Patent application number | Description | Published |
20080203894 | DISPLAY DEVICE - The purpose of the invention is to improve the mass productivity of display devices by using a glass substrate that prevents the degradation of an electrode caused by glass of the display device. The present invention provides a flat panel display device containing at least two substrates and a light emitting part provided between the two substrates, wherein at least one substrate of the two substrates contains SiO | 08-28-2008 |
20080211384 | Field Emission Display and Glass Frit - Constituent elements of a glass frit for fixing spacers propagate along the spacers and migrate to electron emitters to deteriorate the electron emitters, and thereby silhouetting shadows of the spacers on a screen are suppressed. In an image display which is equipped with a rear substrate provided on its inner surface with electron emitters, a front substrate facing the rear substrate, provided on its inner surface with a phosphor pattern having an array corresponding to the electron emitters, and having an outer surface serving as a display surface, and in which a gap between the substrates is held by glass-made spacers, propagation along the spacers and migration to the side of the electron emitters of the constituent elements of the glass frit for fixing spacers is prevented by fixing oxide crystal particles on the spacer surface, or by fixing at least a part of the spacer to the front panel by an adhesive layer comprising a conductive glass a part of which is crystallized. | 09-04-2008 |
20080238292 | PLASMA DISPLAY PANEL AND METHOD FOR PRODUCING THE SAME - A plasma display panel comprising a front substrate and a back substrate formed opposite each other and bonded to each other at the peripheries, electrodes formed on the front substrate, a dielectric layer formed on the electrodes, a protective layer formed on the dielectric layer, another electrode and another dielectric layer formed on the back substrate, barrier ribs to keep spaces between the front substrate and the back substrate, and fluorescent materials packed in the spaces formed by the barrier ribs, the front substrate, and the back substrate. The barrier ribs include glass at least containing oxide of tungsten, phosphorus, barium, and vanadium. | 10-02-2008 |
20080238315 | PLASMA DISPLAY PANEL - To prevent occurrence of abnormal discharge which would reduce the quality of images in a PDP. At least one of an address electrode, a bus electrode, a bus main electrode, and a black electrode of a display electrode formed on a substrate is formed of metal particles and high-resistance glass to dissipate charge accumulated on a dielectric through the high-resistance glass and to prevent charging in a glass component itself, thereby reducing abnormal discharge. The high-resistance glass is preferably realized by vanadium phosphate glass containing vanadium, phosphorus, antimony, and barium. The metal particles desirably contain flaky particles. | 10-02-2008 |
20080238316 | PLASMA DISPALY PANEL AND MANUFACTURING METHOD OF THE SAME - The purpose of the present invention is to provide a plasma display panel containing black colored parts which have high resistant against degradation in blackness or peeling by high-temperature oxidation. The present invention provides a plasma display panel comprises: a front substrate and a rear substrate, edge portions of which are adhered to each other, the both substrates being provided opposite to each other; an electrode provided on the front substrate, a dielectric layer provided on the electrode; a protective layer provided on the dielectric layer; a black compound layer having an opening on the protective layer; an electrode and a dielectric layer provided on the rear substrate; a barrier rib holding a gap between the front substrate and the rear substrate; and a phosphor filled in a space formed by the barrier rib, wherein the black compound layer is formed on the front substrate side seen from the barrier rib, wherein the black compound layer comprises a mixture of a ceramics filler and a glass, and wherein the glass comprises a phosphate glass containing a transition metal element. | 10-02-2008 |
