Patent application number | Description | Published |
20100193760 | CURRENT RESTRICTING ELEMENT, MEMORY APPARATUS INCORPORATING CURRENT RESTRICTING ELEMENT, AND FABRICATION METHOD THEREOF - In a current rectifying element ( | 08-05-2010 |
20100295012 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element comprises a resistance variable element | 11-25-2010 |
20110002155 | CURRENT CONTROL ELEMENT, MEMORY ELEMENT, AND FABRICATION METHOD THEREOF - A memory element ( | 01-06-2011 |
20110103133 | MEMORY CELL ARRAY, NONVOLATILE STORAGE DEVICE, MEMORY CELL, AND METHOD OF MANUFACTURING MEMORY CELL ARRAY - A method of manufacturing a memory cell array in which first conductive layers ( | 05-05-2011 |
20120028123 | CARBON NANOTUBE FORMING SUBSTRATE, CARBON NANOTUBE COMPLEX, ENERGY DEVICE, METHOD FOR MANUFACTURING ENERGY DEVICE, AND APPARATUS INCLUDING ENERGY DEVICE - Provided are a substrate on which carbon nanotubes each having one end connected to the substrate can be formed at a high synthetic rate and from which the carbon nanotubes are less likely to be peeled off. The substrate is a substrate for forming the carbon nanotubes and includes a buffer layer | 02-02-2012 |
20120161095 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a memory device of increased capacity, and a method of manufacturing the same. The semiconductor memory device in the present invention includes: a first contact plug ( | 06-28-2012 |
20130056701 | NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element including a resistance variable element configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities; and a current controlling element configured such that when a current flowing when a voltage whose absolute value is a first value which is larger than 0 and smaller than a predetermined voltage value and whose polarity is a first polarity is applied is a first current and a current flowing when a voltage whose absolute value is the first value and whose polarity is a second polarity is applied is a second current, the first current is higher than the second current, and the resistance variable element is connected with the current controlling element such that the first polarity voltage is applied to the current controlling element when the resistance variable element changes from the low-resistance to the high-resistance state. | 03-07-2013 |
20140028825 | IMAGING-OBSERVATION APPARATUS - An imaging-observation apparatus according to the present disclosure includes: an image capturing section that shoots a subject under multiple different shooting optical conditions at the same time and sequentially generates a plurality of images under those multiple different shooting optical conditions; a display control section that accepts an operator's input; an image synthesizing section that synthesizes together the plurality of images in accordance with the input to the display control section at a synthesis ratio specified by the input and sequentially generates synthetic images one after another; and a display section that presents the synthetic images. | 01-30-2014 |