Patent application number | Description | Published |
20090140322 | Semiconductor Memory Device and Method of Manufacturing the Same - A first insulation film (silicon dioxide film) and a second insulation film (aluminum oxide film) are laminated on a surface of a silicon substrate in this order to form a gate insulation film. At least one element (aluminum) of elements, which constitutes the second insulation film but is different from elements commonly contained in the whole area of the first insulation film, is caused to be contained in a part of the first insulation film, whereby a charge trapping site region is formed in the first insulation film. | 06-04-2009 |
20090156636 | THERAPEUTIC AGENT FOR GLOMERULAR DISEASE - The present invention relates to a preventive and/or therapeutic agent for a glomerular disease containing, as active ingredients pitavastatin or a salt thereof and candesartan cilexetil or a salt thereof. The agent of the present invention exhibits an excellent effect in the prevention and/or therapy of a glomerular disease. | 06-18-2009 |
20090170252 | Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer - A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer. | 07-02-2009 |
20090253229 | Method and Apparatus for Manufacturing Semiconductor Devices - A semiconductor device manufacturing method according to the present invention uses a first raw material gas containing Si, a second raw material gas containing a metal element M and an oxidation gas, in which a first step of supplying the oxidation gas onto a substrate to be treated, and a second step of supplying the first raw material gas are sequentially performed. The method further includes, after the first and second steps, a step of supplying the second raw material gas or gas mixture of the first raw material gas and the second raw material gas. | 10-08-2009 |
20090256589 | PROGRAMMABLE DEVICE, ELECTRONIC DEVICE, AND METHOD FOR CONTROLLING PROGRAMMABLE DEVICE - A programmable device connected to a storage unit which stores logic circuit configuration information to form a logic circuit and control circuit configuration information to form a control circuit includes a first programmable logic device and a second programmable logic device, and a configuration unit which forms the control circuit in the first programmable logic device, by providing the control circuit configuration information in the storage unit to the first programmable logic device. The control circuit formed in the first programmable logic device forms the logic circuit in the second programmable logic device, by providing the logic circuit configuration information in the storage unit to the second programmable logic device. | 10-15-2009 |
20100038615 | NONVOLATILE STORAGE DEVICE - An element structure for a resistance variable type nonvolatile storage device is provided in which enables a reduction in variation in operating voltage and in a leakage current in an off state of an element. The nonvolatile storage device is characterized by including a lower electrode, an upper electrode, and a laminated structure in which at least one amorphous insulating layer and at least one resistance variation layer are laminated between the lower electrode and the upper electrode. | 02-18-2010 |
20100040553 | SPHERICAL FERRITE NANOPARTICLE AND METHOD FOR PRODUCTION THEREOF - A method for producing spherical ferrite nanoparticles includes the steps of: preparing a first aqueous solution containing a disaccharide, an alkaline, an oxidation agent, seed particles and divalent iron ions; and conducting particle growth in the first aqueous solution to produce the spherical ferrite nanoparticles. | 02-18-2010 |
20100068512 | MAGNETIC MATERIAL FOR HIGH FREQUENCY WAVE, AND METHOD FOR PRODUCTION THEREOF - Disclosed is a magnetic material for a high frequency wave which has high magnetic permeability and small eddy-current loss, particularly a magnetic material for a high frequency wave which can be used suitably in an information device which works in a high frequency field of 1 GHz or higher. Specifically disclosed is a composite magnetic material for a high frequency wave, which comprises a (rare earth element)-(iron)-(nitrogen)-based magnetic material and a (rare earth element)-(iron)-(nitrogen)-based magnetic material whose surface is coated with a ferrite magnetic material. | 03-18-2010 |
20100084713 | Semiconductor device manufacturing method and semiconductor device - A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed. With such a manufacturing method, a silicide layer is formed without adding an annealing process. | 04-08-2010 |
20100176363 | VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE PROVIDED WITH THE SAME - A variable resistance element includes: a first electrode; a variable resistance material layer formed on the first electrode; and a second electrode formed on this variable resistance material layer. The variable resistance material layer is made of an uncrystallized material including a transition metal oxide, which is an oxide of a transition metal M | 07-15-2010 |