20080238821 | PLASMA DISPLAY PANEL - To prevent sucking of a sealing material in steps of sealing and exhaust of a plasma display panel. The plasma display panel includes a front substrate and a rear substrate, in which the peripheries thereof are sealed by a glass sealing material. A sealing portion formed by the glass sealing material is formed of a multi-layered structure including at least two types of glass with different softening points. The entirety or part of the sealing portion on an inner side of the panel is formed of glass with the highest softening point. Since the high-temperature softened glass serves as a barrier for preventing sucking of the low-temperature softened glass into the panel, it is possible to prevent sucking of the sealing material into the panel. This can improve image display characteristics. | 10-02-2008 |
20080315748 | Display Device - There is disclosed an FED (field emission display) capable of supplying an anode voltage, which is a high voltage, to an anode substrate with high reliability. A high voltage introduction button is sealed to a sealing plate, in which a contact spring is attached to the high voltage introduction button by spot welding. The high voltage introduction button has a flat portion connected to the contact spring, a sealing portion sealed to the glass substrate, and an external terminal to be connected to an external power source. The contact spring contacts an anode terminal of an anode substrate with an appropriate contact pressure, by a spring force from an arm portion of the contact spring. The anode terminal is formed of a conductive film containing metal particles. | 12-25-2008 |
20090009054 | Image display device and method of manufacturing the same - An MIM electron source is comprised of a lower electrode, an insulation film and an upper electrode. By depositing a coat film on the upper electrode through a sputter process using a sputter target of alkaline glass having a modifier component of an alkaline metal oxide or alkaline earth metal oxide, the work function of the upper electrode can be lowered. As a result, the electron emission efficiency can be increased stably. | 01-08-2009 |
20090199897 | GLASS COMPOSITION AND ITS APPLICATIONS - A glass composition substantially free from lead and bismuth and containing vanadium oxide and phosphor oxide as main ingredients, wherein the sintered glass of the glass composition exhibits 10 | 08-13-2009 |
20090200070 | Cu-BASED WIRING MATERIAL AND ELECTRONIC COMPONENT USING THE SAME - An object of the present invention is to provide an electronic component, including a wiring that contacts a glass or a glass ceramics member, for which a Cu-based wiring material capable of suppressing generation of bubbles in the glass or the glass ceramics member and having excellent migration resistance is used. The present invention provides an electronic component including a wiring that contacts a glass or a glass ceramics member. In the electronic component, the wiring material is formed of a binary alloy made of two elements of Cu and Al, and contains not more than 50.0% by weight of Al and a balance of unavoidable impurities. | 08-13-2009 |
20090267483 | FLUORESCENT LAMP - An object of the present invention is to provide fluorescent lamps used as a light source for liquid crystal display devices, which have excellent characteristics in terms of preventing solarization, the properties for blocking ultraviolet rays, and the physical and thermal strength, and preventing scratching. The present invention provides fluorescent lamps made of glass containing 55.0% to 75.0% of SiO | 10-29-2009 |
20100151323 | ELECTRODE, ELECTRODE PASTE AND ELECTRONIC PARTS USING THE SAME - The objects of the present invention are to provide a copper-base electrode which can be calcined in an oxidative atmosphere, e.g., in air, like a silver electrode, and is less expensive than a silver electrode; an electrode paste; and electronic parts using it. The other objects of the present invention are to provide a copper-base electrode which can be calcined in an inert gas atmosphere, e.g., in nitrogen, at low temperature; an electrode paste; and electronic parts using it. | 06-17-2010 |
20100180934 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME AND ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 07-22-2010 |
20100307802 | Wiring Member, Method of Manufacturing the Wiring Member and Electronic Element - A wiring member comprising a substrate, a copper wiring layer having an electrical resistivity of not larger than 4×10 | 12-09-2010 |
20110001094 | ELECTROCONDUCTIVE MATERIAL AND POSITIVE ELECTRODE MATERIAL FOR LITHIUM ION SECONDARY BATTERY USING THE SAME - Disclosed is an electroconductive material which contains at least a vanadium oxide and a phosphorus oxide, and has a crystalline structure composed of a crystalline phase and an amorphous phase, in which the crystalline phase contains a monoclinic vanadium-containing oxide, and a volume of the crystalline phase is larger than that of the amorphous phase. | 01-06-2011 |
