| Patent application number | Description | Published |
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| 20090021777 | Print System - A print system capable of accepting a print request over a network, having a simple configuration, and easy to use. The print system includes a digital camera ( | 01-22-2009 |
| 20090238553 | Interchangeable lens type camera system and camera body - An interchangeable lens type camera system includes a camera body and an interchangeable lens mountable to the camera body. An error detector detects whether a communication error occurs between a communication unit of the camera body and a communication unit of the interchangeable lens. A display unit displays a first error handling message when the error detector detects the communication error at a time of activation of the interchangeable lens, and displays a second error handling message when the error detector detects the communication error after activation of the interchangeable lens. | 09-24-2009 |
| 20100195997 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - A camera apparatus and a camera system of the present invention are configured so that a lens unit is attachable/detachable. The lens unit contains at least a lens and an iris, and contains a memory storing setting information required for operating the lens and the iris. When a camera microcomputer checks detection information stored in a memory in a sub-microcomputer at a time of start-up of the camera apparatus, and first detection information is stored in the memory, the setting information is acquired from the lens unit. When second detection information is stored in the memory, the setting information is acquired from another memory in the camera apparatus. Due to this configuration, the time for shifting the switch-on to a photographable state is shortened, and the ease of convenience can be enhanced. | 08-05-2010 |
| 20110200313 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - A camera apparatus and a camera system of the present invention are configured so that a lens unit is attachable/detachable. The lens unit contains at least a lens and an iris, and contains a memory storing setting information required for operating the lens and the iris. When a camera microcomputer checks detection information stored in a memory in a sub-microcomputer at a time of start-up of the camera apparatus, and first detection information is stored in the memory, the setting information is acquired from the lens unit. When second detection information is stored in the memory, the setting information is acquired from another memory in the camera apparatus. Due to this configuration, the time for shifting the switch-on to a photographable state is shortened, and the ease of convenience can be enhanced. | 08-18-2011 |
| 20120148229 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - A camera apparatus and a camera system of the present invention are configured so that a lens unit is attachable/detachable. The lens unit contains at least a lens and an iris, and contains a memory storing setting information required for operating the lens and the iris. When a camera microcomputer checks detection information stored in a memory in a sub-microcomputer at a time of start-up of the camera apparatus, and first detection information is stored in the memory, the setting information is acquired from the lens unit. When second detection information is stored in the memory, the setting information is acquired from another memory in the camera apparatus. Due to this configuration, the time for shifting the switch-on to a photographable state is shortened, and the ease of convenience can be enhanced. | 06-14-2012 |
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| 20080296624 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The object of the present invention is to provide a semiconductor device and the manufacturing method thereof which are capable of preventing decrease in the collector breakdown voltage and reducing the collector resistance. The semiconductor device according to the present invention includes: a HBT formed on a first region of a semiconductor substrate; and an HFET formed on a second region of the semiconductor substrate, wherein the HBT includes: an emitter layer of a first conductivity; a base layer of a second conductivity that has a band gap smaller than that of the emitter layer; a collector layer of the first conductivity or a non-doped collector layer; and a sub-collector layer of the first conductivity which are formed sequentially on the first region, and the HFET includes an electron donor layer including a part of the emitter layer, and a channel layer formed under the electron donor layer. | 12-04-2008 |
| 20090230431 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has as an objective to provide: a semiconductor device to satisfy both of the trade-off characteristic advantages of the HBT; and the HFET and a manufacturing method thereof. The semiconductor device in the present invention is an HBT and HFET integrated circuit. The HBT includes a sub-collector layer, a GaAs collector layer, a GaAs base layer, and an InGaP emitter layer which are sequentially stacked. The sub-collector layer includes a GaAs external sub-collector region, and a GaAs internal sub-collector region disposed on the GaAs external sub-collector region. A mesa-shaped collector part and a collector electrode are separately formed on the GaAs external sub-collector region. The HFET includes a GaAs cap layer, a source electrode, and a drain electrode, the GaAs cap layer including portion of the GaAs external sub-collector region, and the source electrode and the drain electrode being formed on the GaAs cap layer. | 09-17-2009 |
