Patent application number | Description | Published |
20080303054 | APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF PRODUCING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE THEREOF, AND LAMP THEREOF - An apparatus for producing a group-III nitride semiconductor layer which forms a group-III nitride semiconductor layer on a substrate by a sputtering method, the apparatus including: a first plasma-generating region where a target containing a group-III element is disposed and the target is sputtered to generate material particles formed of a material contained in the target; and a second plasma generating region where the substrate is disposed and nitrogen-containing plasma is generated. The first plasma-generating region and the second plasma-generating region are provided inside a chamber, and the first plasma-generating region and the second plasma-generating region are separated by a shielding wall which has an opening part from which the material particles are supplied onto the substrate. Also disclosed are a method of producing a group-III nitride semiconductor layer, a method of producing a group-III nitride semiconductor light-emitting device, and a lamp thereof. | 12-11-2008 |
20090114942 | APPARATUS FOR MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LAYER, GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - The present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer having high crystallinity. An embodiment of the present invention provides an apparatus for manufacturing a group-III nitride semiconductor layer on a substrate | 05-07-2009 |
20090283795 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LAMP - Provided is a method for producing a group III nitride semiconductor light emitting device capable of producing a group III nitride semiconductor light emitting device with excellent light emitting properties with excellent productivity; a group III nitride semiconductor light emitting device; and a lamp. | 11-19-2009 |
20120012889 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element ( | 01-19-2012 |
20120138999 | SEMICONDUCTOR LIGHT- EMITTING ELEMENT, SEMICONDUCTOR LIGHT- EMITTING DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT- EMITTING ELEMENT, METHOD FOR PRODUCING SEMICONDUCTOR LIGHT- EMITTING DEVICE, ILLUMINATION DEVICE USING SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND ELECTRONIC APPARATUS - The disclosed semiconductor light-emitting element is configured from layering an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer ( | 06-07-2012 |
20120235204 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE USING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ELECTRONIC APPARATUS - Disclosed is a semiconductor light emitting element ( | 09-20-2012 |
20120241721 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, ELECTRONIC APPARATUS, AND LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting element ( | 09-27-2012 |
20120241760 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting element ( | 09-27-2012 |
20120261678 | METHOD FOR PRODUCING SEMICONDUCTOR LIGHT-EMITTING CHIP AND SEMICONDUCTOR LIGHT-EMITTING CHIP - In producing a semiconductor light-emitting chip whose substrate is composed of a sapphire single crystal, cracking in semiconductor light-emitting elements in the obtained semiconductor light-emitting chip is suppressed. A semiconductor light-emitting chip is obtained by forming, on an element-group formation substrate on a front surface of which semiconductor light-emitting elements are formed, the front surface being composed of a C-plane of a sapphire single crystal, dividing grooves extending toward a first direction along an M-plane of the sapphire single crystal and the front surface of the substrate from a substrate front surface side (step | 10-18-2012 |
20120267673 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ELECTRODE STRUCTURE AND LIGHT-EMITTING DEVICE - It is an object to improve joining properties of electrodes and reliability of the electrodes for supplying electrical power to a semiconductor. The semiconductor light-emitting element includes an n-type semiconductor layer, a light-emitting layer, a p-type semiconductor layer, a transparent conductive layer, a p-electrode formed on the transparent conductive layer and an n-electrode formed on the n-type semiconductor layer. The p-electrode includes a p-side second metal layer composed of a metallic material containing Au and provided to be exposed to the outside and a p-side first metal layer composed of a metallic material containing Au with hardness higher than that of the metallic material composing the p-side second metal layer, the p-side first metal layer being provided closer to the transparent conductive layer than the p-side second metal layer along the p-side second metal layer. | 10-25-2012 |
20130037825 | SEMICONDUCTOR LIGHT EMITTING CHIP AND METHOD FOR PROCESSING SUBSTRATE - Disclosed is a semiconductor light emitting chip ( | 02-14-2013 |