Patent application number | Description | Published |
20080302173 | INTAKE AIR MASS FLOW MEASUREMENT DEVICE - In an intake air mass flow measurement device, for preventing clogging in a pressure intake tube due to water or the like entering the pressure intake tube in a device measuring a pressure in the intake air tube, the intake air mass flow measurement device includes a mass air flow measurement device for measuring an intake air mass flow in an intake air tube; and a pressure sensing device for sensing pressure in the intake air tube, the pressure sensing device being integrated with the mass air flow measurement device, and an aperture plane opened to the inside of a main air flow passage for detection of the pressure takes in pressure by using a gap generated between a main air flow passage constituting member and an insertion part of the mass air flow measurement device when a measurement part of the mass air flow measurement device is inserted into the main air flow passage. With this construction, it is possible to provide a structure in which water or the like can hardly clog the pressure intake port. | 12-11-2008 |
20100031737 | MASS AIR FLOW MEASUREMENT DEVICE - An arrangement of a mass intake air flow measurement device suitable for integrating a humidity sensing device as well as a temperature sensing device and a pressure sensing device is provided. A second bypass passage | 02-11-2010 |
20110072894 | Sensor Structure - The present invention utilizes self-heating of electronic components to improve a humidity sensing part with low environment resistance, such as a condensation problem and the like, and also to enhance the heat radiation efficiency of electronic components. The humidity sensing part is used in an intake tube of an automobile by integrating, for example, with a heating resister type mass air flow measurement device. A humidity sensing element is mounted on an electronic circuit board in a mass air flow measurement device with the temperature thereof starting to increase immediately after a sensor has been actuated. This urges the temperature of the humidity sensing element to start increasing (being heated) immediately after the sensor has been actuated. To urge the humidity sensing element to be further heated, a base plate is composed of two types of materials, resin and metal. A part of the base plate holding an area of the electronic circuit board generating a large quantity of heat is composed of the metal. A part of the base plate corresponding to the periphery of the humidity sensing part which is to be heated is composed of the resin. | 03-31-2011 |
20120079879 | Mass Air Flow Measurement Device - An arrangement of a mass intake air flow measurement device suitable for integrating a humidity sensing device as well as a temperature sensing device and a pressure sensing device is provided. A second bypass passage | 04-05-2012 |
20120085324 | Sensor Structure - A sensor structure capable of achieving both resistance to pollution and measurement performance such as humidity responsiveness is disclosed as is a multifunction sensor capable of facilitating integration of detecting devices for various physical quantities. The sensor structure includes a housing including a connector that mediates an input/output exchange with an outside and a terminal of the connector; and an electronic circuit board that is mounted inside of the housing and includes a humidity sensing element, the terminal of the connector and the electronic circuit board being electrically connected to each other, the sensor structure being inserted to be attached to an airflow tube through which a main air flows, via a seal material provided in the housing. The housing includes a plurality of bypass channels that each communicate an inside of the housing with an inside of the airflow tube. | 04-12-2012 |
20120198925 | Sensor Structure - In relation to a humidity sensor sensitive to water and contamination, a sensor implementation structure that achieves both protection performance against water and contaminants and measurement performance such as humidity responsiveness is provided. A sensor structure has a mass airflow measurement element that measures a mass airflow flowing in an intake pipe, a humidity sensing element that senses humidity of air flowing in the intake pipe, a housing structural component having a connector that carries out input/output to/from outside and a terminal component of the connector, and a bypass passage that is composed by using part of the housing structural component and takes in part of the air that flows in the intake pipe, the mass airflow measurement element being mounted in the bypass passage; wherein space is provided in the housing structural component in the vicinity of the bypass passage, the humidity sensing element is mounted in the space. | 08-09-2012 |
20120198943 | Sensor Structure - A sensor structure is provided so that a dynamic pressure effect caused by airflow is avoided as much as possible even when a mass airflow measurement device is integrated with a pressure measurement device, thereby preventing contaminated substances, water droplets, or the like from arriving at a pressure measurement part. In the sensor structure, the mass airflow measurement device is inserted into a sensor insertion port provided in an intake air tube component including an intake air tube and is fixed to the intake air tube, and a pressure measurement device is mounted in a housing structural component of the mass airflow measurement device for measuring the pressure. The pressure measurement device and the inside of the intake air tube are connected by a pressure intake port provided in the housing structural component. | 08-09-2012 |
20140283596 | Humidity Detection Device - To provide a humidity detection device by which good accuracy in measurement is achieved even under severe environmental conditions, in the humidity detection device which includes an electronic circuit board | 09-25-2014 |
20140290359 | Humidity Measurement Device - A highly sensitive humidity measurement device is provided. The humidity measurement device has: a housing component integrally including a connector for performing input/output to/from the outside and a connector terminal component; an electronic circuit board mounted on the housing component and electrically connected to the connector terminal; and a humidity sensing element provided on the electronic circuit board. When the humidity measurement device is installed in an installation hole that is provided in a part of a main air flow passage through which suction air flows, apart of the housing component is exposed to the suction air flowing through the main air flow passage. The housing component is provided with a bypass passage to suction a part of the suction air. The bypass passage includes a bypass inlet opening that serves as a suction port of the suction air and a bypass outlet opening that discharges the suction air. The bypass outlet opening is exposed to the suction air. | 10-02-2014 |
