Patent application number | Description | Published |
20090201717 | RESISTANCE-CHANGE MEMORY - A resistance-change memory includes first and second bit lines running in the same direction, a third bit line running parallel to the first and second bit lines, fourth and fifth bit lines running in the same direction, a sixth bit line running parallel to the fourth and fifth bit lines, a first memory element which has one and the other terminals connected to the first and third bit lines, and changes to one of first and second resistance states, a first reference element having one and the other terminals connected to the fourth and sixth bit lines, and set in the first resistance state, a second reference element having one and the other terminals connected to the fifth and sixth bit lines, and set in the second resistance state, and a sense amplifier having first and second input terminals connected to the first and fourth bit lines. | 08-13-2009 |
20100124116 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - Memory strings includes: a first semiconductor layer including a columnar portion extending in a direction perpendicular to a substrate; a first electric charge storage layer formed to surround a side surface of the columnar portion; and a first conductive layer formed to surround the first electric charge storage layer. First selection transistors includes: a second semiconductor layer extending upward from a top surface of the columnar portion; a second electric charge storage layer formed to surround a side surface of the second semiconductor layer; and a second conductive layer formed to surround the second electric charge storage layer. The non-volatile semiconductor storage device further includes a control circuit that causes, prior to reading data from a selected one of the memory strings, electric charges to be accumulated in the second electric charge storage layer of one of the first selection transistors connected to an unselected one of the memory strings. | 05-20-2010 |
20100172189 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current. | 07-08-2010 |
20100214838 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes a control circuit performing an erase operation to erase data from a selected one of memory transistors. The control circuit applies a first voltage to the other end of selected one of selection transistors, causes the selected one of the selection transistors to turn on, and causes any one of the memory transistors to turn on that is closer to the selection transistor than the selected one of the memory transistors. The control circuit also applies a second voltage lower than the first voltage to a gate of the selected one of the memory transistors. Such a potential difference between the first voltage and the second voltage causing a change in electric charges in the electric charge storage layer. | 08-26-2010 |
20100232224 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A memory cell array has plural memory strings arranged therein, each of which including a plurality of electrically-rewritable memory transistors and selection transistors. Each memory string includes a body semiconductor layer including four or more columnar portions, and a joining portion formed to join the lower ends thereof. An electric charge storage layer is formed to surround a side surface of the columnar portions. A first conductive layer is formed to surround a side surface of the columnar portions as well as the electric charge storage layer. A plurality of second conductive layers are formed on side surfaces of the joining portion via an insulation film, and function as control electrodes of a plurality of back-gate transistors formed at a respective one of the joining portions. | 09-16-2010 |
20110063916 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - At least some of the memory transistors included in a first memory string are commonly connected to first conductive layers that are connected to at least some of the memory transistors included in a second memory string connected to the same third and fourth conductive layers as the first memory string. At least one of either the memory transistors or the back-gate transistor in the first memory string and at least one of either the memory transistors or the back-gate transistor in the second memory string are connected to the independent first or fifth conductive layers, respectively. | 03-17-2011 |
20120176836 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a non-volatile semiconductor memory device comprises memory strings. Each memory string comprises a semiconductor layer, control gates, a first selection gate, and a second selection gate. A semiconductor layer comprises a pair of pillar portions which extend in a vertical direction to a substrate, and a coupling portion formed to couple the pair of pillar portions. Control gates orthogonally intersect one of the pair of pillar portions or the other of the pair of pillar portions. A first selection gate orthogonally intersects one of the pair of pillar portions and is formed above the control gates. A second selection gate orthogonally intersects the other of the pair of pillar portions, is formed above the control gates, and is on the same level as the first selection gate as well as integrated with the first selection gate. | 07-12-2012 |
