Patent application number | Description | Published |
20080216956 | PLASMA PROCESSING APPARATUS - To provide a plasma processing apparatus using a measuring method of a film thickness of a material to be processed, which method is capable of accurately measuring an actual residual film amount and an etching depth of the layer to be processed. The plasma processing apparatus includes: a detector | 09-11-2008 |
20090159211 | PLASMA PROCESSING APPARATUS - The invention provides a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously realize long life and ensure sufficient light to be received via a light transmitting unit, to enable long term stable operation and to improve the processing accuracy via accurate etching quantity detection. In a plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light transmitting unit composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained by the light transmitting unit, wherein the end surface of the light transmitting unit through which light is entered is arranged at a distance of five times or greater of the mean free path of gas molecules within the vacuum reactor from the end surface of the shower plate facing the plasma. | 06-25-2009 |
20090301655 | Plasma Processing Apparatus - A plasma processing apparatus includes an upper electrode which allows a source gas to flow into a vacuum chamber via a shower plate, a lower electrode facing the upper electrode, on which a sample to be processed is placed, and a detector which detects light from the surface of the sample to be processed via the shower plate. The detector includes at least one light introducing section made up of a transparent body to which the light is input and a spectroscope which analyzes the light obtained at the light introducing section. A plurality of the light-introducing through holes are provided in the shower plate for the at least one light introducing section, and the at least one light introducing section is made up of two members. | 12-10-2009 |
20110100954 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 05-05-2011 |
20120101621 | Plasma Processing Apparatus - A plasma processing apparatus includes a detector for detecting interference light of multiple wavelengths from a surface of a sample during processing, a pattern comparator for comparing actual deviation pattern data on the interference light obtained at a given time during processing and a plurality of standard deviation patterns corresponding to two or more thicknesses of the film, and calculating a deviation, the standard deviation patterns corresponding to interference light data of multiple wavelengths obtained, before the processing of the sample, for processing of another sample, a deviation comparator for comparing the deviation between the data and a predetermined deviation and outputting data on a thickness of the film of the sample at that time, a recorder for recording, as time series data, the data on the thickness of the film, and an endpoint decision unit. | 04-26-2012 |
20130200042 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 08-08-2013 |