performing broadband communication with the second-module, and a first controller for controlling an operation state of the first broadband-communicator according to an operation mode, and a second-module including a second narrow-band communicator for performing narrow-band communication with the first-module, a second broadband-communicator for performing broadband communication with the first-module, and a second controller for controlling an operation state of the second broadband-communicator according to an operation mode. The first controller places the first broadband-communicator in an operation state in a first mode, and places the first broadband-communicator in a standby state in a second mode. The second controller places the second broadband-communicator in an operation state in the first mode, and places the second broadband-communicator in a standby state in the second mode. | 12-16-2010 |
20100329381 | SIGNAL PROCESSING APPARATUS, INFORMATION PROCESSING APPARATUS, MULTILEVEL CODING METHOD, AND DATA TRANSMISSION METHOD - Provided is a signal processing apparatus including an encoder for encoding, according to respective specific coding schemes, a first bit string formed from bit values at odd-numbered positions and a second bit string formed from bit values at even-numbered positions that are obtained by alternately extracting bit values from a bit string that is expressed by mutually different first and second bit values, and generating first and second encoded signals that do not include a DC component, and a signal generation unit for generating a multilevel signal by respectively adding, to a clock signal having larger amplitude than the first and second encoded signals that are generated by the encoder, the first encoded signal in synchronization with a timing of the clock signal being at a positive amplitude value and the second encoded signal in synchronization with a timing of the clock signal being at a negative amplitude value. | 12-30-2010 |
20120045015 | SIGNAL TRANSMISSION DEVICE, AND TRANSMISSION CONTROL METHOD - There is provided a signal transmission device including a first communication module including a first signal transmission unit for transmitting a first transmission signal having first amplitude to a second communication module through a predetermined transmission path, and the second communication module including a second signal transmission unit for transmitting a second transmission signal having second amplitude different from the first amplitude to the first communication module through the predetermined transmission path, and a transmission timing adjustment unit for adjusting a transmission timing of the second transmission signal by the second signal transmission unit so that a transition timing of the first transmission signal transmitted from the first communication module and a transition timing of the second transmission signal coincide with each other at a receiving end of the first communication module. | 02-23-2012 |
20120163242 | FULL DUPLEX TRANSMISSION CIRCUIT AND ELECTRONIC APPARATUS - Disclosed herein is a full duplex transmission circuit including: a first internal input terminal receiving a signal to be transmitted; a second internal input terminal receiving a signal having an amplitude equal to ½ times the amplitude of the signal to be transmitted and having the same phase as the phase of the signal to be transmitted; an external input/output terminal; an internal output terminal; a first metal oxide semiconductor transistor; and the second metal oxide semiconductor transistor. A current generated by the current source as well as the sizes of the first and second metal oxide semiconductor transistors are set so that the transconductances of the first and second metal oxide semiconductor transistors become equal to 1/Z. | 06-28-2012 |
20140231624 | SEMICONDUCTOR INTEGRATED CIRCUIT AND IMAGING DEVICE - There is provided a semiconductor integrated circuit including at least one MOS transistor a source or drain of which is connected an output terminal, and a driver circuit configured to drive a back gate or a well of the MOS transistor in a manner that voltage swing is in a same phase as the output terminal. | 08-21-2014 |
Patent application number | Description | Published |
20130195869 | ANTI-HUMAN CCR7 ANTIBODY, HYBRIDOMA, NUCLEIC ACID, VECTOR, CELL, PHARMACEUTICAL COMPOSITION, AND ANTIBODY-IMMOBILIZED CARRIER - An object of the present invention is to provide a novel anti-human CCR7 antibody useful as a therapeutic agent for tissue fibrosis or cancer, and a pharmaceutical composition containing the anti-human CCR7 antibody, and the like. An anti-human CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77 is provided. Also provided is an anti-human CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation. The anti-human CCR7 antibody of the present invention may be used as an active ingredient of a therapeutic agent for tissue fibrosis or cancer. | 08-01-2013 |