20120218821 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device includes: a memory string including a plurality of memory cells connected in series; a first selection transistor having one end connected to one end of the memory string; a first wiring having one end connected to the other end of the first selection transistor; a second wiring connected to a gate of the first selection transistor. A control circuit is configured to boost voltages of the second wiring and the first wiring in the erase operation, while keeping the voltage of the first wiring greater than the voltage of the second wiring by a certain potential difference. The certain potential difference is a potential difference that causes a GIDL current. | 08-30-2012 |
20120243314 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to one aspect includes a semiconductor substrate, a memory string, a plurality of first conductive layers, a second conductive layer, and a third conductive layer. The memory string has a plurality of memory cells, a dummy transistor and a back gate transistor connected in series in a direction perpendicular to the semiconductor substrate. The plurality of first conductive layers are electrically connected to gates of the memory cells. The second conductive layer is electrically connected to a gate of the dummy transistor. The third conductive layer is electrically connected to a gate of the back gate transistor. The second conductive layer is short-circuited with the third conductive layer. | 09-27-2012 |
20120243326 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a device includes transistors each with a path connected to a bit line, and circuits each includes a switch, the circuit being connected to the bit line. The device includes a amplifier connected to the transistor and to the circuit, and a latch connected to the amplifier to hold first data before read is carried out on a cell and to hold second data if a current equal to or a larger than a predetermined value flows via the bit line. In the device, the switch is turned on or off depending on data held in another latch located adjacently in a direction of the word lines, to control a connection between the bit line and connected to another bit line the amplifier via the circuit. | 09-27-2012 |
20130070528 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a memory cell array, a bit line, a source line, and a sense circuit. The memory cell array includes memory strings which include memory cells connected in series and stacked above a semiconductor substrate. The bit line is coupled to one of the memory strings and is capable of transferring data. The source line is coupled to one of the memory strings. When data is read, a read current flows from a bit line into the source line. The sense circuit is coupled to the bit line and senses read data. An operation timing of the sense circuit is determined on the basis of a current flowing through the source line. | 03-21-2013 |
20130336064 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block. | 12-19-2013 |
20140092684 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block. | 04-03-2014 |
20150371710 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - When selectively erasing one sub-block, a control circuit applies, in a first sub-block, a first voltage to bit lines and a source line, and applies a second voltage smaller than the first voltage to the word lines. Then, the control circuit applies a third voltage lower than the first voltage by a certain value to a drain-side select gate line and a source-side select gate line, thereby performing the erase operation in the first sub-block. The control circuit applies, in a second sub-block existing in an identical memory block to the selected sub-block, a fourth voltage substantially identical to the first voltage to the drain side select gate line and the source side select gate line, thereby not performing the erase operation in the second sub-block. | 12-24-2015 |
Patent application number | Description | Published |
20090004042 | Titanium Alloy for Corrosion-Resistant Materials - An object is to provide a titanium alloy for corrosion-resistant materials that is capable of being produced at low cost while maintaining the capability to suppress the deterioration of corrosion resistance. According to the present invention, there is provided a titanium alloy for corrosion-resistant materials, which contains 0.01-0.12% by mass in total of at least one of platinum group elements, at least one of Al, Cr, Zr, Nb, Si, Sn and Mn, and the residue comprising Ti and impurities, in which the total content of Al, Cr, Zr, Nb, Si, Sn and Mn is 5% by mass or less. | 01-01-2009 |
