Patent application number | Description | Published |
20100009469 | PLASMA DOPING METHOD AND APPARATUS - During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate. | 01-14-2010 |
20100095889 | PLASMA DOPING APPARATUS - There are installed, on a surface of an window on a vacuum chamber side, an insulating side face portion, which extends radially from the center of a generating unit of a plasma generating device and is disposed so as to be orthogonal to a substrate mounting face of an electrode, and a conductive layer, which is made of a material identical to that for the substrate and placed in an area corresponding to the generating unit on the surface of the window on the vacuum chamber side. | 04-22-2010 |
20110049628 | SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING THE SAME, AND PLASMA DOPING SYSTEM - A fin-semiconductor region ( | 03-03-2011 |
20110057326 | METHOD FOR FORMING THROUGH ELECTRODE AND SEMICONDUCTOR DEVICE - An electrode on a first surface of a semiconductor substrate and a second surface of the semiconductor substrate are connected with each other by a through electrode. A through hole is formed through the semiconductor substrate from the second surface of the semiconductor substrate to an interlayer insulating film on the first surface, and an insulating film is formed on a side surface and a bottom surface of the through hole as well as on the second surface of the semiconductor substrate, so that by simultaneously etching the insulating film on the bottom surface of the through hole and the interlayer insulating film, thus formed, the through hole is formed so as to reach the electrode on the first surface of the semiconductor substrate. | 03-10-2011 |
20110266646 | SEMICONDUCTOR DEVICE - A digital circuit portion ( | 11-03-2011 |
20120104563 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion. | 05-03-2012 |
20120115323 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A base conductive member is formed on a surface and in a hole section of a substrate, and a resist is formed on a part of the base conductive member in which a conductive layer is not to be formed. The conductive layer is formed on a part except for the part in which the resist has been formed, and a mask metal is formed on the conductive layer. Then, the resist is removed, and the base conductive member is etched using the mask metal as a mask to form the conductive layer into a predetermined shape. | 05-10-2012 |
20120119384 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device having a through-hole electrode and a manufacturing method thereof, a dummy groove hole portion for forming insulating portion insulating wirings from each other is provided, to surround a rewiring layer including a through-hole electrode on a back surface of a semiconductor substrate. This allows the wirings to be insulated from each other just by removing the metal layer existing at a bottom portion of the dummy groove hole portion. Thus, a reduction in the processing time can be realized. | 05-17-2012 |