Takasuka, JP
Eiryo Takasuka, Hyogo JP
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20090206320 | GROUP III NITRIDE WHITE LIGHT EMITTING DIODE - A white light-emitting diode is fabricated by metal organic chemical vapor deposition (MOCVD), which can produce a broad band emission covering all the visible range in the spectrum by capping the Indium nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots (QDs) in single or multiple In | 08-20-2009 |
20090302308 | GROUP III NITRIDE WHITE LIGHT EMITTING DIODE - A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an In | 12-10-2009 |
Eiryo Takasuka, Itami-Shi JP
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20090126635 | Metalorganic Chemical Vapor Deposition Reactor - Affords MOCVD reactors with which, while deposited films are uniformized in thickness, film deposition efficiency can be improved. An MOCVD reactor ( | 05-21-2009 |
20090148704 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 06-11-2009 |
20090197399 | METHOD OF GROWING GROUP III-V COMPOUND SEMICONDUCTOR, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND ELECTRON DEVICE - Provided are a method of growing a group III-V compound semiconductor, and method of manufacturing a light-emitting device and an electron device, in which risks are reduced and nitrogen can be efficiently supplied at low temperatures. | 08-06-2009 |
20100173483 | GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME - The GaN single-crystal substrate | 07-08-2010 |
20110198566 | METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT - A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N | 08-18-2011 |
20120003142 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 01-05-2012 |
20120024227 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE - A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports. | 02-02-2012 |
20120118234 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT - Metal organic chemical vapor deposition equipment is metal organic chemical vapor deposition equipment for forming a film on a substrate by using a reactant gas, and includes a susceptor heating the substrate and having a holding surface for holding the substrate, and a flow channel for introducing the reactant gas to the substrate. The susceptor is rotatable with the holding surface kept facing an inner portion of the flow channel, and a height of the flow channel along a flow direction of the reactant gas is kept constant from a position to a position, and is monotonically decreased from the position to the downstream side. It is thereby possible to improve film formation efficiency while allowing the formed film to have a uniform thickness. | 05-17-2012 |
20130108788 | VAPOR-PHASE PROCESS APPARATUS, VAPOR-PHASE PROCESS METHOD, AND SUBSTRATE | 05-02-2013 |
20130255568 | METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL - A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown. | 10-03-2013 |
Hideki Takasuka, Matsumoto-Shi JP
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20110234991 | PROJECTOR - A projector includes: an external housing; and an exhaust fan configured to suck an air within the external housing and discharges the sucked air to the outside, the external housing has a top and bottom surface crossing a vertical axis, an air discharge port through that the air discharged from the exhaust fan is discharged to the outside, and a side surface that connects the top surface and the bottom surface, the exhaust fan constituted by a turbo fan that has an impeller rotatable around a predetermined rotation axis, and the rotation axis extends along the vertical axis. | 09-29-2011 |
20130265551 | PROJECTION SYSTEM, SUPPORT, AND IMAGE DISPLAY METHOD - A projection system includes a first projector and a second projector. The projection system superimposes images projected from the first and second projectors on a projection surface and displays a projected image. The projection system includes a support configured to support the first projector and the second projector. The support supports the first projector and the second projector in positions where projection distances from the first projector and the second projector to the projection surface are different. | 10-10-2013 |
Masaaki Takasuka, Kanagawa JP
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20120282546 | CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD - Disclosed are: a cyclic compound which has high solubility in a safe solvent, is highly sensitive, enables the formation of a resist pattern having a good shape, and rarely causes resist pattern collapse; a process for producing the cyclic compound; a radiation-sensitive composition containing the cyclic compound; and a resist pattern formation method using the composition. Specifically disclosed are: a cyclic compound having a specific structure; a process for producing the cyclic compound; a radiation-sensitive composition containing the compound; and a resist pattern formation method using the composition. | 11-08-2012 |
20150286136 | RESIST COMPOSITION - A resist composition of the present invention is a resist composition containing a resist base material and a solvent. The resist base material contains a specific stereoisomer. A content of the specific stereoisomer in the resist base material is 50 to 100% by mass. | 10-08-2015 |
Naohito Takasuka, Nishio-City JP
