Patent application number | Description | Published |
20080217684 | Semiconductor device and manufacturing method thereof and power supply apparatus using the same - A semiconductor device comprises a trench-gate type field-effect transistor on a semiconductor substrate having a first main surface and a second main surface oppositely positioned in a thickness direction, wherein the trench-gate type field-effect transistor comprises a first semiconductor region at the first main surface side; a second semiconductor region at the second main surface; a semiconductor well region between the first semiconductor region and the second semiconductor region; a trench formed so as to protrude in a first direction intersecting the second main surface; a gate electrode formed on an inner surface of the trench via a gate insulating film, and a bottom of the gate electrode is in the first semiconductor region, and a well bottom has a well deep portion and a well shallow portion, and the well deep portion is in a region more distant from the gate insulating film compared to the well shallow portion. | 09-11-2008 |
20080315851 | SEMICONDUCTOR DEVICE AND POWER SUPPLY USING THE SAME - A power-supply control IC is included in a switching power supply which drives to turn on and off a semiconductor switching device connected to a DC power supply in series to supply a predetermined constant voltage to an external load, and is a semiconductor device including a semiconductor circuit which controls on and off of the semiconductor switching device. When a current flowing through the load is abruptly increased to cause an error voltage to exceed a predetermined first threshold voltage after the end of a PWM on-pulse generated in synchronization with a switching cycle, a second PWM on-pulse is generated within the same switching cycle. Furthermore, in a plurality of switching cycles after the switching cycle in which the second PWM on-pulse is generated, the first threshold voltage for comparison with the error voltage is switched to a second threshold voltage higher than the first threshold voltage. | 12-25-2008 |
20090015224 | DC-DC CONVERTER, DRIVER IC, AND SYSTEM IN PACKAGE - A DC-DC converter that prevents self turn-on and improves the power efficiency is provided. In a non-insulated DC-DC converter, self turn-on is prevented by applying a negative voltage between a gate and a source of a low side MOSFET by the use of a capacitor for generating negative voltage when the low side MOSFET is in an OFF state. Also, when the low side MOSFET is in an ON state due to the capacitor for generating negative voltage, a positive voltage applied between the gate and the source of the low side MOSFET does not drop from a voltage of a gate driving DC power source that is supplied from a gate power input terminal. Therefore, the power efficiency is improved. | 01-15-2009 |
20090033377 | Drive Circuit and Inverter for Voltage Driving Type Semiconductor Device - A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply. | 02-05-2009 |
20090140327 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The vertical trench MOSFET comprises: an N type epitaxial region formed on an upper surface of an N | 06-04-2009 |
20090154209 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 06-18-2009 |
20090243575 | SEMICONDUCTOR DEVICE AND POWER SUPPLY USING THE SAME - A semiconductor device for control applied to a constant-voltage power supply device includes a digital-analog converter circuit which outputs a reference voltage corresponding to a value of a first register with taking an output voltage of a reference voltage source as a criterial reference voltage, and generates a control signal for driving a power semiconductor device based on an output voltage of an error amplifier which differentially amplifies a feedback voltage obtained by resistive-dividing on an output voltage of the constant-voltage power supply device and the reference voltage. An analog-digital converter circuit which converts the feedback voltage to a digital value with taking the output voltage of the constant-voltage power supply device as a reference voltage is provided, and based on the output, a value of a first register is corrected so as to offset an effect of an error in voltage dividing ratio of a voltage dividing resistor circuit. | 10-01-2009 |
20100001790 | SEMICONDUCTOR DEVICE - In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved. | 01-07-2010 |
20100017636 | POWER SUPPLY SYSTEM - In a power supply system having: a processor | 01-21-2010 |
20100176430 | Semiconductor Device with Reduced Parasitic Inductance - The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are | 07-15-2010 |
20100253306 | DC/DC CONVERTER - In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system. | 10-07-2010 |
20100270992 | SEMICONDUCTOR DEVICE - A semiconductor device having two semiconductor chips sealed in a sealant (2-in-1 package) is provided. A power MOSFET chip for control is disposed on an input-side plate lead portion, wherein a source electrode and a gate electrode are formed on a main surface of the chip and the source electrode is connected to an output plate lead portion. A power MOSFET chip for synchronization is disposed on an output-side plate lead portion, wherein a source electrode and a gate electrode are formed on a main surface of the chip, and the second source electrode is connected to a ground-side plate lead portion. The ground-side plate lead portion and gate-side lead portions connected to the gate electrodes, respectively, are provided between the input-side plate lead portion and the output-side plate lead portion. In this manner, heat-dissipation paths via wirings when the 2-in-1 package is mounted on a board can be wide. | 10-28-2010 |
20100321969 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 12-23-2010 |
20100327979 | Current Detection Apparatus and Control System Using the Same - A highly accurate current detection apparatus is realized in a one-chip LSI. An end of a current detector is connected to an analog power supply (VACC) or a virtual analog ground potential (VAG) of a voltage amplifier and an A/D converter, and a predetermined voltage is supplied between the voltage amplifier and the virtual ground potential (VAG) by a power supply. | 12-30-2010 |
20110115451 | DRIVING METHOD OF SWITCHING ELEMENT AND POWER SUPPLY UNIT - In a power supply unit, a main MOS and a sub MOS connected in parallel in a low-side power MOSFET section, a sensing MOS which is provided on a same semiconductor substrate with the low-side power MOSFET section, detects information corresponding to a load of the low-side power MOSFET section and is smaller in number than the transistors connected in parallel of the low-side power MOSFET section, and a control section for driving the main MOS and the sub MOS based on the information detected by the sensing MOS are provided. | 05-19-2011 |
