Patent application number | Description | Published |
20080220258 | HELICAL SUBSTITUTED POLYACETYLENE STRUCTURE, METHOD FOR PRODUCING THE SAME, DEVICE STRUCTURE, ION TRANSPORT FILM AND GAS SEPARATION FILM - A helical substituted polyacetylene structure including a substrate and a substituted polyacetylene with a periodic main chain having a helical periodic structure, wherein the substituted polyacetylene is disposed inclined on the surface of the substrate with the inclination angle between the main helical axis of the substituted polyacetylene and the surface of the substrate falling in a range of 60° or more and 90° or less. A device structure in which a first electrode, the substituted polyacetylene with the periodic main chain having a helical periodic structure and a second electrode are sequentially disposed on a substrate. | 09-11-2008 |
20080220283 | SUBSTITUTED POLYACETYLENE, COMPLEX AND DEVICE STRUCTURE - A substituted polyacetylene having an organic functional group bondable to the surface of a metal, a metal oxide or an alloy at least one of the polymer terminals, and a device structure having the substituted polyacetylene and two or more independent electrodes. A helical substituted polyacetylene having a helical structure with a periodic main chain. The organic functional group is at least one selected from the group consisting of a thiol group, a sulfide group, a disulfide group, a thioacetyl group, an isocyanide group, a carboxylic acid group and a phosphoric acid group. | 09-11-2008 |
20090061255 | BLOCK POLYMER, COMPOSITE OF METAL AND BLOCK POLYMER, AND DEVICE - A composite having a metal substance bonded to a block polymer. The composite is capable of electric bonding via the metallic substance. A device in which a pair of electrodes are connected via a polymer chain of the block polymer. The block polymer has in at least a part thereof a block structure of a repeating unit that has in a side chain thereof an organic functional group for bonding to at least one of the metallic entities. The polymer main chain of the block structure has a helical shape. In the composite of a metal and the block polymer, a part of the block structure of the block polymer is bonded to the metal species. In the device having the block polymer and an electrode composed of the metallic substance, a part of the block structure of the block polymer is bonded to the metallic substance. | 03-05-2009 |
20090159856 | BLOCK POLYMER AND DEVICE - The invention provides a block polymer capable of being used as a molecular wire facilitating injection of carriers between itself and an electrode, and a device in which electrodes are bridged by one molecule. The block polymer has a main chain composed of polyacetylene having a spiral structure, and includes a coating insulating block and a conductive block. The coating insulating block has a polyacetylene unit structure having alkyl chains at its side chains through functional groups, the alkyl chains being arranged in a direction parallel to the major axis of the main chain. The conductive block has a polyacetylene unit structure having hydrogen atoms at its side chains through functional groups, the hydrogen atoms being arranged in a direction parallel to the major axis of the main chain. The device has the above-mentioned block polymer, and two or more electrodes. | 06-25-2009 |
20090179197 | DEVICE - A device is provided by use of a helical substituted polyacetylene. The device comprises a structure comprised of a helical substituted polyacetylene having a helical main chain, and a pair of electrodes for applying a voltage or electric current to the structure, wherein the molecule of the helical substituted polyacetylene has a length larger than the distance between the pair of the electrodes. | 07-16-2009 |
20100286335 | BLOCK POLYMER AND DEVICE - The invention provides a block polymer capable of being used as a molecular wire facilitating injection of carriers between itself and an electrode, and a device in which electrodes are bridged by one molecule. The block polymer has a main chain composed of polyacetylene having a spiral structure, and includes a coating insulating block and a conductive block. The coating insulating block has a polyacetylene unit structure having alkyl chains at its side chains through functional groups, the alkyl chains being arranged in a direction parallel to the major axis of the main chain. The conductive block has a polyacetylene unit structure having hydrogen atoms at its side chains through functional groups, the hydrogen atoms being arranged in a direction parallel to the major axis of the main chain. The device has the above-mentioned block polymer, and two or more electrodes. | 11-11-2010 |
20100286336 | BLOCK POLYMER - The invention provides a novel block polymer applicable to a light-emitting device. The block polymer has an electron-transporting block and a hole-transporting block, wherein the main chain backbone of the block polymer is polyacetylene. | 11-11-2010 |
20120118498 | METHOD AND APPARATUS FOR FORMING A CONTINUOUS ORIENTED STRUCTURE OF A POLYMER - A method and an apparatus for easily making a continuous oriented structure of a polymer are provided. In making a polymer assembly, single crystals are bonded to each other, an external force, such as an electrical field or a magnetic field, is applied to the single crystals, or a solution of the polymer is applied on a substrate such that the applied solution is linear in shape. | 05-17-2012 |
Patent application number | Description | Published |
20090039337 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element stores information by changing an electrical characteristic of the storage layer, wherein at least Zr is added to the ion source layer as a metal element together with an ion conducting material. | 02-12-2009 |
20120147656 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device having the stable switching characteristics with the characteristics of data retention remaining favorable are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes an ion source layer provided on the second electrode side, a resistance change layer provided between the ion source layer and the first electrode, and a barrier layer provided between the resistance change layer and the first electrode, and having conductivity higher than that of the resistance change layer. | 06-14-2012 |
20120236625 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved writing and erasing characteristics during operations at a low voltage and a low current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer, and the barrier layer containing a transition metal or a nitride thereof. | 09-20-2012 |
20140183437 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element with a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer. | 07-03-2014 |
Patent application number | Description | Published |
20130256622 | STORAGE DEVICE AND STORAGE UNIT - A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer includes a chalcogen element, oxygen, and one or more transition metal elements selected from the group of Groups 4, 5, and 6 elements of the Periodic Table. | 10-03-2013 |
20130334489 | STORAGE DEVICE AND STORAGE UNIT - A storage device includes: a first electrode; a storage layer including an ion source layer; and a second electrode. The first electrode, the storage layer, and the second electrode are provided in this order. The ion source layer contains a movable element, and has a volume resistivity of about 150 mΩ·cm to about 12000 mΩ·cm both inclusive. | 12-19-2013 |
20140050011 | STORAGE UNIT AND DRIVING METHOD - There is provided a storage unit including: a storage device configured to store a resistance state, the resistance state being changeable between a first state and a second state; and a driving section, when setting the resistance state to the first state, applying a first pulse having a first polarity to the storage device, the driving section, when setting the resistance state to the second state, applying a second pulse having a second polarity to the storage device, then temporarily applying a third pulse having the first polarity, and applying the second pulse again, the first polarity and the second polarity differing from each other. | 02-20-2014 |