20090060777 | Ti Alloy, Ti Alloy Member and Method of Manufacturing the Same - Disclosed are a Ti alloy having an excellent hydrogen absorption inhibition effect, a Ti alloy member using the Ti alloy, and a manufacturing thereof. A Ti alloy is characterized in that it contains 0.1 to 5.0% by mass in total of at least one of Zr and Hf, and a residue comprising Ti and impurities. | 03-05-2009 |
20100310410 | TITANIUM ALLOY FOR CORROSION-RESISTANT MATERIALS - There is provided a titanium alloy for corrosion-resistant materials, which contains 0.01-0.12% by mass in total of at least one of platinum group elements; at least Si and one of, or both of, Sn and Mn, selected from the group consisting of Al, Cr, Zr, Nb, Si, Sn and Mn, wherein the total content of Al, Cr, Zr, Nb, Si, Sn and Mn is 5% by mass or less; and the residue comprising Ti and impurities. | 12-09-2010 |
20130215313 | MOBILE TERMINAL AND IMAGING KEY CONTROL METHOD - A mobile phone comprises a display, etc. If a camera function is performed, a through image (preview image) based on an imaging parameter value, a shutter key, etc. are displayed on the display. A RAM is registered in advance with imaging parameter value brought into correspondence to a coordinates range. When a predetermined time period elapses after a touch operation is made to the shutter key, an auxiliary key corresponding to the coordinates range is displayed. If a user moves a finger into the coordinates range based on the displaying of the auxiliary key, a current imaging parameter value is changed to a registered imaging parameter value. If the finger is released in such a state, an image imaged based on a changed imaging parameter value. | 08-22-2013 |
Patent application number | Description | Published |
20100253011 | SPHERICAL ANNULAR SEAL MEMBER AND METHOD OF MANUFACTURING THE SAME - A spherical annular base member | 10-07-2010 |
20100306421 | DMA TRANSFER DEVICE - A source address setting detector acquires a DMA source address from a transfer start address setting for a DMA source area of a plurality of register settings for a DMAC which are made by a master. A read-ahead processor reads ahead data in a resource which is specified by the DMA source address before the DMAC starts DMA transfer, and further, increments the DMA source address to repeat read-ahead operation. The DMAC starts DMA transfer if the master completes the register settings, reads data in the DMA source area which has already been read ahead in the read-ahead processor, and transfers the data to a DMA destination area in the resource. | 12-02-2010 |
20120042105 | BUS ARBITRATION APPARATUS - An arbitration circuit | 02-16-2012 |
20130336056 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - A control circuit for a nonvolatile semiconductor storage device, during a write operation, configures multiple bit lines so that bit lines that are adjacent to select bit lines are nonselect bit lines. The control circuit applies a first voltage to a write bit line that is included in the select bit lines, and also applies a second voltage that is higher than the first voltage, to a write inhibit bit line that is included in the select bit lines. Then, the control circuit applies a third voltage that is higher than the second voltage to the nonselect bit lines. As a result, the control circuit raises the voltage of the write inhibit bit line, while maintaining the write bit line at the first voltage. Next, the control circuit applies a fourth voltage for the write operation to the drain-side select gate line. | 12-19-2013 |
20140063972 | SEMICONDUCTOR STORAGE DEVICE - According to one embodiment, a storage device includes multiple cell transistors connected in series, a first selecting transistor connected between a first end of the connected cell transistors and a first line, and a second selecting transistor connected between a second end of the connected cell transistors and a second line. Writing to the multiple cell transistors is includes the following operations: a first voltage is applied to a gate of the first selecting transistor, and a second voltage lower than the first voltage is applied to the gate of the second selecting transistor; a verify voltage is applied to a selected word line, and a pass voltage is applied to non-selected word lines. A third voltage lower than the first voltage is then applied to the gate of the first selecting transistor, and a program voltage is applied to the selected word line. | 03-06-2014 |
20140241063 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a memory string including first and second selection transistors, and first and second groups of memory cell transistors connected in series between the first and second selection transistors; a bit line and a source line respectively connected to the first and second selection transistors; first word lines respectively connected to gates of the memory cell transistors in the first group; second word lines respectively connected to gates of the memory cell transistors in the second group; first transfer transistors respectively connected to the first word lines; second transfer transistors respectively connected to the second word lines; and a control unit configured to apply a first control voltage to gates of the first transfer transistors and a second control voltage lower than the first control voltage to gates of the second transfer transistors when data is being written to memory cell transistors in the first group. | 08-28-2014 |
