Patent application number | Description | Published |
20080242035 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The performance of the semiconductor device which formed the metal silicide layer in the salicide process is improved. An element isolation region is formed in a semiconductor substrate by the STI method, a gate insulating film is formed, a gate electrode is formed, n | 10-02-2008 |
20080311718 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiCl | 12-18-2008 |
20090011566 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - After gate insulating films, gate electrodes, and n | 01-08-2009 |
20090149020 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A technology is provided which allows, in a coupling portion obtained by burying a conductive material within a coupling hole bored in an insulating film, the removal of a natural oxide film on the surface of a silicide layer which is present at the bottom portion of the coupling hole. A coupling hole is bored in an interlayer insulating film (first and second insulating films) to expose the surface of a nickel silicide layer at the bottom portion of the coupling hole. Then, reduction gases including a HF gas and a NH | 06-11-2009 |
20090191707 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - To provide a technique capable of improving the reliability of a semiconductor element and its product yield by reducing the variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate | 07-30-2009 |
20100093139 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device with improved reliability which includes a metal silicide layer formed by a salicide process. After forming gate electrodes, an n | 04-15-2010 |
20100129974 | METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICECIRCUIT DEVICE - When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed. | 05-27-2010 |
20100227472 | METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - To solve a problem that it becomes difficult to lower contact resistance between nickel-based metal silicide and metal for contact as the result of the miniaturization of the hole. One invention of the present application is a method of manufacturing a semiconductor integrated circuit device having a MISFET subjected to silicidation of a source/drain region and the like by nickel-based metal silicide, the method performing a heat treatment for the upper surface of a silicide film in a non-plasma reducing vapor phase atmosphere containing a gas having a nitrogen-hydrogen bond as one of main gas components, before forming a barrier metal at a contact hole provided at a pre-metal insulating film. | 09-09-2010 |
20110070731 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a technology capable of improving reliability and manufacturing yield of a semiconductor device by reducing variations of electrical characteristics in connection hole portions. After a semiconductor wafer is placed over a wafer stage provided in a chamber for dry cleaning treatment of a deposition system, dry cleaning treatment is performed to a principal surface of the semiconductor wafer by supplying reducing gas, sequentially, heat treatment is performed to the semiconductor wafer at a first temperature of 100 to 150° C. by a showerhead which is maintained at 180° C. Next, after the semiconductor wafer is vacuum transferred from the chamber to a chamber for heat treatment, heat treatment is performed to the semiconductor wafer at a second temperature of 150 to 400° C. in the chamber, thereby removing a product remaining over the principal surface of the semiconductor wafer. | 03-24-2011 |
20110165743 | METHOD FOR MANUFACTURING A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed. | 07-07-2011 |
20120077321 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - Reliability of a semiconductor element and its product yield are improved by reducing variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310° C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi) | 03-29-2012 |