Patent application number | Description | Published |
20090027247 | A/D CONVERTER AND SEMICONDUCTOR DEVICE - In an A/D converter including a switched capacitor integration circuit, to suppress an effect of a noise generated in the switched capacitor circuit while suppressing increase in a forming area of the circuit. A first-stage integrator of a differential input type A/D converter includes first and second switched capacitor circuits, and includes a noise cancel circuit for generating a noise cancel signal to cancel a kickback noise generated due to switching operation thereof. | 01-29-2009 |
20090127713 | SEMICONDUCTOR DEVICE - It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be a region in which a digital circuit is formed and an analog block to be a region in which an analog circuit is formed, arranged by separating an upper surface of the semiconductor substrate and a substrate potential fixing region provided on the semiconductor substrate so as to surround in a planar view the predetermined semiconductor element group in the analog block, and a pad connected to the substrate potential fixing region and receiving a predetermined potential from an external part. | 05-21-2009 |
20090267816 | DELTA SIGMA-TYPE A/D CONVERTER - There is provided a technique for reducing the adverse effect of idle tones in the channels in a ΔΣ-type A/D converter including a plurality of channels for converting analog input signals into digital signals. The ΔΣ-type A/D converter includes an L channel for converting a left analog input signal into a digital signal and an R channel for converting a right analog input signal into a digital signal. Each of the L channel and the R channel includes a DC dither circuit for generating a DC addition voltage for shifting the frequency of an idle tone. In the L channel and the R channel, DC addition voltages generated by DC dither circuits are different from each other. | 10-29-2009 |
20100109775 | SEMICONDUCTOR DEVICE HAVING RESISTORS WITH A BIASED SUBSTRATE VOLTAGE - To eliminate the substrate voltage dependences of the respective resistance values of resistor elements, in the resistor elements coupled in series to each other over respective substrate regions, the ends of the resistor elements are coupled to the corresponding substrate regions by respective bias wires such that respective average potentials between the substrate regions of the resistor elements and the corresponding resistor elements have opposite polarities, and equal magnitudes. | 05-06-2010 |
20110037633 | DELTA SIGMA-TYPE A/D CONVERTER - There is provided a technique for reducing the adverse effect of idle tones in the channels in a ΔΣ-type A/D converter including a plurality of channels for converting analog input signals into digital signals. The ΔΣ-type A/D converter includes an L channel for converting a left analog input signal into a digital signal and an R channel for converting a right analog input signal into a digital signal. Each of the L channel and the R channel includes a DC dither circuit for generating a DC addition voltage for shifting the frequency of an idle tone. In the L channel and the R channel, DC addition voltages generated by DC dither circuits are different from each other. | 02-17-2011 |
20110068383 | SEMICONDUCTOR DEVICE - It is an object of the present invention to surely protect a predetermined semiconductor element or a predetermined semiconductor element group in an analog block from a noise generated from a digital block. A semiconductor device according to the present invention includes a semiconductor substrate, a digital block to be a region in which a digital circuit is formed and an analog block to be a region in which an analog circuit is formed, arranged by separating an upper surface of the semiconductor substrate and a substrate potential fixing region provided on the semiconductor substrate so as to surround in a planar view the predetermined semiconductor element group in the analog block, and a pad connected to the substrate potential fixing region and receiving a predetermined potential from an external part. | 03-24-2011 |
20130069132 | SEMICONDUCTOR STORAGE DEVICE - Probability of malfunction of a semiconductor storage device is reduced. A shielding layer is provided between a memory cell array (e.g., a memory cell array including a transistor formed using an oxide semiconductor material) and a peripheral circuit (e.g., a peripheral circuit including a transistor formed using a semiconductor substrate), which are stacked. With this structure, the memory cell array and the peripheral circuit can be shielded from radiation noise generated between the memory cell array and the peripheral circuit. Thus, probability of malfunction of the semiconductor storage device can be reduced. | 03-21-2013 |
20130148411 | MEMORY DEVICE - A memory device including first to fourth memory cell arrays and a driver circuit including a pair of bit line driver circuits and a pair of word line driver circuits is provided. The first to fourth memory cell arrays are overlap with the driver circuit. Each of the pair of bit line driver circuits and a plurality of bit lines are connected through connection points on an edge along the boundary between the first and second memory cell arrays or on an edge along the boundary between the third and fourth memory cell arrays. Each of the pair of word line driver circuits and a plurality of word lines are connected through second connection points on an edge along the boundary between the first and fourth memory cell arrays or on an edge along the boundary between the second and third memory cell arrays. | 06-13-2013 |