Patent application number | Description | Published |
20120168867 | PROTECTION ELEMENT AND SEMICONDUCTOR DEVICE HAVING THE PROTECTION ELEMENT - Disclosed herein is a protection element for protecting a circuit element. The protection element includes source and drain areas created in a semiconductor layer, a gate created on the semiconductor layer, sandwiching a gate insulation film between the gate and the semiconductor layer, a source electrode connected to the surface of the source area and electrically connected to the ground, a drain electrode connected to the surface of the drain area and used for receiving a surge input, and a diode connected between the source electrode and the gate. | 07-05-2012 |
20120307406 | SEMICONDUCTOR INTEGRATED CIRCUIT - Disclosed herein is a semiconductor integrated circuit including in a same semiconductor substrate: first and second power supply lines; a protected circuit being connected between the first and second power supply lines and provided with a supply voltage; a detecting circuit detecting a surge generated in the first power supply line; an inverter circuit having one or more inverters connected in series to each other; and a protection transistor being connected between the first and second power supply lines and controlled by output of the detecting circuit to discharge the surge to the second power supply line. In the inverter circuit, an inverter whose output is connected to a control node of the protection transistor is connected between the first power supply line and a third power supply line that is different from the first and second power supply lines. | 12-06-2012 |
20140022677 | PROTECTION ELEMENT, SEMICONDUCTOR DEVICE, AND ELECTRONIC SYSTEM - A protection element includes a first wiring line configured to be supplied with a signal voltage when electric current is on; a second wiring line configured to be supplied with a criterion voltage; a detection circuit connected between the first wiring line and the second wiring line, and configured to detect the signal voltage inputted onto the first wiring line; an inverter circuit including a plurality of inverters connected between the first wiring line and the second wiring line, and configured to be supplied with a reference voltage having a same level as that of the signal voltage between an odd-numbered inverter and an even-numbered inverter when electric current is on; and a protection transistor connected between the first wiring line and the second wiring line, and having a gate configured to receive output of the inverter circuit. | 01-23-2014 |
20140293492 | PROTECTIVE CIRCUIT, ELECTRONIC DEVICE, AND METHOD OF DRIVING A PROTECTIVE CIRCUIT - Provided is a method of driving a protective circuit, the protective circuit including a first clamp section and a second clamp section, the first clamp section including a first device, the first clamp section being configured to protect an entire protected circuit of a predetermined area when the first device is driven, the second clamp section including a second device, the second clamp section being configured to protect a predetermined device of the protected circuit when the second device is driven, the method comprising: connecting a predetermined spot of the first clamp section and the gate of the second device of the second clamp section; and causing the gate voltage of the second device to be the potential of the predetermined spot. | 10-02-2014 |
Patent application number | Description | Published |
20080286883 | Dry etching method and production method of magnetic memory device - Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction. | 11-20-2008 |
20090162950 | DRY ETCHING EQUIPMENT AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber. | 06-25-2009 |
20100244169 | SOLID-STATE IMAGING DEVICE, FABRICATION METHOD THEREOF, IMAGING APPARATUS, AND FABRICATION METHOD OF ANTI-REFLECTION STRUCTURE - A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate. | 09-30-2010 |
20110082577 | SHAPE SIMULATION APPARATUS, SHAPE SIMULATION PROGRAM, SEMICONDUCTOR PRODUCTION APPARATUS, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed. | 04-07-2011 |
20110160889 | SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SIMULATION DEVICE, AND SIMULATION PROGRAM - Disclosed herein is a semiconductor manufacturing device including, a chamber, a sensor, a sticking probability calculating section, an acting section, and a control section. | 06-30-2011 |
20120158379 | SIMULATOR, PROCESSING SYSTEM, DAMAGE EVALUATION METHOD AND DAMAGE EVALUATION PROGRAM - Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance. | 06-21-2012 |
20130133832 | SIMULATION METHOD, SIMULATION PROGRAM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device. The method includes: calculating particle density by performing simulation based on a differential equation for the particle density; calculating emission intensity at each wavelength in a visible wavelength region based on the calculated particle density; obtaining an electron energy distribution function by comparing the calculated emission intensity at each wavelength in the visible wavelength region with an actually detected emission spectrum in the visible wavelength region with reference to information on emission species and an emission wavelength in a target manufacturing process; predicting an emission spectrum in an ultraviolet wavelength region by using the electron energy distribution function and a reaction cross-sectional area relating to the emission species; and predicting a damage amount due to the ultraviolet rays based on the predicted emission spectrum in the ultraviolet wavelength region. | 05-30-2013 |
20130337584 | SHAPE SIMULATION APPARATUS, SHAPE SIMULATION PROGRAM, SEMICONDUCTOR PRODUCTION APPARATUS, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD - Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed. | 12-19-2013 |
Patent application number | Description | Published |
20100194012 | SUBSTRATE SUCTION APPARATUS AND METHOD FOR MANUFACTURING THE SAME - Provided is a substrate suction apparatus which has a vacuum suction mechanism and an electrostatic attraction mechanism, and improves planarity of a subject to be processed by improving uniformity in vacuum suction power. A method for manufacturing such substrate suction apparatus is also provided. A substrate suction apparatus ( | 08-05-2010 |
20110157761 | ELECTROSTATIC CHUCK - Provided is an electrostatic chuck ( | 06-30-2011 |
20120120545 | ELECTROSTATIC ATTRACTING STRUCTURE AND FABRICATING METHOD THEREFOR - Provided are an electrostatic attracting structure which allows a strongly integrated structure to be maintained when used, and also allows the structure to be changed freely in configuration after the use, and a method of fabricating the same. The electrostatic attracting structure includes: a plurality of sheet members each having an electrode which is sandwiched between two dielectric materials; and at least one attraction power source, in which the plurality of sheet members are stacked, and by applying a voltage between the electrodes of facing sheet members, the facing sheet members are electrically attracted and fixed, when the electrostatic attracting structure is used, the dielectric material of any one of or both of outermost sheet members attracts the object to be attracted, and after the use, the stacked plurality of sheet members are made separable from one another by canceling the application of the voltage. | 05-17-2012 |