Patent application number | Description | Published |
20080204685 | EXPOSURE APPARATUS, EXPOSURE METHOD AND LITHOGRAPHY SYSTEM - An exposure apparatus includes a first exposure apparatus used for exposing a peripheral portion of a wafer in maskless manner, the first exposure apparatus including a light source configured to emit light, a stage on which the wafer is to be placed, and a light controller configured to control the light emitted from the light source and irradiated onto a peripheral portion of the wafer placed on the stage, the light controller controlling at least one of shape, size and coverage on the wafer of the light emitted from the light source. | 08-28-2008 |
20080301621 | MASK PATTERN CORRECTING METHOD - In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model. | 12-04-2008 |
20090004581 | Exposure apparatus, exposure method and optical proximity correction method - There is disclosed an exposure apparatus which includes an illumination optical system including a light source which emits illumination light, a mask stage which holds a photomask having a mask pattern thereon to be illuminated with the illumination light, and a light intensity distribution filter arranged on a plane, which plane is positioned in the illumination optical system and is optically in relation of Fourier transform to the mask pattern, the light intensity distribution filter configured to vary a light intensity distribution of the illumination light in a cross section of a bundle of the illumination light. | 01-01-2009 |
20090141378 | OPTICAL ELEMENT AND OPTICAL APPARATUS - An optical element includes a substrate, a magnetostrictive film arranged on the substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflects light. An optical apparatus includes a stage including a holder provided with plural holes arranged in a carrying surface thereof for carrying an optical element provided with a magnetostrictive film arranged on a substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflecting light, plural magnetic field generation parts embedded in the plural holes, and a control mechanism for controlling the magnetic field generated by each of the plural magnetic field generation parts, and controlling the film thickness of the magnetostrictive film. | 06-04-2009 |
20090284718 | Liquid Immersion Optical Tool, Method for Cleaning Liquid Immersion Optical Tool, Liquid Immersion Exposure Method and Method for Manufacturing Semiconductor Device - There is disclosed is a liquid immersion optical tool, which comprises a light source, an optical lens system, a stage which moves an object base on which an object is to be placed, a head comprising a liquid immersion medium fluid supply device and a liquid immersion medium fluid discharge device to provide a layer of liquid immersion medium fluid between the optical lens system and the object, a fence which limits a region of the layer of liquid immersion medium fluid, and a cleaning device which cleans a portion having been contacted with the liquid immersion medium fluid by means of a cleaning solution. | 11-19-2009 |
20110229826 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD TO FORM RESIST PATTERN, AND SUBSTRATE PROCESSING APPARATUS - This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure. | 09-22-2011 |
20120009799 | TEMPLATE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND TEMPLATE - According to one embodiment, a template manufacturing method is a method for manufacturing a template for use in an imprint processing in which a pattern having irregularities are formed on a principal surface, and the pattern is brought into contact with a resist member formed on a substrate to be processed, to transfer the pattern to the resist member, the method including implanting charged particles at least into the bottoms of concave portions of the template. | 01-12-2012 |
20140232032 | LITHOGRAPHY ORIGINAL CHECKING DEVICE, LITHOGRAPHY ORIGINAL CHECKING METHOD, AND PATTERN DATA CREATING METHOD - In one embodiment, a lithography original checking method includes applying resin onto a first lithography original having a first concavo-convex pattern, hardening the resin, releasing the hardened resin from the first lithography original and producing a second lithography original having a second concavo-convex pattern corresponding to the first concavo-convex pattern, enlarging the second lithography original, detecting a defect on the enlarged second lithography original, and calculating a position of a defect on the first lithography original based on the position of the detected defect. | 08-21-2014 |