| Patent application number | Description | Published |
|---|
| 20080296583 | Display Device And Manufacturing Method of The Same - A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode. | 12-04-2008 |
| 20080303030 | Display device and method of manufacturing the same - A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode. | 12-11-2008 |
| 20080308811 | Display device - The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view. | 12-18-2008 |
| 20090050896 | Display device - The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+ Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+ Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current. | 02-26-2009 |
| 20090061575 | Display device and fabrication method thereof - The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO | 03-05-2009 |
| 20090065777 | Display Device and Manufacturing Method Therefor - In a display device of the present invention which forms thin film transistors on a substrate, the thin film transistor comprises: a silicon nitride film which is formed on the substrate in a state that the silicon nitride film covers a gate electrode; a silicon oxide film which is selectively formed on the silicon nitride film; a semiconductor layer which is formed at least on an upper surface of the silicon oxide film and includes a pseudo single crystal layer or a polycrystalline layer; and a drain electrode and a source electrode which are formed on an upper surface of the semiconductor layer by way of a contact layer, wherein either one of the pseudo single crystal layer and the poly-crystalline layer is formed by crystallizing the amorphous silicon layer, and a peripheral-side wall surface of the pseudo single crystal layer or the polycrystalline layer is contiguously constituted with a peripheral-side wall surface of the silicon oxide film below the pseudo single crystal layer or the polycrystalline layer without a stepped portion. | 03-12-2009 |
| 20090073149 | Display device - The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed. | 03-19-2009 |
| 20090095957 | Display device and method of manufacturing display device - To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer. | 04-16-2009 |
| 20090218574 | Display device and manufacturing method therefor - A display device includes a thin film transistor above a substrate, in which the thin film transistor is configured to include a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer formed to stride over the gate electrode on the gate insulating film, an inter-layer insulating film formed to cover the semiconductor layer, and a pair of electrodes formed to be connected to each of sides of the semiconductor layer interposing the gate electrode therebetween through contact holes formed through the inter-layer insulating film, high concentration impurity layers are formed at each connecting portion of the electrodes of the semiconductor layer, and an annular low-concentration impurity layer is formed to surround at least one of the high concentration impurity layers. | 09-03-2009 |
| 20090218575 | Display device and manufacturing method thereof - Provided is a display device including a p-type thin film transistor formed on a substrate, in which the p-type thin film transistor includes: a gate electrode; a drain electrode; a source electrode; an insulating film; a semiconductor layer formed on a top surface of the gate electrode through the insulating film; and diffusion layers of p-type impurities formed at each of an interface between the drain electrode and the semiconductor layer and an interface between the source electrode and the semiconductor layer, the drain electrode and the source electrode being formed so as to be opposed to each other with a clearance formed therebetween on a top surface of the semiconductor layer. | 09-03-2009 |
| 20090230397 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked. | 09-17-2009 |
| 20090261329 | DISPLAY DEVICE - Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×10 | 10-22-2009 |
| 20100032673 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced. | 02-11-2010 |
| 20100032674 | Display Device - An object of the present invention is to provide a display device where small thin film transistors with a lower off current can be formed. The present invention provides a display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate electrode is formed on a semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first thin film transistor and a second thin film transistor, and the above described semiconductor layer is divided into individual regions for each film transistor, the above described semiconductor layer is provided with a common region shared either by the drain region of the above described first thin film transistor and the source region of the above described second thin film transistor or by the source region of the above described first thin film transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor. | 02-11-2010 |
| 20100032680 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith. | 02-11-2010 |
| 20100032681 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes: a transparent substrate; gate electrodes which are stacked on the transparent substrate; semiconductor films which are stacked above the gate electrodes and constitute thin film transistors together with the gate electrodes; source electrodes and drain electrodes which are formed above the semiconductor films; an insulation film which is stacked between the source electrodes and the semiconductor films and between the drain electrodes and the semiconductor films; and contact holes which are formed in the insulation film so as to connect the source electrodes and the drain electrodes with the semiconductor films. The semiconductor film includes a connection region which is positioned at least below the contact hole and is connected with the source electrode, and a connection region which is positioned at least below the contact hole and is connected with the drain electrode, and impurities are implanted into the connection regions. | 02-11-2010 |
| 20100096632 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole. | 04-22-2010 |
| 20100096645 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a display device and a display device which can reduce the number of times that an insulation substrate is put into a CVD device and is taken out from the CVD device are provided. The manufacturing method of a display device includes the steps of forming a conductive layer including first electrode films and second electrode films, a first insulation layer, semiconductor films, a second insulation layer and a protective layer on an insulation substrate; forming first resist films having a predetermined thickness which are arranged in first regions above the semiconductor films, opening portions which are arranged in second regions above the second electrode films and second resist films having a large thickness which are arranged in regions other than the first regions and the second regions on the protective layer; etching portions below the second regions, removing the first resist films by ashing; forming first holes which reach the semiconductor films below the first regions and second holes which reach the second electrode films below the second regions; removing the second resist films, and forming lines which are connected to the semiconductor films and lines which are connected to the second electrode films. | 04-22-2010 |
