Takashi Yokoyama
Takashi Yokoyama, Matsumoto-Shi JP
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20110089433 | METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE - In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate | 04-21-2011 |
Takashi Yokoyama, Osaka JP
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20110022400 | AUDIO RESUME PLAYBACK DEVICE AND AUDIO RESUME PLAYBACK METHOD - An audio playback device includes an interruption-information storage memory which holds frame information at the time of an interruption of playback, a compressed-stream control section which calculates a start position of reading the compressed stream from a recording medium, and reads the compressed stream accordingly, a compressed-stream decode section which decodes the compressed audio stream and transmits decoding information on the frame to the compressed-stream control section as additional resume information, and an output control section which outputs a decoding result. When playback is restarted after an interruption, playback can be restarted without any section not played back in terms of time and without any frequency range not played back, by calculating the start position of reading the compressed stream based on both the additional resume information and the frame information at the time of the interruption, and by reading the compressed stream accordingly. | 01-27-2011 |
20140051235 | METHOD FOR PRODUCING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE PRODUCED BY THE SAME - A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step of for implanting P-type ions from a side of a surface Si layer | 02-20-2014 |
Takashi Yokoyama, Natori-Shi JP
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20100308244 | LINEAR SOLENOID AND VALVE DEVICE USING THE SAME - A liner solenoid comprising: liner solenoid portion, comprising: a coil; a cylindrical movable core which is attracted toward a fixed core when the coil is energized; and a cylindrical yoke which surrounds an outer circumference surface of the movable core, wherein the movable core has a shaft-less structure, a first plain bearing and a second plain bearing for slidably supporting both ends of the movable core are provided respectively at both ends of a cylindrical yoke along its axis, and the first plain bearing and the second plain bearing are provided to be projected from the inner circumference surface of the cylindrical yoke by a predetermined length T toward the movable core. | 12-09-2010 |
Takashi Yokoyama, Nagano JP
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20100252837 | METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME - A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer | 10-07-2010 |
Takashi Yokoyama, Shiga JP
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20100142627 | COMMUNICATION APPARATUS - In a single-wire data communication characterized in that a data communication unit time is different in accordance with the polarity of a signal, a communication control time is dependent on a communication data pattern, and hence, the control of the whole system is difficult. A counter for counting a clock continues the counting until a count value thereby obtained reaches a predetermined upper limit value, retains the predetermined upper limit value as the count value until a next pulse is detected in a reception signal after the count value reaches the predetermined upper limit value, and initializes the count value when the next pulse is detected. A data value judger judges a data value depending on whether or not the pulse is detected during a period before the time when the count value reaches the predetermined upper limit value. | 06-10-2010 |
Takashi Yokoyama, Yokohama JP
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20100135280 | TELECOMMUNICATIONS SYSTEM AND TELECOMMUNICATIONS MANAGEMENT APPARATUS - The migration of telephone services by a telecommunications carrier from a PSTN to an IP network entails that problem that when it is not possible for some telephone subscribers to migrate to the IP network due to the types of their telephone lines or services they subscribe to, other subscribers also cannot migrate to the IP network until the former subscribers migrate to the IP network. | 06-03-2010 |
20130185721 | NETWORK DEVICE AND NETWORK SYSTEM - A live migration process between different locations is realized without migrating data stored in a storage area to another location. A network device, which is included in each of locations, for coupling to another one of the locations, the network device stores a program for realizing an access processing module for managing accesses, and coupling management information for managing a coupling relationship between the plurality of virtual machines and the plurality of storage areas, and wherein the access processing module is configured to: receive a notification to start a live migration process, refer to the coupling management information to identify a port for accessing a storage area allocated to a virtual machine; acquire an address of a transfer destination device to which an access request is transferred; generate conversion information; and control the access request based on the conversion information. | 07-18-2013 |
