| Patent application number | Description | Published |
|---|
| 20100001348 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film. | 01-07-2010 |
| 20100173465 | SEMICONDUCTOR DEVICE HAVING SILICIDE TRANSISTORS AND NON-SILICIDE TRANSISTORS FORMED ON THE SAME SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a first MIS transistor of a non-salicide structure and a second MIS transistor of a salicide structure which are both formed on a substrate of silicon. The first MIS transistor includes a first gate electrode of silicon, first sidewalls, a first source and drain, and plasma reaction films grown in a plasma atmosphere to cover the top surfaces of the first gate electrode and first source and drain, wherein the plasma reaction film prevents silicide formation on the first MIS transistor. | 07-08-2010 |
| 20110169100 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal. | 07-14-2011 |
| 20110248346 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film. | 10-13-2011 |
| 20110272815 | SEMICONDUCTOR DEVICE AND LAYOUT DESIGN METHOD FOR THE SAME - A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features. | 11-10-2011 |
| 20110284935 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof. | 11-24-2011 |
| 20120139055 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first MIS transistor and a second MIS transistor. The first MIS transistor includes a first gate insulating film which is formed on a first active region of a semiconductor substrate and has a first high dielectric constant film, and a first gate electrode formed on the first gate insulating film. The second MIS transistor includes a second gate insulating film which is formed on a second active region of the semiconductor substrate and has a second high dielectric constant film, and a second gate electrode formed on the second gate insulating film. The second high dielectric constant film contains first adjusting metal. The first high dielectric constant film has a higher nitrogen concentration than the second high dielectric constant film, and does not contain the first adjusting metal. | 06-07-2012 |
| 20120146156 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SAME - A semiconductor device includes an MIS transistor and an electric fuse. The MIS transistor includes a gate insulating film formed on the semiconductor substrate, and a gate electrode including a first polysilicon layer, a first silicide layer, and a first metal containing layer made of a metal or a conductive metallic compound. The electric fuse includes an insulating film formed on the semiconductor substrate, a second polysilicon layer formed over the insulating film, and a second silicide layer formed on the second polysilicon layer. | 06-14-2012 |
