Patent application number | Description | Published |
20110215323 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 09-08-2011 |
20110215861 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device includes a photodiode, a first transistor, a second transistor, and a third transistor. The second transistor and the third transistor have a function of retaining a charge accumulated in a gate of the first transistor. In a period during which the second transistor and the third transistor are off, a voltage level of a voltage applied to a gate of the second transistor is set to be lower than a voltage level of a source of the second transistor and a voltage level of a drain of the second transistor, and a voltage level of a voltage applied to a gate of the third transistor is set to be lower than a voltage level of a source of the third transistor and a voltage level of a drain of the third transistor. | 09-08-2011 |
20110255046 | DISPLAY DEVICE AND ELECTRONIC BOOK - It is an object to provide a display device exhibiting high visibility and having a touch recognition function. The display device includes a display portion and a sensor portion. The display portion includes a first liquid crystal element including a polymer-scattered liquid crystal. The sensor portion includes a light-receiving element and a second liquid crystal element including a polymer-dispersed liquid crystal provided over the light-receiving element. The first liquid crystal element and the second liquid crystal element are driven independently from each other. The light-receiving element receives light transmitting through the second liquid crystal element. | 10-20-2011 |
20120002090 | SOLID-STATE IMAGING DEVICE AND SEMICONDUCTOR DISPLAY DEVICE - An object is to provide a solid-state imaging device or a semiconductor display device with which a high-quality image can be taken. By performing operation using a global shutter method, a potential for controlling charge accumulation operation can be shared by all pixels. In addition, a first photosensor group includes a plurality of photosensors connected to a wiring supplied with an output signal, and a second photosensor group includes a plurality of photosensors connected to another wiring supplied with the output signal. A wiring for supplying a potential or a signal for controlling charge accumulation operation to the first photosensor group is connected to a wiring for supplying the potential or signal to the second photosensor group. | 01-05-2012 |
20120056252 | ELECTRONIC DEVICE - An object is to provide a pixel structure of a display device including a photosensor which prevents changes in an output of the photosensor and a decrease in imaging quality. The display device has a pixel layout structure in which a shielding wire is disposed between an FD and an imaging signal line (a PR line, a TX line, or an SE line) or between the FD and an image-display signal line in order to reduce or eliminate parasitic capacitance between the FD and a signal line for the purpose of suppressing changes in the potential of the FD. An imaging power supply line, image-display power supply line, a GND line, a common line, or the like whose potential is fixed, such as a common potential line, is used as a shielding wire. | 03-08-2012 |
20120132791 | METHOD FOR DRIVING PHOTOSENSOR, METHOD FOR DRIVING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - This invention has for purpose to provide a photosensor that is small in size and can obtain high-contrast image data and to provide a semiconductor device including the photosensor. In the photosensor including a light-receiving element, a transistor serving as a switching element, and a charge retention node electrically connected to the light-receiving element through the transistor, the reduction in charge held in the charge retention node is suppressed by extending the fall time of the input waveform of a driving pulse supplied to the transistor to turn off the transistor. | 05-31-2012 |
20120154337 | Semiconductor Device and Driving Method Thereof - A semiconductor device with high definition, which includes a plurality of sets each including a photosensor and a display element including a light-emitting element arranged in a matrix is provided, wherein a power supply line electrically connected to the display element also serves as a power supply line electrically connected to the photosensor. Thus, the semiconductor device with high definition can be provided without decreasing the width of each power supply line. Thus, the definition of the semiconductor device can be improved while securing the stability of the potential of the power supply line. The stability of the potential of the power supply line leads to the stability of the driving voltage of the display element and the stability of the driving voltage of the photosensor. Accordingly, the semiconductor device with high definition, high display quality, and high accuracy of imaging or detection of an object can be provided. | 06-21-2012 |
