Patent application number | Description | Published |
20100240161 | Method for fabricating nitride semiconductor light-emitting device - A method for fabricating a nitride semiconductor light-emitting device includes the steps of creating a recessed region in a nitride semiconductor substrate having a nonpolar plane or a semipolar plane, and providing a nitride semiconductor thin film including an n-type nitride semiconductor thin film, an active layer and a p-type nitride semiconductor thin film on the nitride semiconductor substrate. The p-type nitride semiconductor thin film is grown at a growth temperature higher than or equal to 700° C. and lower than 900° C. | 09-23-2010 |
20100243988 | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device - A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction. | 09-30-2010 |
20100301348 | Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip - A nitride semiconductor chip is provided that offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor chip) has an n-type GaN substrate having as a principal growth plane a plane having an off-angle in the a-axis direction relative to the m plane, and a nitride semiconductor layer formed on the principal growth plane of the n-type GaN substrate. The n-type GaN substrate includes a depressed portion (carved region), which is carved from the principal growth plane in the thickness direction, and an uncarved region, which is a region not carved. The nitride semiconductor layer formed on the n-type GaN substrate has a gradient thickness region whose thickness decreases in a gradient fashion toward the depressed portion (carved region) and an emission portion formation region whose thickness varies very little. In the emission portion formation region | 12-02-2010 |
20100316082 | NITRIDE SEMICONDUCTOR LASER CHIP - A nitride semiconductor laser chip is provided that offers sufficient reliability even at high output. The nitride semiconductor laser chip has a nitride semiconductor layer formed on a substrate, a resonator facet formed on the nitride semiconductor layer, and a coating film formed on the resonator facet and containing Ar. The coating film has, in a region contiguous with the resonator facet and in the vicinity thereof, a low-Ar region with a low Ar content and, on the side of this low-Ar region opposite from the resonator facet, a high-Ar region with a higher Ar content than the low-Ar region. | 12-16-2010 |
20110001126 | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device - A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate. | 01-06-2011 |
20110042646 | Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device - A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al. | 02-24-2011 |
20110220871 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND SEMICONDUCTOR LIGHT-EMITTING DEVICE - In a nitride semiconductor light-emitting device, a nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer are successively stacked on an n-type nitride semiconductor layer. In a semiconductor light-emitting device, a first lower layer, a second lower layer, an active layer, and an upper layer having a thickness not greater than 40 nm are successively stacked on a substrate, and an interface of a second electrode for n-type in contact with the upper layer includes a metal of which a surface plasmon can be excited by light generated from the active layer. | 09-15-2011 |
Patent application number | Description | Published |
20080283866 | Nitride semiconductor light-emitting device and method for producing same - In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking. | 11-20-2008 |
20080309218 | Light emitting device and method of fabricating a light emitting device - The present invention comprises a light absorption film | 12-18-2008 |
20090026481 | Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device - A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided. | 01-29-2009 |
20090236585 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF FABRICATING IT, AND SEMICONDUCTOR OPTICAL APPARATUS - A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region | 09-24-2009 |
20100150199 | Nitride semiconductor light-emitting device - A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield. | 06-17-2010 |
20100244046 | NITRIDE SEMICONDUCTOR DEVICE - On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less. | 09-30-2010 |
20110136276 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATION THEREOF - A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate ( | 06-09-2011 |
20120015465 | Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device - Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal. | 01-19-2012 |
Patent application number | Description | Published |
20090010293 | Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device - A nitride semiconductor light emitting device includes an n-type GaN substrate ( | 01-08-2009 |
20090116528 | Nitride semiconductor laser device - A nitride semiconductor laser device has a multilayer structure formed by stacking a plurality of nitride semiconductor layers made of hexagonal nitride semiconductors, while the multilayer structure is provided with a waveguide structure for guiding a laser beam, the nitride semiconductor layers forming the multilayer structure are stacked in a direction substantially perpendicular to the c-axes of the hexagonal nitride semiconductors constituting the nitride semiconductor layers, a first cavity facet forming a side surface of the waveguide structure is a c-plane having Ga-polarity, a second cavity facet forming another side surface of the waveguide structure opposed to the first cavity facet is a c-plane having N-polarity, a crystalline nitrogen-containing film is formed on the surface of the first cavity facet, and the reflectance of the first cavity facet is smaller than the reflectance of the second cavity facet. | 05-07-2009 |
20090168827 | Nitride semiconductor laser chip and method of fabricating same - A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L | 07-02-2009 |
20090200573 | Light emitting element and manufacturing method thereof - In a laser chip | 08-13-2009 |
20090238229 | NITRIDE SEMICONDUCTOR LASER ELEMENT AND EXTERNAL-CAVITY SEMICONDUCTOR LASER DEVICE - Disclosed are a nitride semiconductor laser element including a light emitting portion made of a nitride semiconductor, and an external-cavity semiconductor laser device using it. In the nitride semiconductor laser element, a coat film made of silicon oxynitride is formed on the light emitting portion, and the reflectance of the coat film to feedback light of laser light emitted from the light emitting portion is 0.5% or less. | 09-24-2009 |
Patent application number | Description | Published |
20130038938 | OPTICAL COMPONENT AND OPTICAL MODULE - An optical component emits or transmits laser light of a wavelength of 460 nm or less, and a first coating formed from a dielectric film is applied upon at least a part of the surface thereof, and a second coating B formed from a dielectric film containing a noble metal or platinum group element is applied upon the first coating. | 02-14-2013 |
20130043499 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device (A) having a simple configuration whereby it is possible to easily and accurately confirm whether or not ultraviolet light is being emitted, the semiconductor light-emitting device comprising: a semiconductor light-emitting element ( | 02-21-2013 |
20130161640 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction <0001>. This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained. | 06-27-2013 |
20140353704 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member. | 12-04-2014 |
20140353705 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE AND SUBSTRATE - A semiconductor light emitting element includes a transparent substrate that transmits light emitted from said semiconductor light emitting element and a multi-layered structure formed on the transparent substrate. The multi-layered structure includes a semiconductor multi-layered film consisting of an n-type layer, an MQW light emitting layer and a p-type layer. The transparent substrate includes a light scattering structure formed in the transparent substrate for scattering the light that entered the substrate. | 12-04-2014 |
20150029725 | LIGHT EMITTING DEVICE, ILLUMINATING DEVICE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element, a ceramic substrate including a mounting surface on which the light emitting element is mounted, and a non-mounting surface opposite to the mounting surface and on which the light emitting element is not mounted, and a metal reflection film formed on the non-mounting surface. The metal reflection film reflects light from light emitting element that has passed through the ceramic substrate. | 01-29-2015 |