Patent application number | Description | Published |
20080230804 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME - A semiconductor device having an electrode with reduced electrical contact resistance even where either electrons or holes are majority carriers is disclosed. This device has an n-type diffusion layer and a p-type diffusion layer in a top surface of a semiconductor substrate. The device also has first and second metal wires patterned to overlie the n-type and p-type diffusion layers, respectively, with a dielectric layer interposed therebetween, a first contact electrode for electrical connection between the n-type diffusion layer and the first metal wire, and a second contact electrode for connection between the p-type diffusion layer and the second metal wire. The first contact electrode's portion in contact with the n-type diffusion layer and the second contact electrode's portion contacted with the p-type diffusion layer are each formed of a first conductor that contains a metal and a second conductor containing a rare earth metal. | 09-25-2008 |
20090008726 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device reducing interface resistance of n-type and p-type MISFETs are provided. According to the method, a gate dielectric film and a gate electrode of the n-type MISFET are formed on a first semiconductor region, a gate dielectric film and a gate electrode of the p-type MISFET are formed on a second semiconductor region, an n-type diffusion layer is formed by ion implantation of As into the first semiconductor region, a first silicide layer is formed by first heat treatment after a first metal containing Ni is deposited on the n-type diffusion layer, the first silicide layer is made thicker by second heat treatment after a second metal containing Ni is deposited on the first silicide layer and second semiconductor region, and third heat treatment is provided after formation of a second silicide layer and ion implantation of B or Mg into the second silicide layer. | 01-08-2009 |
20090134388 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SAME - A semiconductor device having a metal insulator semiconductor field effect transistor (MISFET) with interface resistance-reduced source/drain electrodes is disclosed. This device includes a p-type MISFET formed on a semiconductor substrate. The p-MISFET has a channel region in the substrate, a gate insulating film on the channel region, a gate electrode on the gate insulating film, and a pair of laterally spaced-apart source and drain electrodes on both sides of the channel region. These source/drain electrodes are each formed of a nickel (Ni)-containing silicide layer. The p-MISFET further includes an interface layer which is formed on the substrate side of an interface between the substrate and each source/drain electrode. This interface layer contains magnesium (Mg), calcium (Ca) or barium (Ba) therein. A fabrication method of the semiconductor device is also disclosed. | 05-28-2009 |
20090152652 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment. | 06-18-2009 |
20100051906 | SEMICONDUCTOR DEVICE - A semiconductor device for correcting an input signal and outputting a corrected signal are provided. The semiconductor device includes a semiconductor layer, a plurality of first conductors formed on one of faces of the semiconductor layer and serving as input terminals to which a signal is input, second conductors of the number larger than that of the first conductors at density higher than that of the first conductors, formed on the other face of the semiconductor layer, a high impurity concentration region provided on the semiconductor layer side of an interface between the second conductor and the semiconductor layer, an insulating layer formed on the other face, and a plurality of third conductors formed on the insulating layer and serving as output terminals for outputting the processed signal. | 03-04-2010 |
20100328357 | Drive Circuit, liquid crystal display device, and method for controlling output voltage - An exemplary embodiment of the present invention is a drive circuit for controlling an output voltage of display data supplied to a liquid crystal display panel includes a hold circuit that holds a gradient of the display data, a bit detection circuit that compares the gradient of the display data with a last gradient held in the hold circuit to thereby detect a comparison result, a current capability selection circuit that selects any of a plurality of current capabilities in synchronization with a bit comparison signal based on the detected comparison result, and an output circuit that converts the display data into a voltage according to the gradient thereof using the selected current capability and outputs the converted voltage. | 12-30-2010 |
20120161737 | OUTPUT CIRCUIT - There is provided an output circuit for supplying an output current to a load coupled to an output terminal in response to an input signal. The output circuit includes an output transistor for supplying the output current to the output terminal, an output-drive circuit for driving the output transistor, a constant-current limiting circuit for generating a current control signal for limiting the output current to a predetermined current value, and a control circuit for implementing a control such that the output current is controlled on the basis of the current control signal if a voltage at the output terminal is at a predetermined voltage, or less after the input signal is supplied while the output transistor is driven by the output-drive circuit if the voltage at the output terminal is in excess of the predetermined voltage. | 06-28-2012 |
20120205608 | NONVOLATILE VARIABLE RESISTANCE DEVICE AND METHOD OF MANUFACTURING THE NONVOLATILE VARIABLE RESISTANCE ELEMENT - According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer. | 08-16-2012 |
20120292586 | NONVOLATILE VARIABLE RESISTANCE ELEMENT - According to one embodiment, there are provided a first electrode, a second electrode containing a 1B group element having an Al element added thereto, and a variable resistive layer disposed between the first electrode and the second electrode and having a silicon element. | 11-22-2012 |
20140191184 | NONVOLATILE VARIABLE RESISTANCE DEVICE AND METHOD OF MANUFACTURING THE NONVOLATILE VARIABLE RESISTANCE ELEMENT - According to one embodiment, a nonvolatile variable resistance device includes a first electrode, a second electrode, a first layer, and a second layer. The second electrode includes a metal element. The first layer is arranged between the first electrode and the second electrode and includes a semiconductor element. The second layer is inserted between the second electrode and the first layer and includes the semiconductor element. The percentage of the semiconductor element being unterminated is higher in the second layer than in the first layer. | 07-10-2014 |
20150123544 | OUTPUT CIRCUIT - There is provided an output circuit for supplying an output current to a load coupled to an output terminal in response to an input signal. The output circuit includes an output transistor for supplying the output current to the output terminal, an output-drive circuit for driving the output transistor, a constant-current limiting circuit for generating a current control signal for limiting the output current to a predetermined current value, and a control circuit for implementing a control such that the output current is controlled on the basis of the current control signal if a voltage at the output terminal is at a predetermined voltage, or less after the input signal is supplied while the output transistor is driven by the output-drive circuit if the voltage at the output terminal is in excess of the predetermined voltage. | 05-07-2015 |
Patent application number | Description | Published |
20090008727 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - It is made possible to reduce the interface resistance at the interface between the nickel silicide film and the silicon. A semiconductor manufacturing method includes: forming an impurity region on a silicon substrate, with impurities being introduced into the impurity region; depositing a Ni layer so as to cover the impurity region; changing the surface of the impurity region into a NiSi | 01-08-2009 |
20120243292 | MEMORY DEVICE - According to one embodiment, a memory device includes a first electrode including a crystallized Si | 09-27-2012 |
20130306932 | NONVOLATILE RESISTANCE CHANGE ELEMENT - According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. The semiconductor layer is sandwiched between the first and second electrodes. The first layer is provided between the second electrode and the semiconductor layer and contains an element included in the semiconductor layer and at least one of Ag, Ni, and Co. | 11-21-2013 |