20120217515 | DISPLAY DEVICE - A display device includes a pixel area including pixels arranged in a matrix and having a horizontal resolution of 350 ppi or more and a color filter layer overlapping with the pixel area. The pixels each include a first transistor whose gate is electrically connected to a scan line and whose one of a source and a drain is electrically connected to a signal line; a second transistor whose gate is electrically connected to the other of the source and the drain of the first transistor and whose one of a source and a drain is electrically connected to a current-supplying line; and a light-emitting element electrically connected to the other of the source and the drain of the second transistor. The first and second transistors each have a channel formation region including a single crystal semiconductor. | 08-30-2012 |
20130222584 | IMAGE SENSOR, CAMERA, SURVEILLANCE SYSTEM, AND METHOD FOR DRIVING THE IMAGE SENSOR - Provided is an image sensor having a pixel includes a photoelectric conversion element; a capacitor which is connected between the photoelectric conversion element; a reset circuit which resets a potential of a node between the photoelectric conversion element and the capacitor; an amplifier circuit which outputs a signal corresponding to the potential of the node; and a switch which controls electrical conduction between the amplifier circuit and a vertical signal line. When the node is brought into an electrically floating state, the potential of the optical signal is stored in the node in a state of being inverted. When an optical signal is detected while the potential is stored in the node, the potential of the node increases in accordance with an output potential of the photoelectric conversion element, and thus the potential of the node corresponds to a difference in potential between the optical signals in different light-receiving periods. | 08-29-2013 |
20130299888 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion. | 11-14-2013 |
20130321366 | SEMICONDUCTOR DEVICE AND METHOD OF DRIVING THE SAME - To reduce the effect of external light and to improve the accuracy of detecting the location of a touch. In an image-capture period, light emission from a self-light-emitting element is controlled, and imaging data at the time of displaying white on a display screen and imaging data at the time of displaying black on the display screen are output from each sensor pixel. The location of a sensor pixel where a difference between the two pieces of imaging data output from the same sensor pixel is the greatest is detected. Thus, the location of a touch of the object on the display screen is detected with high accuracy. By utilizing a difference between imaging data at the time of reverse display, the effect of external light can be reduced. | 12-05-2013 |
20140126271 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - To provide a semiconductor device in which power consumption can be reduced and operation delay due to a stop and a restart of supply of power supply voltage can be suppressed and a driving method thereof. A potential corresponding to data held in a period during which power supply voltage is continuously supplied is saved to a node connected to a capacitor before the supply of power supply voltage is stopped. By utilizing change of channel resistance of a transistor whose gate is the node, data is loaded when the supply of power supply voltage is restarted. | 05-08-2014 |
20140286076 | SEMICONDUCTOR DEVICE - A nonvolatile semiconductor device which can be driven at low voltage is provided. A nonvolatile semiconductor device with low power consumption is provided. A Schmitt trigger NAND circuit and a Schmitt trigger inverter are included. Data is held in a period when the supply of power supply voltage is continued, and a potential corresponding to the data is stored at a node electrically connected to a capacitor before a period when the supply of power supply voltage is stopped. By utilizing a change in channel resistance of a transistor whose gate is connected to the node, the data is restored in response to the restart of the supply of power supply voltage. | 09-25-2014 |
20140368235 | PROGRAMMABLE LOGIC DEVICE - Data of a register in a programmable logic element is retained. A volatile storage circuit and a nonvolatile storage circuit are provided in a register of a programmable logic element whose function can be changed in response to a plurality of context signals. The nonvolatile storage circuit includes nonvolatile storage portions for storing data in the register. The number of nonvolatile storage portions corresponds to the number of context signals. With such a structure, the function can be changed each time context signals are switched and data in the register that is changed when the function is changed can be backed up to the nonvolatile storage portion in each function. In addition, the function can be changed each time context signals are switched and the data in the register that is backed up when the function is changed can be recovered to the volatile storage circuit. | 12-18-2014 |
20150060978 | SEMICONDUCTOR DEVICE - To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to each other in the bit line direction is connected to a bit line through a common contact hole. The pair of memory cells adjacent to each other in the bit line direction shares an electrode connected to the bit line. An oxide semiconductor layer included in the memory cell is provided to overlap with a word line and a capacitor line. A transistor and a capacitor included in the memory cell are each provided to overlap with the bit line connected to the memory cell. | 03-05-2015 |