Takashi Yokoyama, Saitama JP
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20090314231 | V-type internal combustion engine including throttle valve device, and vehicle incorporating same - A V-type internal combustion engine includes a crankcase, a crankshaft disposed in the crankcase, and first and second banks operatively attached to the crankcase. The engine also includes a throttle body, an electric motor and a force-transmitting device arranged between the first and second banks. The force-transmitting device is disposed adjacent the front bank with respect to the throttle body. The force-transmitting device is disposed on a non-transmitting portion side opposite to a side where a timing mechanism is located with respect to a branch pipe of an intake air routing pipe, which supplies intake air into a cylinder adjacent to the timing mechanism of the first bank. An electric motor for operating the throttle valve is provided in the throttle body, and fuel injection valves are arranged between the banks. | 12-24-2009 |
Takashi Yokoyama, Kawasaki JP
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20090161586 | TRANSMITTER-RECEIVER - There is provided a transmitter receiver apparatus in which a directional coupler and single pole double throw (SPDT) switches are includes on the reception side. In the directional coupler, a reception signal is inputted and split into two signals having phases different from each other by 90° and the two split signals are outputted to SPDTs. Each of the SPDTs outputs each of the split signals to an output terminal connected to an amplifier during a passage mode and to a terminal terminated with a predetermined impedance during a blocking mode. | 06-25-2009 |
20090298446 | DISTORTION COMPENSATING APPARATUS, WIRELESS COMMUNICATING APPARATUS, AND DISTORTION COMPENSATING METHOD - A distortion compensating apparatus includes following units. An information measuring unit measures a distortion component and an electric power component based on a radiation signal. A compensation coefficient calculating unit calculates a compensation coefficient based on the distortion component and the electric power component. A signal transmitting unit outputs a signal corrected by the compensation coefficient as a transmission signal. A signal converting unit converts the transmission signal into a high frequency signal. An amplitude separating unit amplifies the high frequency signal and separates a portion thereof as a signal to be fed back. A feeding-back unit processes the portion and outputs the result as a feedback signal to the information measuring unit. An electric power information extracting unit outputs a portion of the high frequency signal as the radiation signal, extracts electric power information from the radiation signal, and directly outputs the electric power information to the information measuring unit. | 12-03-2009 |
Takashi Yokoyama, Ibaraki JP
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20080227118 | Protein Immobilization Method and Quantification Method - The present invention relates to a method for immobilizing a protein in a sample, which could not easily be immobilized by the conventional immobilization method, to a solid-phase; a method for quantitative determination of protein wherein an effect of inhibitory substance coexisting in a sample prepared using the immobilization method can be reduced; and a rapid and highly precise method for detecting an abnormal PrP and a method for determining BSE using the immobilization method as compared with the conventional method. The present invention provides: “a method for immobilizing a protein to a solid-phase comprising contacting the protein with the solid-phase having hydrophobic surface in the presence of a lower alcohol, and a halogenocarboxylic acid and/or a long chain alkyl sulfate, and an immobilizing reagent solution to be used therefor; a method for quantitative determination of protein comprising contacting a protein-staining solution with the solid-phase immobilized with a protein by the immobilization method, and determining a degree of color development generated thereby; an immunoblotting method wherein the solid-phase immobilized with a protein by the immobilization method is used; and a method for detecting an abnormal PrP a method for determining BSE by using the immobilization method.” | 09-18-2008 |
20090263665 | LUMINESCENT PRODUCT AND PROCESS FOR PRODUCING THE SAME - A luminescent product molded by centrifugal molding which is inhibited from curling and has a white layer for improving phosphorescent performance. The product comprises: a hiding layer formed from a first mixture which is a mixture of a first thermosetting resin and a pigment by subjecting the mixture to centrifugal molding with heating; a phosphorescent layer obtained from a second mixture which is a mixture of a second thermosetting resin and a phosphorescent pigment having a higher specific gravity than the second thermosetting resin by pouring the second mixture on the hiding layer and subjecting it to centrifugal molding with heating; and a transparent layer. The phosphorescent layer is located nearly at the center of the product thickness. Thus, the product can be effectively inhibited from curling. | 10-22-2009 |
