Patent application number | Description | Published |
20080273289 | Film capacitor and method of manufacturing same - A film capacitor suited to car-mount application, excellent in heat cycle tolerance and humidity resistance, and high in productivity, while maintaining low heat generation and low inductance characteristic is provided. The film capacitor comprises a film capacitor element, a bus bar as metal terminal connected to electrode of this film capacitor element, and a case for containing them, in which the film capacitor element and bus bar are packed within the case by plural layers of epoxy resin compositions, and the plural layers of epoxy resin compositions are composed so that the coefficient of linear expansion is smallest in the composition disposed in the uppermost layer. | 11-06-2008 |
20080310075 | Metalized Film Capacitor, Case Mold Type Capacitor Using the Same, Inverter Circuit, and Vehicle Drive Motor Drive Circuit - A metalized film capacitor capable of exhibiting stable performance in a wide temperature range is provided. The metalized film capacitor has an elliptical cross sectional shape having a major axis of 60 mm or above. In this capacitor, offset for shifting in the width direction of a pair of metalized film is set to 1.2 mm or above. Since the bonding state between metal vapor-deposited electrode and metal sprayed electrode formed on the end surface is stable, a stable contact between metal sprayed electrode and dielectric film is maintained, thereby preferably maintaining tan σ and exhibiting excellent performance even if the use temperature range is increased and the thermal stress is increased. | 12-18-2008 |
20100091425 | ELECTRONIC COMPONENT AND METHOD FOR PRODUCING THE SAME - The present invention provides an electronic component which can reduce the size of a capacitor and the number of constitutional parts of the capacitor without using a case. The electronic component of the present invention includes a capacitor element, an outer package made of a norbornene resin covering the capacitor element, and external connection terminal portions electrically connected to the capacitor element and protruded from the outer package. | 04-15-2010 |
20100226065 | METALLIZATION FILM CAPACITOR - A metallization film capacitor that achieves both high heat resistance and high withstand voltage at the same time. A metal-deposited electrode is formed on a PEN film in each of a pair of metalized films. These metalized films are wound such that the metal-deposited electrodes face each other via the dielectric film in between. A metalized contact electrode is formed on both end faces of these wound metalized films to configure the metallization film capacitor. A divisional electrode is provided on the metal-deposited electrode. In addition, a fuse is coupled to this divisional electrode for providing a self-maintaining function. Pass rate a/b of a deposition pattern is set to 4.0 or smaller, where ‘a’ is the fuse width, and ‘b’ is the length of the divisional electrode in a lengthwise direction of the metalized films. | 09-09-2010 |
Patent application number | Description | Published |
20090278210 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode. | 11-12-2009 |
20090298255 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode. | 12-03-2009 |
20110006374 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING A SRAM SECTION AND A LOGIC CIRCUIT SECTION - A semiconductor device including a SRAM section and a logic circuit section includes: a first n-type MIS transistor including a first n-type gate electrode formed with a first gate insulating film interposed on a first element formation region of a semiconductor substrate in the SRAM section; and a second n-type MIS transistor including a second n-type gate electrode formed with a second gate insulating film interposed on a second element formation region of the semiconductor substrate in the logic circuit section. A first impurity concentration of a first n-type impurity in the first n-type gate electrode is lower than a second impurity concentration of a second n-type impurity in the second n-type gate electrode. | 01-13-2011 |
20110147857 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode. | 06-23-2011 |
20120273903 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating film; and an insulating sidewall formed on each side surface of the gate electrode. The high dielectric constant gate insulating film is continuously formed so as to extend from under the gate electrode to under the insulating sidewall. At least part of the high dielectric constant gate insulating film located under the insulating sidewall has a smaller thickness than a thickness of part of the high dielectric constant gate insulating film located under the gate electrode. | 11-01-2012 |