20100221885 | METHOD OF MANUFACTURING DIELECTRIC FILM - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 09-02-2010 |
20100244192 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 09-30-2010 |
20100245561 | NAVIGATION DEVICE - A navigation device includes: a map database | 09-30-2010 |
20100250116 | NAVIGATION DEVICE - A navigation device includes: a map database | 09-30-2010 |
20100253775 | NAVIGATION DEVICE - A navigation device includes a last shot determining unit | 10-07-2010 |
20100261038 | COMPOSITE MAGNETIC MATERIAL FOR MAGNET AND METHOD FOR MANUFACTURING SUCH MATERIAL - Provided is a composite magnetic material having high magnetic characteristics and high electrical resistivity to be used for a magnet, especially a composite magnetic material to be suitably used for a rotary motor magnet or the like which functions in a high frequency region. The composite magnetic material for the magnet is provided by covering the surface of a rare earth-iron-nitrogen based magnetic material with a ferrite based magnetic material. | 10-14-2010 |
20100320520 | DIELECTRIC, CAPACITOR USING DIELECTRIC, SEMICONDUCTOR DEVICE USING DIELECTRIC, AND MANUFACTURING METHOD OF DIELECTRIC - To make it possible to significantly suppress the leakage current in a semiconductor device having a capacitor structure using a dielectric film. There is provided a composite oxide dielectric which is mainly composed of Zr, Al and O, and which has a composition ratio of Zr and Al in a range of (1−x):x where 0.01≦x≦0.15, and has a crystal structure. When the dielectric is set to have the Al composition in the above described range and is crystallized, the relative dielectric constant of the dielectric can be significantly increased. When the dielectric is used as a dielectric film of a capacitor of a semiconductor device, the leakage current of the capacitor can be significantly reduced. | 12-23-2010 |
20100330813 | DIELECTRIC FILM AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM - The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film ( | 12-30-2010 |
20110018100 | CAPACITOR, SEMICONDUCTOR DEVICE COMPRISING THE SAME, METHOD FOR MANUFACTURING THE CAPACITOR, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - Provided is a capacitor that realizes a capacitance insulation film having a large relative permittivity and has sufficient capacitance even if an occupied space is small with a reduced amount of leakage current. A capacitor includes: a capacitance insulation film; and an upper electrode and lower electrode each formed on both sides of the capacitance insulation film. The capacitance insulation film is a complex oxide whose main ingredients are Zr, Al and O with the composition ratio of Zr to Al being set at (1−x): x (0.01≦x≦0.15) and is composed of a dielectric substance having a crystal structure. The lower electrode is composed of a conductor whose surface contiguous to at least the dielectric film has an amorphous structure. | 01-27-2011 |
20110027979 | DIELECTRIC FILM, METHOD OF MANUFACUTRING SEMICONDUCTOR DEVICE USING DIELECTRIC FILM, AND SEMICONDUCTOR MANUFACTURING APPARATUS - To provide a method of manufacturing a dielectric film having a high dielectric constant. In an embodiment of the present invention, an HfN/Hf laminated film is formed on a substrate on which a thin silicon oxide film is formed and a dielectric film of a metal nitride made of a mixture of Hf, Si, O and N is manufactured by annealing treatment. According to the present invention, it is possible to (1) reduce an EOT, (2) reduce a leak current to Jg=1.0×10 | 02-03-2011 |
20110038094 | CAPACITOR - A capacitor includes a plurality of laminated thin layers, has a structure in which a lower electrode layer, a dielectric layer and an upper electrode layer are laminated in sequence, a main material of the lower electrode layer is TiN or ZrN, the lower electrode layer contains oxygen, and concentration of the oxygen contained in the lower electrode layer is less than 21 at %. | 02-17-2011 |
20110064642 | DIELECTRIC FILM WITH METALLIC OXYNITRIDE - The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0<(O/A)<2.0, and having a noncrystalline structure; and a step of performing an annealing treatment at 700° C. or higher on the metallic oxynitride having a noncrystalline structure to form a metallic oxynitride including a crystalline phase with a cubical crystal incorporation percentage of 80% or higher. | 03-17-2011 |
20110155561 | REACTIVE SPUTTERING METHOD AND REACTIVE SPUTTERING APPARATUS - The present invention provides a reactive sputtering method and a reactive sputtering apparatus which suppress a film quality change caused by a temperature variation in continuous substrate processing. An embodiment of the present invention performs reactive sputtering while adjusting a flow rate of reactive gas according to the temperature of a constituent member facing a sputtering space. Specifically, a temperature sensor is provided on a shield and the flow rate is adjusted according to the temperature. Thereby, even when a degassing amount of a film adhering to the shield changes, a partial pressure of reactive gas can be set to a predetermined value. For a resistance change layer constituting a ReRAM, a perovskite material such as PrCaMn03 (PCMO), LaSrMnO3 (LSMO), and GdBaCoxOy (GBCO), a two-element type transition metal oxide material which has a composition shifted from a stoichiometric one, such as nickel oxide (NiO), vanadium oxide (V2O5), and the like are used. | 06-30-2011 |