| 20090230482 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device in which an E-FET and a D-FET are integrated on the same substrate, wherein an epitaxial layer includes, in the following order from the semiconductor substrate: a first threshold adjustment layer that adjusts a threshold voltage of a gate of the E-FET and a threshold voltage of a gate of the D-FET; a first etching-stopper layer that stops etching performed from an uppermost layer to a layer abutting on the first etching-stopper layer; a second threshold adjustment layer that adjusts the threshold voltage of the gate of the D-FET; and a second etching-stopper layer that stops the etching performed from the uppermost layer to a layer abutting on the second etching-stopper layer, and at least one of the first etching-stopper layer and the second threshold adjustment layer includes an n-type doped region. | 09-17-2009 |
| 20100171151 | HETEROJUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - An HBT according to this invention includes: a sub-collector layer; a collector layer formed on the sub-collector layer and the base layer including a first collector layer, a second collector layer, a third collector layer, and a fourth collector layer. The first collector layer is formed on the sub-collector layer, and is made of semiconductor different from semiconductor of which the second to the fourth collector layers are made. The fourth collector layer is formed on the first collector layer, and has an impurity concentration lower than an impurity concentration of the second collector layer. The second collector layer is formed on the fourth collector layer, and has an impurity concentration lower than an impurity concentration of the sub-collector layer and higher than an impurity concentration of the third collector layer. The third collector layer is formed between the second collector layer and the base layer. | 07-08-2010 |
| 20100187571 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object of the present invention is to provide a semiconductor resistive element having excellent linearity. A semiconductor device according to the present invention includes a HBT which is formed on a GaAs substrate and includes a group III-V compound semiconductor, and a semiconductor resistive element made of at least one layer included in a semiconductor epitaxial layer included in the HBT, and the semiconductor resistive element includes helium impurities. | 07-29-2010 |
| 20100224908 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three layers; a heterojunction bipolar transistor formed in a region of the nitride semiconductor layer; and a field-effect transistor formed in a region of the nitride semiconductor layer, the region being different from the region in which the heterojunction bipolar transistor is formed. | 09-09-2010 |
| 20100314696 | FIELD-EFFECT TRANSISTOR AND METHOD OF FABRICATING SAME - A field-effect transistor having a high-quality semiconductor/oxide interface and a method of fabricating the field-effect transistor are provided. The field-effect transistor includes a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a semiconductor layer formed in the donor layer and containing Pt; an oxide layer formed on the semiconductor layer and containing a perovskite-type oxide which functions as a gate insulating film; and a gate electrode formed on the oxide layer. | 12-16-2010 |
| 20110250726 | SEMICONDUCTOR DEVICE HAVING A HETERO-JUNCTION BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - Method for manufacturing a semiconductor device. A channel layer is formed by epitaxially growing a semiconductor layer, in which an ion species of a first conductivity is implanted on a semiconductor substrate. A source region, a drain region, and an emitter region which are of the first conductivity, are formed by activating, using annealing, a portion of the semiconductor substrate in which the ion species has been implanted. An emitter layer of the first conductivity, a base layer of a second conductivity having a band gap smaller than a band gap of the emitter layer, and a collector layer of the first conductivity or a non-doped collector layer are sequentially and epitaxially grown on the channel layer. | 10-13-2011 |
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| 20090278629 | COMPOSITE FILTER - A composite filter downsized without degrading its characteristics is disclosed. The filter includes a surface acoustic wave filter and a LC filter coupled to the surface acoustic wave filter. The LC filter is formed by combining a π-shaped LC filter formed of two capacitors and an inductor coupled together in a π-shape with a capacitor coupled in parallel to the inductor. The two capacitors of the π-shaped LC filter are placed on a piezoelectric substrate with their comb-shaped electrodes opposed to each other. This opposing direction differs from an opposing direction of comb-shaped electrodes of a surface acoustic wave resonator. | 11-12-2009 |