20110124843 | METHOD FOR EFFICIENTLY AMPLIFYING ABNORMAL PRION PROTEIN DERIVED FROM BSE - A method for efficiently amplifying abnormal prion protein (PrP | 05-26-2011 |
Takashi Yokoyama, Wako-Shi JP
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20090241923 | FUEL DISTRIBUTION APPARATUS FOR A V-TYPE ENGINE - A fuel distribution apparatus for a V-type engine wherein first and second throttle bodies connected to first and second banks disposed in a V shape, respectively, are disposed therebetween and a main fuel distribution pipe for distributing fuel from a common fuel supply system is connected to first and second fuel injection valves provided in the first and second throttle bodies, respectively, is configured such that the fuel distribution pipe is formed from first and second distribution pipes separate from each other and connected to the first and second fuel injection valves and besides fastened to the first and second throttle bodies, respectively, a joint pipe connects the fuel supply to the first or second distribution pipes. Communication conduit connects the first and second distribution pipes. | 10-01-2009 |
Takashi Yokoyama, Kanagawa JP
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20090108367 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention provides a semiconductor device includes: an element isolation region configured to be formed in a semiconductor substrate; a P-type field effect transistor configured to be formed in a first element formation region of the semiconductor substrate for which isolation by the element isolation region is carried out; an N-type substrate region configured to be formed in the semiconductor substrate for which isolation by the element isolation region is carried out, arsenic being ion-implanted into the N-type substrate region; a nickel silicide layer configured to be formed on the N-type substrate region; a first insulating film configured to cover the P-type field effect transistor and have compressive stress; and a second insulating film configured to cover the N-type substrate region and have tensile stress or compressive stress lower than the compressive stress of the first insulating film. | 04-30-2009 |
20140332749 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes: a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening. | 11-13-2014 |
20150060967 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR UNIT - A semiconductor device includes: a semiconductor substrate having a first surface and a second surface that face each other, and having an element region and an isolation region, the element region including a transistor in the first surface, and the isolation region including an element isolation layer surrounding the element region; and a contact plug extending from the first surface to the second surface in the isolation region of the semiconductor substrate. | 03-05-2015 |
20150061020 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate including a first surface and a second surface facing each other, the semiconductor substrate having an element region in which a transistor is provided on the first surface, and a separation region in which an element separating layer surrounding the element region is provided; a contact plug extending from the first surface to the second surface, in the element region of the semiconductor substrate; and an insulating film covering a periphery of the contact plug. | 03-05-2015 |
20150380463 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device including a transistor on a main surface side of a semiconductor substrate; and a resistance change element on a back-surface side of the semiconductor substrate, wherein the transistor includes a low-resistance section in the semiconductor substrate, the low-resistance section extending to the back surface of the semiconductor substrate, an insulating film is provided in contact with a back surface of the low-resistance section, the insulating film has an opening facing the low-resistance section, and the resistance change element is connected to the low-resistance section through the opening. | 12-31-2015 |
Takashi Yokoyama, Kariya-Shi JP
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20090108655 | SEAT APPARATUS FOR VEHICLE - A seat apparatus for a vehicle includes a first engagement member moving in association with an upper arm, a second engagement member pivotally moved between a first position and a second position for pivotally moving the upper arm from a first pivot position to a second pivot position and retaining the upper arm at the second position by an engagement between the first engagement member and an engagement portion of the second engagement member, and a tilting mechanism releasing a lock of a reclining mechanism for pivotally moving the upper arm to a third pivot position. The seat apparatus further includes a retaining mechanism provided at the second engagement member for retaining the second engagement member at the first position against a biasing force of a biasing mechanism for biasing the second engagement member in a direction from the first position to the second position. | 04-30-2009 |
