Patent application number | Description | Published |
20080271667 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-06-2008 |
20080272392 | Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-06-2008 |
20080296738 | GaAs semiconductor substrate and fabrication method thereof - A GaAs semiconductor substrate includes a surface layer. When an atomic ratio is to be calculated using a 3d electron spectrum of Ga atoms and As atoms measured at the condition of 10° for the photoelectron take-off angle θ by X-ray photoelectron spectroscopy, the structural atomic ratio of all Ga atoms to all As atoms (Ga)/(As) at the surface layer is at least 0.5 and not more than 0.9, the ratio of As atoms bound with O atoms to all Ga atoms and all As atoms (As—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35, and the ratio of Ga atoms bound with O atoms to all Ga atoms and all As atoms (Ga—O)/{(Ga)+(As)} at the surface layer is at least 0.15 and not more than 0.35. Accordingly, there is provided a GaAs semiconductor substrate having a surface cleaned to an extent allowing removal of impurities and oxides at the surface by at least thermal cleaning of the substrate. | 12-04-2008 |
20080299350 | Method of Polishing Compound Semiconductor Substrate, Compound Semiconductor Substrate, Method of Manufacturing Compound Semiconductor Epitaxial Substrate, and Compound Semiconductor Epitaxial Substrate - Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A compound semiconductor-substrate polishing method includes a preparation step (S | 12-04-2008 |
20090140390 | GaAs SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND GROUP III-V COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A GaAs semiconductor substrate includes a main surface ( | 06-04-2009 |
20090159845 | POLISHING SLURRY, METHOD OF TREATING SURFACE OF GAXIN1-XASYP1-Y CRYSTAL AND GAXIN1-XASYP1-Y CRYSTAL SUBSTRATE - The present polishing slurry is a polishing slurry for chemically mechanically polishing a surface of a Ga | 06-25-2009 |
20090249747 | Method of Packaging Compound Semiconductor Substrates - Affords a compound semiconductor substrate packaging method for preventing oxidation of the surface of compound semiconductor substrates. The compound semiconductor substrate packaging method provides: a first step of inserting a compound semiconductor substrate ( | 10-08-2009 |
20090291567 | NITRIDE-BASED COMPOUND SEMICONDUCTOR, METHOD OF CLEANING A COMPOUND SEMICONDUCTOR, METHOD OF PRODUCING THE SAME, AND SUBSTRATE - There is provided a cleaning method and production method that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. A method of cleaning a nitride-based compound semiconductor in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, a cleaning liquid having a pH of 7.1 or higher is used to clean the nitride-based compound semiconductor. | 11-26-2009 |
20100068834 | DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE - A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement. | 03-18-2010 |
20100123168 | NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 05-20-2010 |
20100227532 | METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE - A method of surface treatment of a Group III nitride crystal film includes polishing a surface of the Group III nitride crystal film, wherein a pH value x and an oxidation-reduction potential value y (mV) of a polishing liquid used for the polishing satisfy both relationships of y≧−50x+1,000 and y≦−50x+1,900. | 09-09-2010 |
20100248478 | METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE - There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains. | 09-30-2010 |
20110018105 | NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR DEVICE, AND METHOD OF PRODUCING THE DEVICES - There is provided a method of producing a nitride-based compound semiconductor device that suppresses the adhesion of foreign matters including impurity, fine particles and the like on a surface of a compound semiconductor. The method of producing a nitride-based compound semiconductor device in accordance with the present invention includes the steps of: preparing a nitride-based compound semiconductor (or a substrate preparation step); and cleaning. In the step of cleaning, the nitride-based compound semiconductor is cleaned with a cleaning liquid having a pH of 7.1 or higher ultrasonically. | 01-27-2011 |
20120100643 | DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBER, AND GALLIUM NITRIDE COMPOUND SEMICONDUCTOR MEMBRANE - A method of evaluating damage of a compound semiconductor member, comprising: a step of performing spectroscopic ellipsometry measurement on a surface of the compound semiconductor member; and a step of evaluating damage on the surface of the compound semiconductor member, using a spectrum in a wavelength band containing a wavelength corresponding to a bandgap of the compound semiconductor member, in a spectrum of an optical constant obtained by the spectroscopic ellipsometry measurement. | 04-26-2012 |
20120164833 | Polishing Agent, Compound Semiconductor Manufacturing Method, and Semiconductor Device Manufacturing Method - Afforded are a polishing agent, and a compound semiconductor manufacturing method and semiconductor device manufacturing method utilizing the agent, whereby the surface quality of compound semiconductor substrates can be favorably maintained, and high polishing rates can be sustained as well. The polishing agent is a polishing agent for Ga | 06-28-2012 |
20120292747 | COMPOUND SEMICONDUCTOR SUBSTRATE - An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×10 | 11-22-2012 |
20130075867 | METHOD OF PROCESSING A SURFACE OF GROUP III NITRIDE CRYSTAL AND GROUP III NITRIDE CRYSTAL SUBSTRATE - There is provided a method of processing a surface of a group III nitride crystal, that includes the steps of: polishing a surface of a group III nitride crystal with a polishing slurry containing abrasive grains; and thereafter polishing the surface of the group III nitride crystal with a polishing liquid at least once, and each step of polishing with the polishing liquid employs a basic polishing liquid or an acidic polishing liquid as the polishing liquid. The step of polishing with the basic or acidic polishing liquid allows removal of impurity such as abrasive grains remaining on the surface of the group III nitride crystal after it is polished with the slurry containing the abrasive grains. | 03-28-2013 |
20130292802 | NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d | 11-07-2013 |
20140124826 | METHOD OF SURFACE TREATMENT OF GROUP III NITRIDE CRYSTAL FILM, GROUP III NITRIDE CRYSTAL SUBSTRATE, GROUP III NITRIDE CRYSTAL SUBSTRATE WITH EPITAXIAL LAYER, AND SEMICONDUCTOR DEVICE - A Group III nitride crystal substrate is provided for growing an epitaxial layer in which the Group III nitride crystal substrate is used for growing an epitaxial layer on the Group III nitride crystal substrate. The Group III nitride crystal substrate has a surface roughness Ra of 0.5 nm or less and an affected layer in which crystal lattices are out of order and has a thickness of 50 nm or less. The Group III nitride crystal substrate either has a principal plane parallel to any plane of A-plane and M-plane in the wurtzite structure or has an off-angle formed by the principal plane of the Group III nitride crystal substrate and any plane of A-plane and M-plane in the wurtzite structure being 0.05° to 15°. | 05-08-2014 |