Patent application number | Description | Published |
20090039519 | SEMICONDUCTOR DEVICE, PHOTOMASK, SEMICONDUCTOR DEVICE PRODUCTION METHOD, AND PATTERN LAYOUT METHOD - A semiconductor device according to an aspect of the invention includes plural line pattern and plural pad patterns. The line patterns are repeatedly disposed with a space pattern interposed therebetween. The pad pattern straddles plural columns of the line patterns. The pad pattern is connected to the line pattern located on one side of the pad pattern in one of the plural columns, the pad pattern is connected to the line pattern located on the other side of the pad pattern in another column of the plural columns, and the line pattern located on one side of the pad pattern includes an open-circuit portion in another column. Therefore, a semiconductor device in which an interconnection pattern including the fine line-and-space-shape line pattern and the pad pattern is accurately formed at low cost, a semiconductor device production method, and a photomask used to produce the semiconductor device can be provided. | 02-12-2009 |
20090075187 | PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND EXPOSURE MASK SET - First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region. | 03-19-2009 |
20100104983 | PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND EXPOSURE MASK SET - First, a first exposure process is performed using dipole illumination with only a grating-pattern forming region as a substantial object to be exposed. Next, a second exposure process is performed with only a standard-pattern forming region as a substantial object to be exposed. A development process is then performed to obtain a resist pattern. A mask for the first exposure process is such that a light blocking pattern is formed on the whole surface of a standard-pattern mask part corresponding to the standard-pattern forming region. A mask for the second exposure is such that a light blocking pattern is formed on the whole surface of a grating-pattern mask part corresponding to the grating-pattern forming region. | 04-29-2010 |
20100325913 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method dose not use or only use the least possible amount of an organic solvent, and can quickly and completely remove a liquid from a wet substrate surface without allowing the liquid to remain on the substrate surface. The substrate processing method for drying a substrate surface which is wet with a liquid, includes: removing the liquid from the substrate surface and sucking the liquid together with its surrounding gas into a gas/liquid suction nozzle, disposed opposite the substrate surface, while relatively moving the gas/liquid suction nozzle and the substrate parallel to each other; and blowing a dry gas from a dry gas supply nozzle, disposed opposite the substrate surface, toward that area of the substrate surface from which the liquid has been removed while relatively moving the dry gas supply nozzle and the substrate parallel to each other. | 12-30-2010 |
Patent application number | Description | Published |
20080314763 | Method and device for regenerating ion exchanger, and electrolytic processing apparatus - A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode. | 12-25-2008 |
20090139541 | Gas dissolved water producing apparatus and method thereof and ultrasonic cleaning equipment and method thereof - A gas dissolved water producing apparatus includes a gas dissolving section, a gas channel for guiding a gas into the dissolving section, a first water channel for guiding water into the dissolving section, a gas dissolved water discharge channel, and a second water channel for guiding the water without passing through the dissolving section. The second water channel joins the gas dissolved water discharge channel to control the solution gas dissolved in the gas dissolved water can be controlled to a prescribed level of concentration. | 06-04-2009 |
20100294535 | LIGHT-TRANSMITTING CONDUCTIVE FILM, DISPLAY DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-TRANSMITTING CONDUCTIVE FILM - An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film. | 11-25-2010 |
20130234309 | SEMICONDUCTOR DEVICE - Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads. | 09-12-2013 |
20140183734 | SEMICONDUCTOR DEVICE - Technique capable of achieving reliability improvement of a semiconductor device even if temperature rising of an operation guarantee temperature of the semiconductor device is performed is provided. Gap portions are provided among a plurality of pads, and a glass coat composed of, for example, a silicon oxide film or a silicon nitride film is embedded in the gap portions. The glass coat is provided in order to secure electrical insulation among the pads, and coats outer edge portions of the pads. Trenches are formed so as to be adjacent to regions, which are coated with the glass coat, of the outer edge portions of the pads. | 07-03-2014 |
Patent application number | Description | Published |
20110193079 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film. | 08-11-2011 |
20120223305 | SEMICONDUCTOR DEVICE - Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor. | 09-06-2012 |
20150091001 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a miniaturized transistor, a gate insulating layer is required to reduce its thickness; however, in the case where the gate insulating layer is a single layer of a silicon oxide film, a physical limit on thinning of the gate insulating layer might occur due to an increase in tunneling current, i.e. gate leakage current. With the use of a high-k film whose relative permittivity is higher than or equal to 10 is used for the gate insulating layer, gate leakage current of the miniaturized transistor is reduced. With the use of the high-k film as a first insulating layer whose relative permittivity is higher than that of a second insulating layer in contact with an oxide semiconductor layer, the thickness of the gate insulating layer can be thinner than a thickness of a gate insulating layer considered in terms of a silicon oxide film. | 04-02-2015 |