Takashi Yokoyama, Hyogo JP
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20090104522 | STORAGE BATTERY AND PRODUCTION METHOD THEREOF - A storage battery includes: a bottomed metal case ( | 04-23-2009 |
Takashi Yokoyama, Seto-Shi JP
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20110116880 | TOOL RADIUS ADJUSTING SYSTEM FOR BORING HOLDER, TOOL RADIUS ADJUSTING METHOD IN MACHINE TOOL, AND MACHINE TOOL - A boring holder in a tool radius adjusting system is provided with a cutting blade and fine and coarse motion adjusting mechanisms each capable of adjusting the position of the cutting blade relative to a rotational axis of the boring holder. The tool radius adjusting system is provided with a tool radius measuring device for measuring the tool radius of the boring holder and a controller configured to calculate a compensation amount based on a tool radius measured by the tool radius measuring device and a target tool radius and to operate the fine and coarse motion adjusting mechanisms based on the compensation amount so that the tool radius is brought into agreement with the target tool radius. | 05-19-2011 |
20120058871 | MACHINE TOOL INCLUDING TOOL RADIUS ADJUSTING DEVICE - A tool radius adjusting device executes an operation for adjusting the tool radius of a boring holder in parallel with execution of a machining program for executing an operation of a spindle head and an operation of a tool changer. A carrier control unit determines whether the tool changer is executing a tool changing process. When the tool changing process is not being executed, the carrier control unit allows the carrier device to execute an operation for picking the boring holder out from the tool magazine and an operation for returning the boring holder, of which the tool radius has been adjusted, to the tool magazine. | 03-08-2012 |
20130064616 | TOOL RADIUS ADJUSTING METHOD IN MACHINE TOOL AND MACHINE TOOL FOR PRACTICING THE METHOD - At a contact step in a tool radius adjusting method, a reference portion of a movable body provided radially movably on a housing of a boring tool and a position adjusting reference member fixed on a machine tool are brought into contact by sliding the movable body relative to the housing so that the position of a cutting blade comes to a predetermined position in a direction to go away from a rotational axis. Then, at an adjusting step, the position of the cutting blade relative to the rotational axis is adjusted by changing the relative position between a tool spindle holding the boring tool and the position adjusting reference member in a direction to come close to each other by drive mechanisms of the machine tool used for positioning a spindle head with the tool spindle relative to a workpiece in machining the workpiece with the cutting blade. | 03-14-2013 |
Takashi Yokoyama, Kumamoto JP
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20120248544 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - A semiconductor device includes: a first substrate on which a first field effect transistor is provided; and a second substrate on which a second field effect transistor of a second conductive type is provided; the first and second substrates being bonded to each other at the substrate faces thereof on which the first and second field transistors are provided, respectively; the first field effect transistor and the second field effect transistor being electrically connected to each other. | 10-04-2012 |
20140091321 | SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes. | 04-03-2014 |
20150287754 | SEMICONDUCTOR DEVICE AND SOLID-STATE IMAGING DEVICE WITH TANTALUM OXIDE LAYER FORMED BY DIFFUSING A MATERIAL OF AN ELECTRODE OF NECESSITY OR A COUNTER ELECTRODE - There is provided a semiconductor device including a semiconductor layer that includes an active region, semiconductor elements that are formed using the active region, connection regions that are obtained by metalizing parts of the semiconductor layer in an island shape isolated from the active region, an insulation film that is formed to cover one main surface side of the semiconductor layer, electrodes that are disposed to face the semiconductor elements and the connection regions via the insulation film, and contacts that penetrate through the insulation film to be selectively formed in portions according to necessity among portions that connect the semiconductor elements or the connection regions to the electrodes. | 10-08-2015 |
20160056291 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - A semiconductor device includes: a first substrate on which a first field effect transistor is provided; and a second substrate on which a second field effect transistor of a second conductive type is provided; the first and second substrates being bonded to each other at the substrate faces thereof on which the first and second field transistors are provided, respectively; the first field effect transistor and the second field effect transistor being electrically connected to each other. | 02-25-2016 |
Takashi Yokoyama, Tokyo JP
