Patent application number | Description | Published |
20120126227 | INTERCONNECTION STRUCTURE AND DISPLAY DEVICE INCLUDING INTERCONNECTION STRUCTURE - A novel interconnection structure which is excellent in adhesion and is capable of realizing low resistance and low contact resistance is provided. An interconnection structure including an interconnection film and a semiconductor layer of a thin film transistor above a substrate in this order from the side of a substrate, wherein the semiconductor layer is composed of an oxide semiconductor, is provided. | 05-24-2012 |
20120199866 | REFLECTIVE ANODE ELECTRODE FOR ORGANIC EL DISPLAY - Disclosed is a reflective anode electrode for an organic EL display, which comprises a novel Al-based alloy reflective film. The reflective anode electrode is capable of assuring low contact resistance and high reflectance even in cases where the Al reflective film is in direct contact with an oxide conductive film such as an ITO or IZO film. In addition, when the Al reflective film is formed into a laminated structure together with the oxide conductive film, the work function of the surface of the upper oxide conductive film is equally high with the work function of a laminated structure that is composed of a general-purpose Ag-based alloy film and an oxide conductive film. Specifically disclosed is a reflective anode electrode for an organic EL display, which is formed on a substrate and characterized by comprising a laminated structure that is composed of an Al-based alloy film containing 0.1-6% by atom of Ag and an oxide conductive film that is formed on the Al-based alloy film so as to be in direct contact with the Al-based alloy film. | 08-09-2012 |
20130009111 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, SPUTTERING TARGET, AND THIN FILM TRANSISTOR - Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W. | 01-10-2013 |
20130181218 | WIRING STRUCTURE AND DISPLAY DEVICE - An interconnection structure includes a semiconductor layer of a thin-film transistor and a metal interconnection film above a substrate in this order from a side of the substrate, and includes a barrier layer between the semiconductor layer and the metal interconnection film. The semiconductor layer is composed of an oxide semiconductor. The barrier layer is composed of a Ti oxide film containing TiOx (where x is from 1.0 to 2.0), and the Ti oxide film is directly connected to the semiconductor layer. The oxide semiconductor is composed of an oxide containing at least one element selected from the group consisting of In, Ga, Zn and Sn. | 07-18-2013 |
20130228926 | INTERCONNECTION STRUCTURE - Provided is an interconnection structure that, in a display device such as an organic EL display or a liquid crystal display, has superior workability during wet etching even without providing an etch stop layer. The interconnection structure has, in the given order, a substrate, a semiconductor layer of a thin film transistor, and a metal interconnection film, and has a barrier layer between the semiconductor layer and the metal interconnection film. The semiconductor layer comprises an oxide semiconductor, the barrier layer has a layered structure of a high-melting-point metal thin film and a Si thin film, and the Si thin film is directly connected to the semiconductor layer. | 09-05-2013 |
20140054588 | THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE - There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays depositing and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer. | 02-27-2014 |
20140151886 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT - Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the contact resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion barrier layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion barrier layer is 4 at % or more. | 06-05-2014 |
20140319512 | THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE - There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains Sn and at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer. | 10-30-2014 |