Patent application number | Description | Published |
20080268562 | COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF - A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron. | 10-30-2008 |
20090267081 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF - A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3×3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3×3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor. | 10-29-2009 |
20090309135 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device ( | 12-17-2009 |
20100288998 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device comprises a substrate ( | 11-18-2010 |
20100288999 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - In a Group III nitride semiconductor light-emitting device which comprises a substrate ( | 11-18-2010 |
20120007050 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A GROUP-III NITRIDE SUPERLATTICE LAYER ON A SILICON SUBSTRATE - Provided is a semiconductor device containing a silicon single crystal substrate | 01-12-2012 |
20140103293 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A group III nitride semiconductor light-emitting element provided with: a semiconductor layer obtained by laminating a first semiconductor layer of a first conduction type, a light-emitting layer, and a second semiconductor layer of an opposite second conduction type; a first electrode connected to the first semiconductor layer; and a second electrode provided on the surface of the second semiconductor layer; the light-emitting layer including a first gallium indium nitride layer of a first indium composition, disposed on a side opposite the light extraction direction; a second gallium indium nitride layer of a second indium composition less than the first, disposed on the light extraction direction side from the first gallium indium nitride layer; and an intermediate layer containing a material of a smaller lattice constant than the materials constituting the first and second gallium indium nitride layers, provided between the first and second gallium indium nitride layers. | 04-17-2014 |
20140183580 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME - A group III nitride semiconductor light-emitting element having a pn junction hetero structure composed of: an n-type aluminum gallium indium nitride layer; a light-emitting layer disposed contacting the n-type aluminum gallium indium nitride layer and including a gallium indium nitride layer containing crystals having a larger lattice constant than the n-type aluminum gallium indium nitride layer; and a p-type aluminum gallium indium nitride layer provided on the light-emitting layer. Further, the relative atomic concentrations of donor impurities at either interface of the light-emitting layer and within respective layers of the light-emitting element are specified herein. | 07-03-2014 |