20110181255 | SEMICONDUCTOR DEVICE AND POWER SUPPLY UNIT USING THE SAME - In a power supply unit having high-side and low-side switching elements each including power MOSFETs connected in parallel, the power MOSFETs are controlled so that the number of the transistors in an off state is increased as an output current becomes lower, and particularly, the transistors turned off when the output current is low are disposed on an outer side of a loop formed from a positive terminal of an input capacitor of a printed board to a negative terminal of the input capacitor via the switching elements. Thus, by turning off packages of the power MOSFETs disposed on an outer side of the main circuit loop and turning on packages of the power MOSFETs disposed on an inner side of the loop, the parasitic inductance of a main circuit is reduced, so that the switching loss can be reduced and efficiency in a light load can be improved. | 07-28-2011 |
20110220979 | SEMICONDUCTOR DEVICE AND MULTI-LAYERED WIRING SUBSTRATE - There is provided a semiconductor device in which a wiring inductance of a DC/DC converter formed on a multi-layered wiring substrate can be reduced and the characteristics can be improved. In the semiconductor device, in an input-side capacitor, one capacitor electrode is electrically connected to a power-supply pattern between a control power MOSFET and a synchronous power MOSFET, and the other capacitor electrode is electrically connected to a ground pattern therebetween. The multi-layered wiring substrate includes: a via conductor arranged at a position of the one capacitor electrode for electrically connecting among a plurality of power-supply patterns in a thickness direction; and a via conductor arranged at a position of the other capacitor electrode for electrically connecting among a plurality of ground patterns in a thickness direction. | 09-15-2011 |
20110227069 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP - A semiconductor substrate capable of detecting operating current of a MOSFET and diode current in a miniaturized MOSFET such as a trench-gate type MOSFET is provided. A semiconductor substrate includes a main current region and a current sensing region in which current smaller than main current flowing in the main current region flows. The main current region has a source electrode disposed on a main surface, the source electrode being in contact with a p-type semiconductor region (body) and an n | 09-22-2011 |
20110241644 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME AND POWER SUPPLY DEVICE - Technology of reducing leakage current in a planar MOSFET and a hollow gate type planar MOSFET is provided. In a planar MOSFET (and hollow gate type planar MOSFET), regions close to a channel in n-type source regions have a shallow depth (shallow n-type source region), and regions away from the channel have a large depth (deep n-type source region). Protruding portions in a horizontal direction of p-type well regions are positioned further inside than a surface of a substrate. In this manner, a planar MOSFET (and a hollow gate type planar MOSFET) having small leakage current can be achieved, and thus there is an effect in loss reduction in a power source using the planar MOSFET (and the hollow gate type planar MOSFET). | 10-06-2011 |
20110278655 | Semiconductor Device with Circuit for Reduced Parasitic Inductance - Parasitic inductance of the main circuit of a power source unit is reduced. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad. | 11-17-2011 |
20120001609 | DC/DC CONVERTER - In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system. | 01-05-2012 |
20120014155 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 01-19-2012 |
20120061722 | CONTROL DEVICE OF SEMICONDUCTOR DEVICE - A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided. In the control device controlling driving of a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided, a signal of tuning ON or OFF is outputted to a gate electrode in a state of outputting a signal of turning OFF to the second gate electrode. | 03-15-2012 |
20120217577 | SEMICONDUCTOR DEVICE - A trench-gate vertical-channel type power MOSFET has an advantage of a low on-state resistance. With increasing miniaturization, fluctuations in on-state resistance have posed a problem. In addition, a structural limitation in miniaturization also has posed a problem. These problems are not only those of a single power MOSFET but also are important ones in integrated circuit devices, such as IGBT using a similar structure, obtained by integrating CMOS and such a power active device on a single chip. The invention provides a semiconductor device having a trench-gate vertical-channel type power active device, such as trench-gate vertical-channel type power MOSFET, in which the width of the interlayer insulating film is made almost equal to that of the trench and a portion of the source region is comprised of a polysilicon member. | 08-30-2012 |
20120273893 | SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME - A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced. | 11-01-2012 |
20120287097 | SEMICONDUCTOR DEVICE, LED DRIVING CIRCUIT, AND APPARATUS FOR DISPLAYING AN IMAGE - The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region. | 11-15-2012 |
20130193479 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP - A semiconductor substrate capable of detecting operating current of a MOSFET and diode current in a miniaturized MOSFET such as a trench-gate type MOSFET is provided. A semiconductor substrate includes a main current region and a current sensing region in which current smaller than main current flowing in the main current region flows. The main current region has a source electrode disposed on a main surface, the source electrode being in contact with a p-type semiconductor region (body) and an n | 08-01-2013 |
20140367685 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR CHIP - A semiconductor substrate capable of detecting operating current of a MOSFET and diode current in a miniaturized MOSFET such as a trench-gate type MOSFET is provided. A semiconductor substrate includes a main current region and a current sensing region in which current smaller than main current flowing in the main current region flows. The main current region has a source electrode disposed on a main surface, the source electrode being in contact with a p-type semiconductor region (body) and an n | 12-18-2014 |