20140269094 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a plurality of memory cells, a plurality of bit lines, each of which is electrically connected to a string of the memory cells, and a sense module provided for each of the bit lines. Each sense module includes a sense transistor that is configured to turn on and off to indicate whether or not data is stored in a memory cell that is targeted by a reading operation, the sense transistor having a threshold voltage level and a gate that is connected to a sense node, the sense node being connected to a discharge line through a series of transistors including the sense transistor so that prior to a sensing operation the sense node can be discharged to a level that is set in accordance with a threshold voltage thereof. | 09-18-2014 |
Patent application number | Description | Published |
20100149603 | IMAGE READING APPARATUS - An image reading apparatus includes: a partial pre-scanning device configured to convey a reading unit in an edge detection area and causes the reading unit to execute a reading operation in the edge detection area, the edge detection area being a partial area within a scannable area on a platen, and a detecting device configured to detect a plurality of edge pixels on a basis of image data, the plurality of edge pixels representing a side of a document, the image data being outputted by the reading unit that reads the edge detection area through execution of the reading operation by the partial pre-scanning device. Upon the plurality of edge pixels not detected on the basis of the image data, the partial pre-scanning device moves the edge detection area in a conveying direction of the reading unit and causes the reading unit to execute the reading operation. | 06-17-2010 |
20100165424 | IMAGE READING DEVICE HAVING IMAGE SENSOR - The image reading device includes a first document member, a white reference plate, an image sensor, a conveying section, and a control section. A first document is placed on the first document member. The image sensor reads the first document placed on the first document member. The conveying section conveys the image sensor in a first direction and a second direction opposite to the first direction. The image sensor reads the first document while being moved in the first direction. The control section executes a first control. The first control executes a process to control the image sensor to read the white reference plate, to control the conveying section to move the image sensor in the second direction, to control the conveying section to start moving the image sensor in the first direction, and to control the image sensor to read the first document, in this order. | 07-01-2010 |
20120081761 | IMAGE READER CAPABLE OF DETECTING BLANK DOCUMENT SHEET - An image reader includes a reading unit that is configured to read an image on a document sheet to generate read data, a counting unit that is configured to count a number of pixels of the read data having more than a predetermined gray level, a determining unit that determines that the document sheet is blank when the number of pixels counted by the counting unit is not exceeding a threshold value, a display unit that is configured to display the number of pixels counted by the counting unit and the threshold value when the document sheet has been determined to be blank, in a manner that the number of pixels can be compared with the threshold value, and a changing unit that changes the threshold value. | 04-05-2012 |
20130083365 | Image-Reading Device and Computer-Readable Storage Medium - An image-reading device may include a conveyor, a reading unit, and a control device. The control device may be configured to extract feature points from an area between a first edge and a line, obtain the density of the extracted feature points, and compare the density to a threshold. The control device may be further configured to identify the first edge as a document leading edge or a document trailing edge based on the comparison result. | 04-04-2013 |
20130258425 | IMAGE READING DEVICE STABILIZING QUALITIES OF READ IMAGES - An image reading device includes a conveying unit, reading unit, and a control unit. The conveying unit conveys successive two sheets along a conveying path such that a gap is formed between the successive two sheets. The reading unit reads a sheet conveyed at a reading position in the conveying path. The reading unit has a light source and light-receiving unit. The control unit controls the light source to emit light at a first light intensity for a sheet that has reached the reading position. The light-receiving unit receives light reflected by the sheet present at the reading position. The control unit further controls the light source to emit a light at a second light intensity lower than the first light intensity during a period of time from when the reading unit has been read the preceding sheet to when the reading unit begins reading the subsequent sheet. | 10-03-2013 |
