Patent application number | Description | Published |
20080299686 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device, includes; measuring a within-wafer distribution of a physical quantity; and etching the wafer so that the physical quantity get close to constant within the wafer. Alternatively, a method for manufacturing a semiconductor device, includes, measuring a within-wafer distribution of a physical quantity of at least one of a plurality of semiconductor layers provided in a wafer; determining a within-wafer distribution of etching amount for the at least one of the plurality of semiconductor layers based on the measured within-wafer distribution of the physical quantity; and etching the at least one of the plurality of semiconductor layers based on the determined within-wafer distribution of the etching amount so that the etching amount is locally varied within the wafer. | 12-04-2008 |
20110068480 | SEMICONDUCTOR DEVICE AND ADHESIVE SHEET - The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent. | 03-24-2011 |
20120187542 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF THE SAME - According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The method includes: (a) forming cutting grooves in an element formation surface of a semiconductor wafer on which semiconductor elements are formed; (b) applying a protection tape on the element formation surface of the semiconductor wafer; (c) grinding a rear surface of the semiconductor wafer to thin the semiconductor wafer and to divide the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor elements are formed; (d) forming an adhesive layer on the rear surface of the semiconductor wafer; (e) separating and cutting the adhesive layer for each of the semiconductor chips; and (f) removing the protection tape. The (e) is performed by spraying a high-pressure air to the adhesive layer formed on the rear surface of the semiconductor wafer while melting or softening the adhesive layer by heating. | 07-26-2012 |
20120329369 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - According to one embodiment, a substrate processing method will be disclosed. The method includes attaching a substrate to be processed onto a supporting substrate via an adhesive layer, removing an outer peripheral edge portion of the substrate to be processed together with the adhesive sticking to the outer peripheral edge portion, and grinding a surface of a side opposite to the supporting substrate of the substrate to be processed whose outer peripheral edge portion is removed. | 12-27-2012 |
Patent application number | Description | Published |
20090096110 | METHOD FOR MANUFACTURING A STACKED SEMICONDUCTOR PACKAGE, AND STACKED SEMICONDUCTOR PACKAGE - A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate. | 04-16-2009 |
20100311224 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, a manufacturing method of a semiconductor device includes forming a plurality of first trenches in a semiconductor substrate, forming an insulating member in the first trenches, removing a part of a portion of the insulating member, forming second trenches in the insulating member, and attaching a protection film. The semiconductor substrate has a first and a second main surface. The insulating member has an upper face located higher than the first main surface. The portion is located higher than the first main surface. | 12-09-2010 |
20110163459 | METHOD FOR MANUFACTURING A STACKED SEMICONDUCTOR PACKAGE, AND STACKED SEMICONDUCTOR PACKAGE - A method for manufacturing a stacked semiconductor package where a plurality of semiconductor chips are stacked on a substrate, including: forming insulating layers at portions of a wafer corresponding to sides of the plurality of semiconductor chips when the plurality of semiconductor chips are in the wafer; processing the wafer so as to obtain the plurality of semiconductor chips; subsequently stacking the plurality of semiconductor chips on the substrate such that the insulating layers formed at the sides of the plurality of semiconductor chips are respectively positioned at the same side as one another; and forming a wiring over the insulating layers formed at the sides of the plurality of semiconductor chips so that the plurality of semiconductor chips are electrically connected with one another and one or more of the plurality of semiconductor chips are electrically connected with the substrate. | 07-07-2011 |