Takashi Kano
Takashi Kano, Tokyo JP
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20100300168 | Method for Shot Peening - The object of the present invention is to provide a method for shot peening by which a compressive residual stress that is higher than any achieved by the conventional method can be achieved while the thickness of the processed material that is scraped is suppressed. The method is characterized in that the shot materials are shot against the processed material that has the hardness of 750 HV or more that is calculated from equations (1) to (3) below. The shot materials have Vickers hardness that is higher than the hardness of the processed material by 50 HV to 250 HV. The thickness of the processed material that is to be scraped is suppressed to 5 μm or less. | 12-02-2010 |
20110132138 | NITROCARBURIZED CRANKSHAFT MEMBER AND STEEL FOR NITROCARBURIZED CRANKSHAFTS - A nitrocarburized crankshaft member made of a steel that includes C in an amount by weight of 0.25 to 0.32% as a required element and an optional element that may be included, and Fe and inevitable impurities in a remaining portion. The steel-made crankshaft member mainly includes ferrite and perlite, wherein at least a portion of the steel surface thereof having a ferrite surface area of 50% or greater is imparted with a nitrocarburized hard layer. The nitrocarburized hard layer includes a surface compound layer suppressed to a thickness of 10 to 35 μm, and a nitrogen diffusion zone below the surface compound layer having a diffusion depth of 700 μm or greater. The steel includes C, Si, Mn, Cu, Ni, and Cr as the required elements and Mo, N, s-Al, and Ti as the optional elements. | 06-09-2011 |
20150083279 | NITROCARBURIZED CRANKSHAFT MEMBER AND STEEL FOR NITROCARBURIZED CRANKSHAFTS - A nitrocarburized crankshaft member made of a steel having essentially ferrite and perlite, and at least a portion of a steel surface thereof having a ferrite surface area of 50% or greater that is imparted with a nitrocarburized hard layer. The steel consists of C, Si, Mn, Cu, Ni, and Cr as required elements and Mo, N, s-Al, Ti, Pb, Bi, and Ca as optional elements that may be included, and Fe and inevitable impurities. C is within a range of 0.25 to 0.32%. The nitrocarburized crankshaft member includes a thickness of a surface compound layer of the nitrocarburized hard layer of 10 to 35 μm that is formed during establishment of a diffusion depth of a nitrogen diffusion zone below the surface compound layer of 700 μm or greater. | 03-26-2015 |
Takashi Kano, Hirakata-Shi JP
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20100252913 | SEMICONDUCTOR DEVICE - A GaN layer is grown on a sapphire substrate, an SiO | 10-07-2010 |
20110243171 | NITRIDE-BASED SEMICONDUCTOR LASER DEVICE - This nitride-based semiconductor laser device includes an active layer made of a nitride-based semiconductor and a p-type cladding layer, made of a nitride-based semiconductor, formed on the active layer. The refractive index in a region of the p-type cladding layer closer to the active layer is lower than the refractive index in another region of the p-type cladding layer opposite to the active layer. | 10-06-2011 |
Takashi Kano, Nagoya JP
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20100139451 | CRANKSHAFT MEMBER AND MANUFACTURING METHOD THEREOF - The invention relates to a crankshaft member having high fatigue strength and good bending correctability, and its method of manufacture. The steel made crankshaft member mainly consists of a two-phase structure of ferrite and perlite. The steel includes C, Ni, Mn, and Cr as required elements and Si, Cu, Mo, Ti, V, Nb, Ca, and S as optional elements that may be included, in the amounts of C within the range of 0.20 to 0.50 wt %, Si within the range of 0 to 0.6 wt %, Mn within the range of 0.5 to 1.5 wt %, Cu within the range of 0 to 0.7 wt %, Ni within the range of 0.05 to 1.5 wt %, Cr within the range of 0.05 to 0.45 wt %, and Mo within the range of 0 to 0.5 wt % to satisfy the condition 115≧70 C+8 Si+23 Mn+11 Cu+128 Cr+83 Mo≧50. A portion of the member surface is provided at least with a hard nitride layer having an average hardness within the range of 300 to 450 HV. Lamellar spacing of the perlite is 0.3 μm or less. | 06-10-2010 |
Takashi Kano, Osaka JP
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20080248603 | Nitride-based semiconductor element and method of preparing nitride-based semiconductor - A method of preparing a nitride semiconductor capable of forming a nitride-based semiconductor layer having a small number of dislocations as well as a small number of crystal defects resulting from desorption with excellent crystallinity on the upper surface of a substrate through a small number of growth steps is proposed. The method of preparing a nitride-based semiconductor comprises steps of forming a mask layer on the upper surface of a substrate to partially expose the upper surface of the substrate, forming a buffer layer on the exposed part of the upper surface of the substrate and the upper surface of the mask layer and thereafter growing a nitride-based semiconductor layer. Thus, the outermost growth surface of the nitride-based semiconductor layer laterally grown on the mask layer does not come into contact with the mask layer. Therefore, desorption hardly takes place from the outermost growth surface of the nitride-based semiconductor layer, whereby a nitride-based semiconductor layer having a small number of defects is formed. Further, the mask layer is directly formed on the substrate, whereby the number of growth steps for the nitride-based semiconductor layer is reduced. | 10-09-2008 |
20080280445 | Manufacturing method of nitride semiconductor device and nitride semiconductor device - Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed. | 11-13-2008 |
20090010292 | Nitride-based semiconductor laser device - A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer. | 01-08-2009 |
20090262772 | SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer. | 10-22-2009 |
20100025701 | Method Of Fabricating Nitride-Based Semiconductor Light-Emitting Device And Nitride-Based Semiconductor Light-Emitting Device - A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate. | 02-04-2010 |
Takashi Kano, Hirakata-City JP
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20090174035 | Semiconductor Device - A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate. | 07-09-2009 |
Takashi Kano, Moriguchi-Shi JP
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20090114941 | Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer - A GaN layer is grown on a sapphire substrate, an SiO | 05-07-2009 |
Takashi Kano, Aichi JP
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20120006831 | MANUFACTURING METHOD FOR FOAM MOLDED ARTICLE AND PACKAGING MATERIAL - An object of the present invention is to provide a method of manufacturing a foam molded article in which upstanding portions are formed on a peripheral edge of a main body portion inexpensively by greatly increasing a yield of a mold. To achieve this object, in a manufacturing method for a foam molded article, a plate surface of the main body portion on a side where the upstanding portions is molded by side surfaces | 01-12-2012 |