Patent application number | Description | Published |
20080237787 | SEMICONDUCTOR INTEGRATED CIRCUIT - The present invention aims at offering the semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. | 10-02-2008 |
20100178752 | SEMICONDUCTOR DEVICE AND FUSE BLOWOUT METHOD - A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse. | 07-15-2010 |
20100264514 | SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE - Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers. | 10-21-2010 |
20100320562 | SEMICONDUCTOR DEVICE - The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. | 12-23-2010 |
20110006392 | SEMICONDUCTOR DEVICE - The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. | 01-13-2011 |
20140021559 | SEMICONDUCTOR DEVICE AND A METHOD OF INCREASING A RESISTANCE VALUE OF AN ELECTRIC FUSE - Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers. | 01-23-2014 |
20150303144 | Semiconductor Device and A Method Increasing a Resistance Value of an Electric Fuse - A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers. | 10-22-2015 |