20140063518 | SHEET CONVEYING DEVICE CAPABLE OF DISCHARGING SHEET FROM CONVEYING PATH AT STARTUP - A sheet conveying device includes: a conveying unit; a nonvolatile memory; and a controller. The conveying unit is configured to convey a sheet along a conveying path. The controller is configured to control the conveying unit to convey the sheet, store position data in the nonvolatile memory during conveyance of the sheet, determine whether or not the sheet conveying device is started, and drive the conveying unit for an amount determined by the position data if the sheet conveying device is started. The conveying path is divided into a plurality of segments. The position data identifies a segment in which the sheet stays. The more downstream the segment identified by the position data is in the conveying path, the smaller the amount determined by the position data is. | 03-06-2014 |
20140138897 | IMAGE READING APPARATUS HAVING CONVEYANCE ROLLERS CONVEYING ORIGINAL SHEET - In an image reading apparatus, it is judged whether an original sheet is a first sheet type, whose sheet length is longer than or equal to a first conveyance distance and shorter than a second conveyance distance, and a second sheet type, whose sheet length is longer than or equal to the second conveyance path, the first conveyance distance being a distance between a first conveyance roller and a second conveyance roller, the second conveyance distance being a distance between a supply roller and the second conveyance roller. At least one of a leading-edge arriving timing; a trailing-edge arriving timing; and a sub-scanning magnification is set dependently on the judged result. An image is read from the original sheet by using an image reading unit and a conveyance unit based on the set at least one of the leading-edge arriving timing; trailing-edge arriving timing; and sub-scanning magnification. | 05-22-2014 |
20140138898 | IMAGE READING APPARATUS THAT READS ORIGINAL SHEET WHILE CONVEYING THE SAME - In an image reading apparatus, it is judged whether an original sheet is either one of a first sheet type, whose sheet length is longer than or equal to a first conveyance distance and shorter than a second conveyance distance, and a second sheet type, whose sheet length is longer than or equal to the second conveyance path, the first conveyance distance being distance between a first conveyance roller and a second conveyance roller, the second conveyance distance being distance between a supply roller and the second conveyance roller. The original sheet is conveyed at a separation timing, when the original sheet separates away from the supply roller, at a speed that is smaller for a case where the original sheet is of the first sheet type than for a case where the original sheet is of the second sheet type. An image is read from the conveyed original sheet. | 05-22-2014 |
20150307098 | VEHICLE CONTROL APPARATUS - A vehicle control apparatus is disclosed, which includes a processing device that calculates a target acceleration such that a vehicle speed of a vehicle, which includes a continuously variable transmission, becomes a target vehicle speed; sets a threshold for a change amount of an engine rpm based on the target acceleration; and controls the engine rpm such that the change amount of the engine rpm does not exceed the threshold. | 10-29-2015 |
Patent application number | Description | Published |
20090242968 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and a plurality of through holes extending in the stacking direction are formed in a matrix configuration. A shunt interconnect and a bit interconnect are provided above the stacked body. Conductor pillars are buried inside the through holes arranged in a line immediately below the shunt interconnect out of the plurality of through holes, and semiconductor pillars are buried inside the remaining through holes. The conductive pillars are formed from a metal, or low resistance silicon. Its upper end portion is connected to the shunt interconnect and its lower end portion is connected to a cell source formed in an upper layer portion of the silicon substrate. | 10-01-2009 |
20120043601 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and a plurality of through holes extending in the stacking direction are formed in a matrix configuration. A shunt interconnect and a bit interconnect are provided above the stacked body. Conductor pillars are buried inside the through holes arranged in a line immediately below the shunt interconnect out of the plurality of through holes, and semiconductor pillars are buried inside the remaining through holes. The conductive pillars are formed from a metal, or low resistance silicon. Its upper end portion is connected to the shunt interconnect and its lower end portion is connected to a cell source formed in an upper layer portion of the silicon substrate. | 02-23-2012 |
