Patent application number | Description | Published |
20100193772 | Thin film transistor and display device - Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film. | 08-05-2010 |
20100193784 | THIN-FILM TRANSISTOR AND DISPLAY DEVICE - A thin-film transistor includes: a gate electrode formed on a substrate; an oxide semiconductor layer forming a channel region corresponding to the gate electrode; a first gate insulating film formed on the substrate and the gate electrode, and including a silicon nitride film; a second gate insulating film selectively formed to contact with the oxide semiconductor layer in a region, on the first gate insulating film, corresponding to the oxide semiconductor layer, and including one of a silicon oxide film and a silicon oxynitride film; a source/drain electrode; and a protecting film. An upper surface and a side surface of the oxide semiconductor layer and a side surface of the second gate insulating film are covered, on the first gate insulating film, by the source/drain electrode and the protecting film. | 08-05-2010 |
20110215328 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE - There is provided a thin film transistor, which has a uniform and good electric characteristic and has a simple configuration allowing decrease in number of manufacturing steps, and a method of manufacturing the thin film transistor, and a display device having the thin film transistor. The thin film transistor includes: a gate electrode; an oxide semiconductor film having a multilayer structure of an amorphous film and a crystallized film; and a source electrode and a drain electrode provided to contact the crystallized film. | 09-08-2011 |
20120211755 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND DISPLAY - Disclosed herein is a manufacturing method of a thin film transistor including: forming a channel layer made of an oxide semiconductor above a gate electrode with a gate insulating film provided therebetween, forming a channel protection film made of a conductive material adapted to cover the channel layer and forming a pair of source and drain electrodes in such a manner as to be in contact with the channel protection film; and removing the region of the channel protection film between the source/drain electrodes by etching relying on selectivity between the conductive material and crystalline oxide semiconductor. | 08-23-2012 |
20130056728 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided is a thin film transistor capable of improving reliability in the thin film transistor including an oxide semiconductor layer. A thin film transistor including: a gate electrode; a gate insulating film formed on the gate electrode; an oxide semiconductor layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective film formed at least in a region corresponding to the channel region on the oxide semiconductor layer; and a source/drain electrode. A top face and a side face of the oxide semiconductor layer are covered with the source/drain electrode and the channel protective layer on the gate insulating film. | 03-07-2013 |
20130089940 | METHOD OF MANUFACTURING DISPLAY UNIT - A method of manufacturing a display unit includes: forming, on a substrate, a thin-film transistor having an oxide semiconductor layer; and forming, above the thin-film transistor, a display region that includes a plurality of display elements. The oxide semiconductor layer is formed using a sputtering method in which a target and the substrate are opposed to each other. The target is made of an oxide semiconductor and includes a plurality of divided portions that are jointed in a planar form. A spacing interval between two joints that are formed by the plurality of divided portions and are side-by-side with one another of the target is equal to or less than a width of a luminance distribution arising in the display region in a direction substantially orthogonal to the joints. | 04-11-2013 |
20130175522 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, DISPLAY, AND ELECTRONIC APPARATUS - A thin film transistor includes: a gate electrode, a source electrode, and a drain electrode; an oxide semiconductor layer provided on one side of the gate electrode with an insulating film in between, the oxide semiconductor layer being provided in a region not facing the source electrode and the drain electrode and being electrically connected to the source electrode and the drain electrode; and a low resistance oxide layer provided in a region facing the source electrode and in a region facing the drain electrode, the regions being adjacent to the oxide semiconductor layer, and the low resistance oxide layer having an electric resistivity lower than an electric resistivity of the oxide semiconductor layer. | 07-11-2013 |
20130187164 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS - There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (Al | 07-25-2013 |