| 20100102322 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - The display device having a thin film transistor formed on a substrate including a display portion is provided. The thin film transistor including: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor laminated film formed on top the gate insulating film so as to extend over the gate electrode, the semiconductor laminated film being formed by laminating at least a polycrystalline semiconductor film and an amorphous semiconductor film, a first electrode and a second electrode disposed on top of the semiconductor laminated film so as to be opposed to each other across a region superposing the gate electrode. In the display device, the semiconductor laminated film is formed immediately below a wiring extending from the first electrode and immediately below a wiring extending from the second electrode. | 04-29-2010 |
| 20100109009 | DISPLAY DEVICE - Provided is a display device capable of suppressing generation of optical leakage current as well as increase in capacitance in a case where a plurality of thin film transistors (TFTs) including a gate electrode film on a light source side are formed in series. Relative areas of opposing regions between a semiconductor film and the gate electrode film with respect to channel regions are different in at least a part of the plurality of TFTs, to thereby provide a flat panel display having a structure for suppressing increase in capacitance while suppressing generation of optical leakage current. | 05-06-2010 |
| 20100109010 | DISPLAY DEVICE - A display device having thin film transistors which can efficiently suppress an OFF-leak current while suppressing the decrease of an ON current is provided. The display device includes an insulation substrate, and thin film transistors which are formed on the insulation substrate. Each thin film transistor includes a conductive layer on which a gate electrode is formed, a first insulation layer which is formed on the conductive layer, a semiconductor layer which is formed on the first insulation layer and has a first semiconductor film thereof formed above the gate electrode, the first semiconductor film having a first region and a second region which are spaced apart from each other on an upper surface thereof, a first electrode which is connected to the upper surface of the first semiconductor film via the first region, and a second electrode which is connected to the upper surface of the first semiconductor film via the second region. A portion of the gate electrode which is covered with the first semiconductor film is arranged closer to the first region than the second region. | 05-06-2010 |
| 20100117091 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device having thin film transistors which can acquire an appropriate ON current and an appropriate OFF current and a manufacturing method thereof are provided. A display device includes: a transparent substrate; and a plurality of thin film transistors which are formed on the transparent substrate. Each thin film transistor includes a gate electrode which is stacked on the transparent substrate, a source electrode and a drain electrode which are stacked over the gate electrode, a first semiconductor film which is stacked between the gate electrode, and the source electrode and the drain electrode so as to control an electric current which flows between the source electrode and the drain electrode, an insulation film which is stacked on the first semiconductor film in a contacting manner in a state where a source-electrode-side edge portion and a drain-electrode-side edge portion of the first semiconductor film are exposed, and a second semiconductor film and a third semiconductor film which are stacked between the source-electrode-side edge portion and the source electrode T as well as between the drain-electrode-side edge portion and the drain electrode. The third semiconductor film is connected with the source electrode and the drain electrode by an ohmic contact. The second semiconductor film is formed below the third semiconductor film with resistance higher than resistance of the third semiconductor film. | 05-13-2010 |
| 20100201608 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A technique that can prevent breakdown of a thin film transistor due to static electricity is provided. A manufacturing method of a display device includes, in forming a plurality of thin film transistors constituting a drive circuit outside a display region as an assembly of pixels, forming a first wiring that is connected to gate electrodes of the thin film transistors to cause the thin film transistors to perform generating operation of a drive signal and a second wiring that connects gate electrodes of the thin film transistors adjacent to one another in the forming region of the drive unit in the same layer as the first wiring, and cutting the second wiring after forming the connected thin film transistors. | 08-12-2010 |
| 20100230675 | DISPLAY DEVICE - A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side. | 09-16-2010 |
| 20110024763 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device which has thin film transistors, wherein a semiconductor layer includes a first layer, second layers and third layers, the first layer has a channel region, the second layers are an impurity layer, the third layers are a low-concentration impurity layer, the second layers have connection portions connected with an electrodes, the third layers are formed to annularly surround the second layers, a channel-region-side edge portion out of edge portions of the third layer is in contact with the first layer, the edge portions of the third layer but the channel-region-side edge portion are in contact with an interlayer insulation film, the second layers have a first region where the second layer overlaps with a gate electrode and a second region where the second layer does not overlap with the gate electrode, and the connection portion is in the second region. | 02-03-2011 |
| 20110101357 | DISPLAY DEVICE - A display device which uses a TFT having a gate electrode film thereof arranged on a light source side can also suppress the increase of parasitic capacitance while suppressing the generation of a light leakage current. On at least one end of the TFT, between a high concentration region which constitutes a source region or a drain region and a channel region, a first low concentration region which is arranged on a high concentration region side and exhibits low impurity concentration and a second low concentration region which exhibits impurity concentration even lower than the impurity concentration of the first low concentration region are provided in this order. | 05-05-2011 |