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20160069998 | VEHICLE-MOUNTED DEVICE AND VEHICLE-MOUNTED RANGING SYSTEM - A vehicle-mounted device includes an interference determination unit and a sensor control unit. The interference determination unit determines whether an interference state where a first electromagnetic wave ranging sensor equipped to a first vehicle may receive a second transmission wave transmitted from a second electromagnetic wave sensor equipped to a second vehicle is present, based on transmission time frame information received by a first wireless communication device equipped to the first vehicle, and reception duration information indicating a reception duration during which a first electromagnetic wave ranging sensor equipped to the first vehicle may receive a first reflected wave. The sensor control unit controls transmission timing for transmitting the first transmission wave from the first electromagnetic wave ranging sensor and a reception duration, and changes the transmission timing and the reception duration to avoid the interference state, when the interference determination unit determines that the interference state is present. | 03-10-2016 |
20160070000 | IN-VEHICLE APPARATUS PERFORMING AN OPERATION BASED ON A DISTANCE MEASURED, AND IN-VEHICLE SYSTEM INCLUDING THE IN-VEHICLE APPARATUS - An in-vehicle apparatus installed in a first vehicle. The in-vehicle apparatus includes a first distance sensor measuring a distance to an object based on time to receive a reflection wave of an electro-magnetic transmission wave from the object after a transmission of the electro-magnetic transmission wave, with the first distance sensor being an electro-magnetic wave sensor. The in-vehicle apparatus also includes an inclination angle sensor that senses a first vehicle inclination angle representative of an inclination angle of the first vehicle that includes the first distance sensor, a radio communicator that receives a second vehicle inclination angle transmitted from a second vehicle that leads the first vehicle, an angle difference calculator that calculates an angle difference between the first vehicle inclination angle and the second vehicle inclination angle, and a processor that performs a preset operation based on the distance measured by the first distance sensor. | 03-10-2016 |
Satoru Takasuka, Tachikawa JP
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20090307427 | MEMORY CARD AND METHOD OF WRITING DATA - When data is written into a memory card | 12-10-2009 |
Seiichi Takasuka, Kawasaki JP
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20090027427 | DRIVE CIRCUIT FOR LIQUID CRYSTAL DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE HAVING THE SAME - The present disclosure provides a drive circuit for a liquid crystal display device, including: a main reference table, having an entry for a drive voltage applied to a pixel at a border of a partitioned area; a sub reference table, having an entry for a drive voltage applied to a pixel in the partitioned area; and an area determining circuit element, for determining the partitioned area for a pixel according to a value of an input image signal for the pixel and determining whether the drive voltage is obtained by using the main reference table or by using the sub reference table, according to the partitioned area determined. Therefore, an appropriate over drive voltage may be obtained and the number of the entries may be lowed. | 01-29-2009 |
Shouichi Takasuka, Hyogo JP
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20090074022 | DUAL-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element. | 03-19-2009 |
20150043604 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2>X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D202-12-2015 | |
Tomoko Takasuka, Hachioji-Shi JP
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20110073854 | POLYMER COMPOUND AND ORGANIC TRANSISTOR USING THE SAME - A polymer compound comprising a repeating unit represented by the formula (I): | 03-31-2011 |
Yukitsugu Takasuka, Kanagawa JP
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20110060952 | Semiconductor integrated circuit - The semiconductor integrated circuit including a memory macro includes a memory cell unit, input data holding units, and output data holding units. The input data holding units hold one of values of input data signals and a scan value depending on a scan control signal in accordance with an operating clock. The output data holding units hold one of values held by the input data holding units and data values stored by the memory cell unit depending on a test control signal in accordance with a phase different from a phase to operate the input data holding units. Further, the input data holding units and the output data holding units are alternately connected in series, and one input data holding unit is arranged at the top. A value held by one output data holding unit is transmitted to another input data holding unit arranged at a subsequent stage of the one output data holding units as the scan value. | 03-10-2011 |
20110113286 | SCAN TEST CIRCUIT AND SCAN TEST METHOD - A scan test circuit for a memory with a first memory cell column, a second memory cell column that replaces a failed column of the first memory cell column, a first switching circuit that connects one of the memory cell columns to a first peripheral circuit disposed at an input side, and a second switching circuit that connects one of the memory cell columns to a second peripheral circuit disposed at an output side, comprises: a test priority control circuit that controls the switching circuits to establish at least two patterns of connections of the memory cell columns to the peripheral circuits; and a test point circuit that includes scan flip-flop circuits employed in a scan test for detecting a delay fault of the peripheral circuits, and is disposed between the memory cell columns and the first switching circuit. | 05-12-2011 |