Patent application number | Description | Published |
20100133568 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes: a substrate including through electrodes; a light emitting element bonded onto the substrate and connected to the through electrodes; and a dielectric film made of a translucent inorganic material and spaced from the light emitting element so that an internal space is formed between the dielectric film and the substrate, emission light from the light emitting element being allowed to be emitted through the dielectric film, and a manufacturing the same are provided. | 06-03-2010 |
20100148198 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a light emitting device includes: forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate; forming a dielectric film on a second surface side opposite to the first surface of the multilayer body, the dielectric film having a first and second openings on a p-side electrode and an n-side electrode provided on the second surface; forming a seed metal on the dielectric film and an exposed surface of the first and second openings; forming a p-side metal interconnect layer and an n-side metal interconnect layer on the seed metal; separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal, which is provided between the p-side metal interconnect layer and the n-side metal interconnect layer; and forming a resin in a space from which the seed metal is removed. | 06-17-2010 |
20110018026 | LIGHT EMITTING DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SAME - A method for manufacturing a light emitting device includes: measuring at least one of each wavelength of the emitted light of the light emitting element, each optical output of the emitted light of the light emitting element, and each chromaticity of the mixed light emitted through the mixed resin in a manufacturing process of the light emitting device; and adjusting chromaticity for each light emitting device by performing a prescribed chromaticity adjustment with regard to the mixed resin, on basis of a result obtained in the measuring, so that the chromaticity of the mixed light falls within a preset prescribed range. | 01-27-2011 |
20110233585 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating film, a first interconnection, a second interconnection, a first metal pillar, a second metal pillar, a resin, and a fluorescent layer. The semiconductor layer has a first major surface, a second major surface formed on an opposite side to the first major surface, and a light emitting layer. The first electrode and the second electrode are provided on the second major surface of the semiconductor layer. The fluorescent layer faces to the first major surface of the semiconductor layer and includes a plurality of kinds of fluorescent materials having different peak wavelengths of emission light. | 09-29-2011 |
20110233586 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface. | 09-29-2011 |
20110291149 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection. | 12-01-2011 |
20110297980 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip. | 12-08-2011 |
20110297994 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted in a bent state on a curved surface. The plurality of semiconductor layers includes a first main surface, a second main surface opposite to the first main surface, and a light emitting layer, the plurality of semiconductor layers being separated from one another. A material is provided between the plurality of the semiconductor layers separated from one another. The member has a higher flexibility than the semiconductor layers being. | 12-08-2011 |
20120097972 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a light emitting device includes forming a multilayer body including a light emitting layer so that a first surface thereof is adjacent to a first surface side of a translucent substrate. A dielectric film on a second surface side opposite to the first surface of the multilayer body is formed having first and second openings on a p-side electrode and an n-side electrode. A seed metal on the dielectric film and an exposed surface of the first and second openings form a p-side metal interconnect layer and an n-side metal interconnect layer separating the seed metal into a p-side seed metal and an n-side seed metal by removing a part of the seed metal. A resin is formed in a space from which the seed metal is removed. | 04-26-2012 |
20130299864 | LIGHT EMITTING DEVICE, LIGHT EMITTING MODULE, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a first insulating layer, a p-side interconnect layer, an n-side interconnect layer and a second insulating layer. The semiconductor layer includes a first surface, a second surface opposite to the first surface, and a light emitting layer. The p-side electrode is provided on the second surface in a region including the light emitting layer. The n-side electrode is provided on the second surface in a region not including the light emitting layer. The p-side interconnect layer includes a p-side external terminal exposed from the second insulating layer at a third surface having a plane orientation different from a plane orientation of the first surface and a plane orientation of the second surface. The n-side interconnect layer includes an n-side external terminal exposed from the second insulating layer at the third surface. | 11-14-2013 |