20110217592 | CATHODE FOR LITHIUM-ION SECONDARY BATTERY, LITHIUM-ION SECONDARY BATTERY, VEHICLE AND POWER STORAGE SYSTEM EQUIPPED WITH THE BATTERY - A cathode for a lithium-ion secondary battery is provided, which not only efficiently absorbs oxygen released from a solid solution based cathode active material when initial charging is applied but prevents a cathode energy density from lowering. Further, a lithium-ion secondary battery, a vehicle and a power storage system equipped with the lithium-ion secondary battery are provided. The cathode for a lithium-ion secondary battery comprises a cathode active material represented by the general formula: xLi | 09-08-2011 |
20110315937 | CONDUCTIVE PASTE AND ELECTRONIC PART EQUIPPED WITH ELECTRODE WIRING FORMED FROM SAME - Provided is a conductive paste which contains an inexpensive metal, such as copper or aluminum, as an electrode wiring material and has oxidation resistance that enables the paste to withstand a high-temperature process performed in an oxidizing atmosphere and an electronic part equipped with electrode wiring formed from the paste. The electronic part in accordance with the present invention is equipped with electrode wiring that comprises a conductive glass phase containing transition metals and phosphorus, metal particles, and none of the substances prohibited by the RoHS directive. The electronic part is characterized in that each of the transition metals contained in the conductive glass phase is present in the state of having a plurality of oxidation numbers and that the proportion of the atoms which have the largest oxidation number for each transition metal satisfies a given relationship. | 12-29-2011 |
20120063076 | GLASS COMPOSITION AND COVERING AND SEALING MEMBERS USING SAME - A glass composition according to the present invention comprises: transition metals; phosphorus; barium; and zinc, the transition metals including: vanadium; and tungsten and/or iron, the glass composition not containing substances included in the JIG level A and B lists, an softening point of the glass composition being from 430 to 530° C., an average linear expansion coefficient of the glass composition being from 6 to 9 ppm/° C. at temperatures from 30 to 250° C. | 03-15-2012 |
20120067415 | GLASS COMPOSITION, ELECTRICALLY CONDUCTIVE PASTE COMPOSITION COMPRISING SAME, ELECTRODE WIRING MEMBER, AND ELCTRONIC COMPONENT - A glass composition according to the present invention comprises: phosphorus, vanadium and at least one transition metal selected from a group consisting of tungsten, iron, and manganese, the glass composition not containing substances included in the JIG level A and B lists, a softening point of the glass composition being 550° C. or lower. | 03-22-2012 |
20120125670 | Cu-Al ALLOY POWDER, ALLOY PASTE UTILIZING SAME, AND ELECTRONIC COMPONENT - In an electronic component having a wiring and/or an electrode prepared through firing of a paste or in an electronic component having a wiring in contact with a glass or glass ceramic member, provided is an electronic component using a Cu-based wiring material which less suffers from increase in electric resistance due to oxidation, which less causes bubbles in the glass or glass ceramic, and has satisfactory migration resistance. The Cu—Al alloy powder includes a Cu—Al alloy powder including Cu and, preferably, 50 percent by weight or less of Al; and an aluminum oxide film having a thickness of 80 nm or less and being present on the surface of the Cu—Al alloy powder. The powder, when compounded with a glass or glass ceramic material to give a paste, can be used to form wiring (interconnections), electrodes, and/or contact members. | 05-24-2012 |
20120161273 | THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric conversion material is provided, in which only a desired crystal is selectively precipitated. An M | 06-28-2012 |
20120164537 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND MAGNESIUM SECONDARY BATTERY USING THE SAME - In a positive electrode active material for a magnesium secondary battery and a magnesium secondary battery using it, there is contained a powder particle containing a crystal phase having a structure formed with aggregation of a plurality of crystallites, and amorphous phases formed between the crystallites themselves; the amorphous phases contain at least one kind of a metal oxide selected from a vanadium oxide, an iron oxide, a manganese oxide, a nickel oxide and a cobalt oxide; and the crystal phase and the amorphous phases use the positive electrode active material enabling to store and release magnesium ions. | 06-28-2012 |