| 20100007445 | TRANSMISSION LINE RESONATOR, HIGH-FREQUENCY FILTER USING THE SAME, HIGH-FREQUENCY MODULE, AND RADIO DEVICE - A transmission line type resonator having a low-loss characteristic. In order to realize the low-loss characteristic, the transmission line type resonator in the present invention includes a laminate body formed of a plurality of dielectric sheets, a transmission line of complex right hand left hand system disposed between the plurality of dielectric sheets, and an external connection terminal disposed at the end face of the transmission line type resonator and connected with the transmission line of complex right hand left hand system. | 01-14-2010 |
| 20100201460 | RESONATOR AND FILTER USING THE SAME - The resonator includes first high-impedance wiring plate-like, arranged parallel to top-surface ground electrode; second high-impedance wiring plate-like, arranged so as to face first high-impedance wiring; first columnar conductor electrically connecting first high-impedance wiring to second high-impedance wiring; first low-impedance wiring arranged between first high-impedance wiring and second high-impedance wiring; second columnar conductor electrically connecting first high-impedance wiring to first low-impedance wiring; second low-impedance wiring arranged between first low-impedance wiring and second high-impedance wiring; and third columnar conductor electrically connecting second high-impedance wiring to second low-impedance wiring, to reduce the area size the resonator. | 08-12-2010 |
| 20100207706 | LEFT-HANDED FILTER - A left-handed filter of the present invention includes an interstage coupling element connected to a first capacitor and a ground, a second capacitor connected to the interstage coupling element, a third capacitor connected to the second capacitor, a first inductor connected to the connection point of a fourth capacitor and the second capacitor, and the ground, a second inductor connected to a fifth capacitor and the ground, a first input and output coupling element connected to a sixth capacitor, and a second input and output coupling element connected to the third capacitor. The first and second capacitors, the third and sixth capacitors, the first and second inductors, and third and fourth inductors are respectively arranged in symmetrical positions with respect to an interstage coupling element. | 08-19-2010 |
| 20110043304 | LEFT-HANDED RESONATOR AND LEFT-HANDED FILTER USING THE SAME - A left-handed resonator according to the present invention includes: a series body in which an inductor component and a capacitor component are connected in series; and a parallel body in which an inductor component and a capacitor component are connected in parallel, wherein one end of the series body and one end of the parallel body are connected, the other end of the parallel body is grounded, and the other end of the series body is grounded. With this configuration, a −1-order mode is excited using only one unit cell including the series body and the parallel body, so that dimensions of the left-handed resonator can be miniaturized. | 02-24-2011 |
| 20120028247 | PLASMON SENSOR AND MANUFACTURING METHOD THEREFOR, AND METHOD FOR INSERTING SAMPLE INTO PLASMON SENSOR - A plasmon sensor includes a first metal layer and a second metal layer having an upper surface facing a lower surface of the first metal layer. The upper surface of the first metal layer is configured to receive an electromagnetic wave. A hollow space is provided between the first and second metal layers, and is configured to be filled with a test sample containing a medium. This plasmon sensor has a small size and a simple structure. | 02-02-2012 |
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| 20120204194 | DRIVE DEVICE FOR OPTICAL DISC APPARATUS - A drive device for an optical disc apparatus, wherein the tooth comprises a tooth body fixed to an optical pickup; support pieces projecting from the tooth body toward a lead screw; resin spring pieces extending from the support pieces in a direction orthogonal to the axial direction of the lead screw; a plate part formed in a direction parallel to the axial direction of the lead screw from the resin spring pieces; meshing cogs formed on the plate part on the side near the lead screw; a cover projecting above the lead screw from the plate part disposed above the meshing cogs, straddling the lead screw, and bending sharply downward at the distal end; and a handle projecting from the tooth body. | 08-09-2012 |
| 20120204195 | DRIVE DEVICE FOR OPTICAL DISC APPARATUS - A drive device for an optical disc apparatus, wherein the tooth comprises a tooth body fixed to an optical pickup, two support pieces projecting from the tooth body toward a lead screw, two resin spring pieces provided with a base part on the projecting end of each of the support pieces and extending in a direction orthogonal to the axial direction of the lead screw, a plate part having a base part on the extending ends of the resin spring pieces and formed in a direction parallel to the axial direction of the lead screw, meshing cogs formed on the plate part on the side near the lead screw, and a linking part formed across the space between the resin spring pieces. | 08-09-2012 |