20110156128 | DIELECTRIC FILM MANUFACTURING METHOD - The present invention provides a manufacturing method of a dielectric film which reduces a leak current value while suppressing the reduction of a relative permittivity, suppresses the reduction of a deposition rate caused by the reduction of a sputtering rate, and also provides excellent planar uniformity. A dielectric film manufacturing method according to an embodiment of the present invention is forms a dielectric film of a metal oxide mainly containing Al, Si, and O on a substrate, and comprises steps of forming the metal oxide having an amorphous structure in which a molar fraction between an Al element and a Si element, Si/(Si+Al), is 006-30-2011 | |
20110210405 | METAL NITRIDE FILM, SEMICONDUCTOR DEVICE USING THE METAL NITRIDE FILM, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - The present invention provides a metal nitride film that realizes an intended effective work function (for example, a high effective work function) and has EOT exhibiting no change or a reduced change, a semiconductor device using the metal nitride film, and a manufacturing method of the semiconductor device. The metal nitride film according to an embodiment of the present invention contains Ti, Al and N, wherein the metal nitride film has such molar fractions of Ti, Al and N as (N/(Ti+Al+N)) of 0.53 or more, (Ti/(Ti+Al+N)) of 0.32 or less, and (Al/(Ti+Al+N)) of 0.15 or less. | 09-01-2011 |
20110285477 | COMMON MODE NOISE FILTER - A common mode noise filter includes: a common mode filter inserted into a pair of signal lines; and a pair of capacitively coupled coils having one ends connected respectively to the corresponding signal lines and the other ends opened. According to the present invention, common mode noise can be removed by a common mode filter, as well as, differential mode noise in a desired frequency band can be removed by a pair of coils whose other ends are opened. | 11-24-2011 |
20110312179 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - The present invention provides a substrate processing method and a substrate processing apparatus, which are capable of forming a high-k dielectric film with few trapping levels due to oxygen deficiencies and hot carriers by a sputtering method in one and the same vacuum vessel. The substrate processing method according to a first embodiment of the present invention includes: a first step of heating a to-be-processed substrate ( | 12-22-2011 |
20120021612 | METHODS FOR MANUFACTURING DIELECTRIC FILMS - A method for manufacturing a dielectric film having a high dielectric constant is provided. | 01-26-2012 |
20120173245 | NAVIGATION SYSTEM - A navigation system is provided which facilitates discrimination between an icon of a facility associated with a route, along which the user is expected to move from now on, and an ordinary icon. To achieve this, it includes a destination estimating unit for acquiring information about a driving history and for estimating a destination from the information about the driving history acquired; a drawing decision changing unit for drawing a destination candidate estimated by the destination estimating unit in a form different from an icon of a non-destination candidate; and an information display unit for causing the icon drawn by the drawing decision changing unit to be displayed. | 07-05-2012 |
20120179365 | NAVIGATION SYSTEM - A navigation system capable of enabling a user to use navigation functions such as route guidance without setting a destination. It includes an information recording unit for storing a driving history, a destination estimating unit for estimating a destination from the driving history stored in the information recording unit, a route computing unit for calculating a route to the destination estimated by the destination estimating unit, and an information display unit for causing the route calculated by the route computing unit to be displayed. | 07-12-2012 |
20130123014 | METHOD FOR CONTROLLING COMPUTER THAT IS HELD AND OPERATED BY USER - When a cube has been selected, and a touch operation has been canceled, a retouch determination area that is larger than the original selection area for selecting the cube is set based on a touch cancellation position. When a retouch operation has been detected within the retouch determination area after the touch operation has been canceled, it is determined that the same position as the touch cancellation position has been retouched, and the cube (object) is moved. | 05-16-2013 |
20130285158 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer. | 10-31-2013 |
20140009254 | COIL COMPONENT - A coil component | 01-09-2014 |
20140145796 | COMMON MODE FILTER - A common mode filter | 05-29-2014 |