20120285733 | ELECTRONIC COMPONENT PROVIDED WITH CU-AL-CO-BASED ALLOY ELECTRODE OR WIRING - An object of the present invention is to provide an electronic component using a Cu-based conductive material that can suppress oxidization even in a heat treatment in an oxidizing atmosphere and that can suppress an increase in an electrical resistance. In an electronic component having an electrode or a wiring, a ternary alloy made from three elements consisting of Cu, Al, and Co is used as a Cu-based wiring material that can prevent oxidization of the electrode or the wiring. Specifically, part or the whole of the electrode or the wiring has a chemical composition in which an Al content is 10 at % to 25 at %, a Co content is 5 at % to 20 at %, and the balance is composed of Cu and unavoidable impurities, and the chemical composition represents a ternary alloy in which two phases of a Cu solid solution formed by Al and Co being dissolved into Cu and a CoAl intermetallic compound coexist together. | 11-15-2012 |
20120318559 | ELECTRONIC COMPONENT, CONDUCTIVE PASTE, AND METHOD FOR MANUFACTURING AN ELECTRONIC COMPONENT - The conductive paste contains the following dispersed in a binder resin dissolved in a solvent: a plurality of particles comprising aluminum and/or an aluminum-containing alloy; and an oxide-comprising powder. The oxide contains vanadium with a valence no greater than 4 and a glass phase. In the method for manufacturing an electronic component, the conductive paste is applied to a substrate and fired, forming electrode wiring. The electronic component is provided with electrode wiring that has: a plurality of particles comprising aluminum and/or an aluminum-containing alloy; and an oxide affixing the particles to a substrate. The oxide contains vanadium with a valence no greater than 4. A compound layer containing vanadium and aluminum is formed on the surfaces of the particles, and the vanadium in the compound layer includes vanadium with a valence no greater than 4. This results in an electrode wiring with high reliability and water resistance. | 12-20-2012 |
20130015410 | POSITIVE ELECTRODE ACTIVE MATERIALAANM Hashiba; YujiAACI NaritaAACO JPAAGP Hashiba; Yuji Narita JPAANM Yoshimura; KeiAACI InzaiAACO JPAAGP Yoshimura; Kei Inzai JPAANM Tachizono; ShinichiAACI NaritaAACO JPAAGP Tachizono; Shinichi Narita JPAANM Naito; TakashiAACI FunabashiAACO JPAAGP Naito; Takashi Funabashi JPAANM Aoyagi; TakuyaAACI HitachiAACO JPAAGP Aoyagi; Takuya Hitachi JPAANM Fujieda; TadashiAACI MitoAACO JPAAGP Fujieda; Tadashi Mito JP - A lithium ion secondary battery has a high cycle retention rate, and has its battery capacity increased. A positive electrode active material is used which includes a crystal phase having a structure formed by collecting a plurality of crystallites | 01-17-2013 |
20130126864 | SEMICONDUCTOR JUNCTION ELEMENT, SEMICONDUCTOR DEVICE USING IT, AND MANUFACTURING METHOD OF SEMICONDUCTOR JUNCTION ELEMENT - In order to provide a semiconductor junction element consisted of an oxide semiconductor glass, which does not contain a toxic element and rare metal element, and various semiconductor devices using it, semiconductor glasses which contain vanadium oxide and have different polarities are connected each other in a semiconductor junction element of the present invention. Moreover, a semiconductor glass containing vanadium oxide is connected to an element semiconductor or a compound semiconductor which have different polarity from the semiconductor glass. Furthermore, a semiconductor glass containing vanadium oxide is connected to a metal. | 05-23-2013 |
20130260095 | GLASS SUBSTRATE HAVING FINE STRUCTURES ON THE SURFACE THEREOF - A glass substrate having a fine structure on the surface thereof, wherein said glass substrate is made of vanadium-containing glass and said vanadium-containing glass has a resistivity no higher than 10 | 10-03-2013 |
20130333748 | LOW SOFTENING POINT GLASS COMPOSITION, BONDING MATERIAL USING SAME ADN ELECTRONIC PARTS - A low softening point glass composition, which is substantially free from lead, bismuth and antimony and comprises oxides of vanadium, phosphorous, tellurium and iron, a softening point of the composition being 380° C. or lower. | 12-19-2013 |