20150017167 | ANTI-HUMAN CCR7 ANTIBODY, HYBRIDOMA, NUCLEIC ACID, VECTOR, CELL, PHARMACEUTICAL COMPOSITION, AND ANTIBODY-IMMOBILIZED CARRIER - An object of the present invention is to provide a novel anti-human CCR7 antibody useful as a therapeutic agent for tissue fibrosis or cancer, and a pharmaceutical composition containing the anti-human CCR7 antibody, and the like. An anti-human CCR7 antibody specifically binding to an extracellular domain of human CCR7, having a heavy chain CDR3 containing an amino acid sequence represented by SEQ ID NO: 7, SEQ ID NO: 17, SEQ ID NO: 27, SEQ ID NO: 37, SEQ ID NO: 47, SEQ ID NO: 57, SEQ ID NO: 67, or SEQ ID NO: 77 is provided. Also provided is an anti-human CCR7 antibody having heavy chain CDRs 1-3 and light chain CDRs 1-3 containing amino acid sequences represented by SEQ ID NOs: 5-10, 15-20, 25-30, 35-40, 45-50, 55-60, 65-70, or 75-80. Preferably, the antibody has an activity of interfering with a CCR7-dependent intracellular signal transduction mechanism caused by CCR7 ligand stimulation. The anti-human CCR7 antibody of the present invention may be used as an active ingredient of a therapeutic agent for tissue fibrosis or cancer. | 01-15-2015 |
Patent application number | Description | Published |
20150034974 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: an n-type first SiC epitaxial layer; a p-type second SiC epitaxial layer on the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a combination of Al, Ga, or In and N, and/or a combination of B and P, the ratio of the concentration of the element D to the element A being higher than 0.33 but lower than 1.0; a surface region at the surface of the second SiC epitaxial layer containing the element A at a lower concentration than in the second SiC epitaxial layer, the ratio being higher than in the second SiC epitaxial layer; n-type first and second SiC regions; a gate insulating film; a gate electrode; a first electrode; and a second electrode. | 02-05-2015 |
20150060883 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a first insulating section, and a second insulating section. The first semiconductor region includes silicon carbide, is of a first conductivity type and includes first and second parts. The second semiconductor region includes silicon carbide, is of a second conductivity type and is provided on the second part. The third semiconductor region includes silicon carbide, is of the first conductivity type and is provided on the second semiconductor region. The first electrode is provided on the first part and the third semiconductor region. The first insulating section is provided on the third semiconductor region and juxtaposed with the first electrode. The second insulating section is provided between the first electrode and the first part and between the first electrode and the first insulating section. | 03-05-2015 |
20150060884 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, and a first electrode. The first semiconductor region is of a first conductivity type. The second semiconductor region is provided on the first semiconductor region, and is of a second conductivity type. The third semiconductor region is provided on the second semiconductor region, and is of the second conductivity type. The third semiconductor region contains a first impurity of the first conductivity type and a second impurity of the second conductivity type, and satisfies 103-05-2015 | |
20150084067 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device of this embodiment includes: a first region of a first conductivity type SiC; a second region of a first conductivity type SiC, impurity concentration of first conductivity type of the second region being lower than impurity concentration of first conductivity type of the first region; a third region of a second conductivity type SiC provided between the first region and the second region; a Si layer provided on surfaces of the first, second, and third regions, a thickness of-the Si layer on the third region being thicker than a thickness of the Si layer on the second region; a gate insulating film provided on the Si layer; and a date electrode provided on the gate insulating film. | 03-26-2015 |
20150084068 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device of an embodiment includes: an SiC layer; a gate insulating film provided on a surface of the SiC layer, the gate insulating film including an oxide film or an oxynitride film in contact with the surface of the SiC layer, the oxide film or the oxynitride film containing at least one element selected from B, Al, Ga (gallium), In, Sc, Y, La, Mg, Ca, Sr, and Ba, a concentration peak of the element in the gate insulating film being on the SiC side of the gate insulating film, the concentration peak of the element being in the oxide film or the oxynitride film, the gate insulating film having a region with a concentration of the element being not higher than 1×10 | 03-26-2015 |
20150087125 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device of an embodiment includes: preparing a substrate; and growing a p-type SiC single-crystal layer on the surface of the substrate from a liquid phase that contains Si (silicon), C (carbon), a p-type impurity, and an n-type impurity, the p-type impurity being an element A, the n-type impurity being an element D, the element A and the element D forming a first combination that is at least one combination selected from Al (aluminum) and N (nitrogen), Ga (gallium) and N (nitrogen), and In (indium) and N (nitrogen), and/or a second combination of B (boron) and P (phosphorus), the ratio of the concentration of the element D to the concentration of the element A in the first or second combination being higher than 0.33 but lower than 1.0. | 03-26-2015 |