| 20120204196 | DRIVE DEVICE FOR OPTICAL DISC APPARATUS - A drive device for an optical disc apparatus comprising: a lever arm for supporting a traverse chassis while allowing the traverse chassis to be raised and lowered; and a cam slider in cam engagement with the lever arm, the cam slider moving in a direction substantially orthogonal to a movement direction of the lever arm to cause the lever arm to move up and down; wherein the lever arm is provided with a boss projecting toward the cam slider, and a supported part supported by the cam slider in a chucked position of an optical disc; and wherein the cam slider is provided with a groove in engagement with the boss, and a support part for supporting the supported part in the chucked position of the optical disc. | 08-09-2012 |
| 20120204198 | DRIVE DEVICE FOR OPTICAL DISC APPARATUS - A drive device for an optical disc apparatus, comprising: a traverse chassis; a vertically moving lever arm for covering part of the lower surface of the traverse chassis and supporting the traverse chassis; a first circuit board disposed on the upper surface of the traverse chassis; a second circuit board disposed on the lower surface of the traverse chassis; and a flexible cable that passes between the traverse chassis and the lever arm, is connected by one end thereof to the first circuit board, and is connected by the other end thereof to the second circuit board; wherein an opening that has a greater width than the width of the flexible cable is provided to a section of the lever arm in contact with the flexible cable. | 08-09-2012 |
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| 20090288862 | Wired circuit board and producing method thereof - A wired circuit board includes an insulating base layer, a conductive pattern formed on the insulating base layer, a tin-based thin layer formed on a surface of the conductive pattern, and containing at least tin oxide, and an insulating cover layer formed on the insulating base layer so as to cover the tin-based thin layer. | 11-26-2009 |
| 20100224391 | Suspension board with circuit and production method thereof - A suspension board with circuit includes a metal supporting board, an insulating base layer formed on the metal supporting board, a conductive pattern formed on the insulating base layer, an insulating cover layer formed on the insulating base layer so as to cover the conductive pattern, and an insertion portion to be inserted into an E-block. A thickness of the insulating cover layer in the insertion portion is larger than a thickness of the insulating cover layer in a portion other than the insertion portion. | 09-09-2010 |
| 20100304298 | NEGATIVE PHOTOSENSITIVE MATERIAL, PHOTOSENSITIVE BOARD EMPLOYING THE NEGATIVE PHOTOSENSITIVE MATERIAL, AND NEGATIVE PATTERN FORMING METHOD - A negative photosensitive material is provided which has a lower linear expansion coefficient and a lower hygroscopic expansion coefficient and is excellent in gradational patternability and PI etchability in patterning. The negative photosensitive material comprises: | 12-02-2010 |
| 20110084787 | PHOTOSENSITIVE RESIN COMPOSITION, METAL-BASE-CONTAINING CIRCUIT BOARD PRODUCTION METHOD EMPLOYING THE PHOTOSENSITIVE RESIN COMPOSITION, AND METAL-BASE-CONTAINING CIRCUIT BOARD - A photosensitive resin composition which is capable of reducing stress occurring due to thermal history, such as a heat treatment, a metal-base-containing circuit board production method which suppresses the warpage of a circuit board by employing the photosensitive resin composition and a metal-base-containing circuit board. The photosensitive resin composition comprises a polyamide acid, a 1,4-dihydropyridine derivative and an amide compound. | 04-14-2011 |
| 20120070734 | LITHIUM SECONDARY BATTERY AND ANODE THEREFOR - The present invention provides an anode of a lithium secondary battery comprising a current collector layer and an active material layer laminated on the current collector layer, wherein the current collector layer has a laminar structure without an opening, the active material layer has a network structure with an opening, and the shape of the opening in a planar view is a substantially regular polygon of pentagon or above and/or a substantial circle. The anode of the present invention can achieve charge-discharge-cycle property superior to that of the prior art. | 03-22-2012 |
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| 20090146273 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device adopting, as a layout of pads connected to an external package on an LSI, a zigzag pad layout in which the pads are arranged shifted alternately, which can avoid occurrences of short-circuiting of wires, an increase in chip size due to avoidance of short-circuiting, propagation of power supply or GND noise due to reduction in IO cell interval, and signal transmission delay difference due to displacement of pad positions. | 06-11-2009 |
| 20110012245 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device adopting, as a layout of pads connected to an external package on an LSI, a zigzag pad layout in which the pads are arranged shifted alternately, which can avoid occurrences of short-circuiting of wires, an increase in chip size due to avoidance of short-circuiting, propagation of power supply or GND noise due to reduction in IO cell interval, and signal transmission delay difference due to displacement of pad positions. In a semiconductor device wherein plural pads on a semiconductor element which are connected to function terminals on an external package are arranged in two lines along the periphery of the semiconductor element, an arrangement order of the plural pads on the semiconductor element is different from an arrangement order of the function terminals on the external package. | 01-20-2011 |