20120187863 | LIGHT SOURCE LIGHTING DEVICE AND LUMINAIRE - A power supply circuit drives circuits having different numbers of series-connected LEDs without changing a circuit constant or a component. An LED series circuit is connected to a power converter circuit of a power supply circuit. The power converter circuit is controlled by a control arithmetic circuit, and supplies a constant current to the LED series circuit. A voltage detection circuit detects a voltage applied to the LED series circuit. The control arithmetic circuit checks whether the LED series circuit has 40 LEDs or 20 LEDs, based on the voltage detected by the voltage detection circuit. The control arithmetic circuit holds a constant-current value table for 40 LEDs and a constant-current value table for 20 LEDs. In accordance with the detected voltage, the control arithmetic circuit selects one constant-current value table, and controls the power converter circuit based on the constant-current value table selected. | 07-26-2012 |
20140361357 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING PILLARS BURIED INSIDE THROUGH HOLES SAME - In a nonvolatile semiconductor memory device, a stacked body is formed by alternately stacking dielectric films and conductive films on a silicon substrate and a plurality of through holes extending in the stacking direction are formed in a matrix configuration. A shunt interconnect and a bit interconnect are provided above the stacked body. Conductor pillars are buried inside the through holes arranged in a line immediately below the shunt interconnect out of the plurality of through holes, and semiconductor pillars are buried inside the remaining through holes. The conductive pillars are formed from a metal, or low resistance silicon. Its upper end portion is connected to the shunt interconnect and its lower end portion is connected to a cell source formed in an upper layer portion of the silicon substrate. | 12-11-2014 |
Patent application number | Description | Published |
20090173711 | CONTAINER - If the diameter of an opening side neck portion is decreased to minimize the contact surface between contents and air and a small cap is fitted on a container where there is the concern that exposure to air may alter the quality of contents in the container, there is not only the problem that a gap results between the cap top board and the container opening where adequate locking force is not available but the problem that force is required to open and close the lid, making removal and fitting troublesome. | 07-09-2009 |
20090200258 | CAP LOCKING DEVICE - Conventionally, to lock a cap onto a container with a minute interval of degree rotation, it is necessary to provide a large number of engaging teeth at minute intervals and to engage minute locking teeth thereto, but there is the problem that adequate locking force is not attained so the lock is disconnected, making a secure lock impossible. There is also the problem that high-precision forming technology is required, making it difficult to provide the neck or shoulders of a container with teeth using a plastic blow-forming process. | 08-13-2009 |
20110254699 | VEHICLE-MOUNTED NARROW-BAND WIRELESS COMMUNICATION APPARATUS AND ROADSIDE-TO-VEHICLE NARROW-BAND WIRELESS COMMUNICATION SYSTEM - A vehicle-mounted narrow-band wireless communication apparatus includes: information storing/managing section | 10-20-2011 |
20120242505 | ROAD-VEHICLE COOPERATIVE DRIVING SAFETY SUPPORT DEVICE - When a decision is made that it is necessary to call driver's attention as a result of analyzing driving safety support information received by a roadside device information receiving unit | 09-27-2012 |
20120282493 | GLASS SUBSTRATE FOR A MAGNETIC DISK, MAGNETIC DISK AND METHOD OF MANUFACTURING A MAGNETIC DISK - A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less. | 11-08-2012 |
20130092025 | DEFECTLESS HYDROGEN SEPARATION MEMBRANE, PRODUCTION METHOD FOR DEFECTLESS HYDROGEN SEPARATION MEMBRANE AND HYDROGEN SEPARATION METHOD - A defect-free hydrogen separation membrane includes a metal thin membrane. The metal thin membrane includes a first metal layer composed of palladium on a porous support without substantial penetration into surface pores of the porous support and a second metal layer on the first metal layer. The second metal layer is a product of palladium deposition and closes defects being open on the surface of the first metal layer. | 04-18-2013 |
20130245945 | NAVIGATION DEVICE, RECOMMENDED SPEED ARITHMETIC DEVICE, AND RECOMMENDED SPEED PRESENTATION DEVICE - Disclosed is a navigation device including a traveling route estimating unit | 09-19-2013 |