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20130071255 | Gas Turbine Blade - A gas turbine blade having a film cooling structure can reduce stress and strain that occur around the cooling holes of the film cooling structure. For example, in the gas turbine blade, a plurality of cooling holes thoroughly connected to the cooling pass formed inside the gas turbine blade are arranged in the span direction in the leading edge portion of the gas turbine blade, and the direction of the longitudinal axis of the cooling holes is made identical to the direction of principal strain occurring in the leading edge portion of the turbine blade within a range of 15 degrees. | 03-21-2013 |
20130311617 | COMMUNICATION SYSTEM, COMMUNICATION METHOD, AND HEARTBEAT ACTING SERVER - There is provided a unit for reducing the amount of data to be transmitted and received to reduce a network load. Heartbeat acting servers monitor heartbeat signals to be transmitted and received by respective physical servers (virtual machines) at entrances of data center sites, consolidate heartbeat presence or absence information of the plural physical servers (virtual machines) within the data centers, and transmit and receive the collected heartbeat information of the respective physical servers (virtual machines) between the sites in a lump. | 11-21-2013 |
20140255208 | Gas Turbine Blade - The gas turbine blade includes a cooling channel formed therein, and a partition disposed on its tip side for isolating the cooling channel from the outside. The partition is integrally formed with a blade portion in a position on its inner side in the radial direction with respect to the tip of the gas turbine blade. Reinforcements are provided on the outer side of the partition in the radial direction and on the inner side of the tip end wall extended from the blade portion to connect the partition with the tip end wall. Outer surface cooling holes are formed to extend from the cooling channel into communication with an outer surface of the tip end wall, and inner surface cooling holes are formed to extend from the cooling channel into an inner surface of the tip end wall through the partition. | 09-11-2014 |
20150195104 | COMMUNICATION APPARATUS, COMMUNICATION SYSTEM, AND COMMUNICATION METHOD - Upon receipt of an intercepted first Ethernet Frame, a communication system converts the first Ethernet Frame into a second Ethernet Frame including a second identifier based on the first identifier and the conversion information, and sends the second Ethernet Frame toward a first input/output port identified by the second identifier. The system, in sending an Ethernet Frame on which communication service has been executed from the virtual machine, converts the Ethernet Frame on which the communication service has been executed into a third Ethernet Frame including a third identifier identifying a second input/output port of the virtual machine which has executed the communication service. The system converts the third Ethernet Frame into the first Ethernet Frame including the first identifier based on the third identifier and the conversion information and sends the first Ethernet Frame toward the destination of the first Ethernet Frame. | 07-09-2015 |
Takashi Yokoyama, Yokohama-Shi JP
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20130124614 | THIN CLIENT SYSTEM AND SERVER APPARATUS - In a thin client system including client terminals and a server apparatus, when a user input operation that requires high-speed reactivity of screen display to the user operation is performed at one of the client terminals, the server can change the amount of data to be transmitted to the client terminal in accordance with the communication quality of the connection network. The client terminal transmits the user input operation in the form of input operation information to the server apparatus, and the server apparatus analyzes the received input operation information, and judges whether the input operation is one that requires high-speed reactivity of screen display to the input operation. If the input operation is one that requires high-speed reactivity of screen display, the server performs the reduction of screen information to be displayed at the client terminal. | 05-16-2013 |
Takashi Yokoyama, Numazu-Shi, Shizuoka-Ken JP
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20160138139 | SPHEROIDIZING TREATMENT METHOD FOR MOLTEN METAL OF SPHEROIDAL GRAPHITE CAST IRON - A graphite spheroidizing agent containing: 30-80 wt % of Si; Mg; RE (rare earth element) which comprises Ce with a purity level of 80-100 wt % or La with a purity level of 80-100 wt %; Ca; and Al is used. The graphite spheroidizing agent is added so as to satisfy the conditions that an amount of RE equivalent to 0.001-0.009 wt % of the total weight of the molten metal, an amount of Ca equivalent to 0.001-0.02 wt % of the total weight of the molten metal, and an amount of Al equivalent to 0.001-0.02 wt % of the total weight of the molten metal are added to the molten metal, and that the molten metal contains 0.03-0.07 wt % of Mg after the graphite spheroidizing treatment. It is possible to suppress crystallization of chunky graphite in a thick section of spheroidal graphite cast iron and deterioration of mechanical properties, with a low cost. | 05-19-2016 |