20140293645 | ILLUMINATION DEVICE AND LIGHT-GUIDING MEMBER - In one embodiment, an illumination device includes a light-guiding unit having a light output surface which outputs light and a back surface facing the light output surface, wherein the light-guiding unit has a curved surface in a region of the back surface farther than a first position on the back surface that is away by a first distance from an axis passing the light output surface and the back surface, and a rough surface in a region of the light output surface farther than a second position on the light output surface that is away by a second distance from the axis in a same direction as a direction from the axis toward the first position, and where an intersection of the axis and the back surface is an origin point, and a direction of the axis from the back surface to the light output surface is positive, a normal line of the curved surface intersects with the axis at the positive side of the axis, and an angle formed by a normal line vector at the second position in a direction toward the light output surface from the back surface of the light output surface and a vector in a direction from the curved surface to the second position is equal to or more than a critical angle. | 10-02-2014 |
20150017750 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes a light emitting chip and a fluorescent material layer. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The fluorescent material layer is provided on the first major surface and has a larger planer size than the light emitting chip. | 01-15-2015 |
Patent application number | Description | Published |
20080201150 | VOICE CONVERSION APPARATUS AND SPEECH SYNTHESIS APPARATUS - A conversion rule and a rule selection parameter are stored. The conversion rule converts a spectral parameter of a source speaker to a spectral parameter of a target speaker. The rule selection parameter represents the spectral parameter of the source speaker. A first conversion rule of start timing and a second conversion rule of end timing in a speech unit of the source speaker are selected by the spectral parameter of the start timing and the end timing. An interpolation coefficient corresponding to the spectral parameter of each timing in the speech unit is calculated by the first conversion rule and the second conversion rule. A third conversion rule corresponding to the spectral parameter of each timing in the speech unit is calculated by interpolating the first conversion rule and the second conversion rule with the interpolation coefficient. The spectral parameter of each timing is converted to a spectral parameter of the target speaker by the third conversion rule. A spectral acquired from the spectral parameter of the target speaker is compensated by a spectral compensation quantity. A speech waveform is generated from the compensated spectral. | 08-21-2008 |
20090144053 | SPEECH PROCESSING APPARATUS AND SPEECH SYNTHESIS APPARATUS - An information extraction unit extracts spectral envelope information of L-dimension from each frame of speech data. The spectral envelope information does not have a spectral fine structure. A basis storage unit stores N bases (L>N>1). Each basis is differently a frequency band having a maximum as a peak frequency in a spectral domain having L-dimension. A value corresponding to a frequency outside the frequency band along a frequency axis of the spectral domain is zero. Two frequency bands of which two peak frequencies are adjacent along the frequency axis partially overlap. A parameter calculation unit minimizes a distortion between the spectral envelope information and a linear combination of each basis with a coefficient by changing the coefficient, and sets the coefficient of each basis from which the distortion is minimized to a spectral envelope parameter of the spectral envelope information. | 06-04-2009 |
20120239390 | APPARATUS AND METHOD FOR SUPPORTING READING OF DOCUMENT, AND COMPUTER READABLE MEDIUM - According to one embodiment, an apparatus for supporting reading of a document includes a model storage unit, a document acquisition unit, a feature information extraction, and an utterance style estimation unit. The model storage unit is configured to store a model which has trained a correspondence relationship between first feature information and an utterance style. The first feature information is extracted from a plurality of sentences in a training document. The document acquisition unit is configured to acquire a document to be read. The feature information extraction unit is configured to extract second feature information from each sentence in the document to be read. The utterance style estimation unit is configured to compare the second feature information of a plurality of sentences in the document to be read with the model, and to estimate an utterance style of the each sentence of the document to be read. | 09-20-2012 |
20120323569 | SPEECH PROCESSING APPARATUS, A SPEECH PROCESSING METHOD, AND A FILTER PRODUCED BY THE METHOD - According to one embodiment, a speech processing apparatus includes a histogram calculation unit, a cumulative frequency calculation unit, and a filter production unit. The histogram calculation unit is configured to calculate a first histogram from a first speech feature extracted from speech data, and to calculate a second histogram from a second speech feature different from the first speech feature. The cumulative frequency calculation unit is configured to calculate a first cumulative frequency by accumulating a frequency of the first histogram, and to calculate a second cumulative frequency by accumulating a frequency of the second histogram. The filter production unit is configured to produce a filter having a characteristic to get the second cumulative frequency near to the first cumulative frequency. | 12-20-2012 |