20140085750 | GLASS SUBSTRATE FOR A MAGNETIC DISK, MAGNETIC DISK AND METHOD OF MANUFACTURING A MAGNETIC DISK - A glass substrate for a magnetic disk, wherein, in regions with respect to two places arbitrarily selected on a surface of the glass substrate on its central portion side relative to its outer peripheral end, a surface shape with a shape wavelength in a band of 60 to 500 μm is extracted from surface shapes in each of the regions and, assuming that a root mean square roughness Rq of the surface shape is given as a microwaviness Rq, the difference between the microwavinesses Rq of the regions is 0.02 nm or less or the difference between standard deviations of the microwavinesses Rq of the regions is 0.04 nm or less. | 03-27-2014 |
20140191884 | VEHICLE-MOUNTED COMMUNICATION DEVICE AND NAVIGATION DEVICE EQUIPPED WITH THIS VEHICLE-MOUNTED COMMUNICATION DEVICE, COMMUNICATION DEVICE FOR PEDESTRIANS AND NAVIGATION DEVICE EQUIPPED WITH THIS COMMUNICATION DEVICE FOR PEDESTRIANS, AND PEDESTRIAN-TO-VEHICLE COMMUNICATION SYSTEM - Disclosed is a vehicle-mounted communication device that carries out radio communications with a communication device for pedestrians which is carried by a pedestrian, the vehicle-mounted communication device including: a receiver that receives pedestrian information showing whether the pedestrian belongs to a pedestrian group formed of the pedestrian and a plurality of pedestrians in the vicinity of the pedestrian from the communication device for pedestrians; a controller that judges the pedestrian information received by the receiver and issues a command to present pedestrian attention information when the pedestrian information shows that the pedestrian does not belong to a pedestrian group; and an information outputter that presents the pedestrian attention information according to the command from the controller. Therefore, the vehicle-mounted communication device enables the driver to certainly recognize the existence of a pedestrian not belonging to a pedestrian group. | 07-10-2014 |
20140287269 | GLASS SUBSTRATE FOR A MAGNETIC DISK AND MAGNETIC DISK - Provided are a magnetic disk substrate and a method of manufacturing the same, wherein the magnetic disk substrate has very few defects present on its surface with an arithmetic mean roughness (Ra) at a level in the vicinity of 0.1 nm and thus is suitable as a substrate for a magnetic disk with high recording density. The magnetic disk glass substrate is such that the arithmetic mean roughness (Ra) of the main surface of the glass substrate measured using an atomic force microscope with a resolution of 256×256 pixels in a 2 μm×2 μm square is 0.12 nm or less and the number of defects detected to have a size of 0.1 μm to 0.6 μm in plan view and a depth of 0.5 nm to 2 nm is less than 10 per 24 cm | 09-25-2014 |
20140299239 | STAINLESS STEEL AND METHOD FOR MANUFACTURING SAME - Martensitic mixed phase stainless steel, which has in well balance between excellent strength and formability and excellent fatigue properties, and is inexpensive, and suitable for spring members, has: a chemical composition comprising C: 0.1-0.4%, Si: at most 2.0%, Mn: 0.1-6.0%, Cr: 10.0-28.0%, N: at most 0.17%, the remainder of Fe and impurities, and a metallurgical structure which includes a ferrite phase and a martensitic phase, and also a retained austenite phase of 5 volume % or less if necessary, and which satisfies a relationship of C | 10-09-2014 |
20150152538 | TITANIUM THIN SHEET - A titanium thin sheet of 0.2 mm or less in thickness, containing: Fe of 0.1 mass % or less and O (oxygen) of 0.1 mass % or less in a bulk, wherein a sheet thickness (mm)/a grain size (mm) ≧3, and the grain size ≧2.5 μm are satisfied, and a hardened layer is included at a surface, and a region of the hardened layer is a depth of 200 nm or more and 2 μm or less from the surface. The titanium thin sheet is supplied with excellent workability and high surface hardness, and is able to be suitably used for various purposes such as, for example, acoustic components (a speaker vibration plate and so on). | 06-04-2015 |
20160086486 | DRIVE ASSIST APPARATUS - Provided is a drive assist apparatus: based on signal indication information on a traffic signal installed at at least one intersection located ahead of a self-vehicle in a travelling direction of the self-vehicle, distance information from the self-vehicle to the at least one intersection, and a running speed of the self-vehicle, a recommended speed at which the self-vehicle can pass through the at least one intersection during a period in which the traffic signal installed at the at least one intersection is green is calculated and is notified to the driver. In addition, when a difference obtained by subtracting an actual running distance from a predicted running distance in a case where the self-vehicle runs at the recommended speed exceeds a first threshold value, it is determined that the road has a traffic jam and the notification of the recommended speed is terminated. | 03-24-2016 |