Patent application number | Description | Published |
20110101306 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 05-05-2011 |
20110210313 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure | 09-01-2011 |
20120168720 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 07-05-2012 |
20120196398 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 08-02-2012 |
20120217478 | SEMICONDUCTOR DEVICE, OPTICAL SENSOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device | 08-30-2012 |
20120298957 | LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY - The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array | 11-29-2012 |
20120326122 | EPITAXIAL WAFER, PHOTODIODE, OPTICAL SENSOR DEVICE, AND METHODS FOR PRODUCING EPITAXIAL WAFER AND PHOTODIODE - Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. | 12-27-2012 |
20130032780 | PHOTODIODE, OPTICAL SENSOR DEVICE, AND PHOTODIODE MANUFACTURING METHOD - A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate | 02-07-2013 |
20130099203 | PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR - A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. | 04-25-2013 |
20130313521 | PHOTODIODE AND METHOD FOR PRODUCING THE SAME - An object of the present invention is to provide, for example, a photodiode that can have sufficiently high sensitivity in a near-infrared wavelength range of 1.5 μm to 1.8 μm and can have a low dark current. A photodiode ( | 11-28-2013 |
20140054545 | PHOTODETECTOR, EPITAXIAL WAFER AND METHOD FOR PRODUCING THE SAME - Provided are a photodetector in which, in a III-V semiconductor having sensitivity in the near-infrared region to the far-infrared region, the carrier concentration can be controlled with high accuracy; an epitaxial wafer serving as a material of the photodetector; and a method for producing the epitaxial wafer. Included are a substrate formed of a III-V compound semiconductor; an absorption layer configured to absorb light; a window layer having a larger bandgap energy than the absorption layer; and a p-n junction positioned at least in the absorption layer, wherein the window layer has a surface having a root-mean-square surface roughness of 10 nm or more and 40 nm or less. | 02-27-2014 |
20140061588 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 03-06-2014 |
20140367640 | LIGHT-EMITTING ELEMENT, EPITAXIAL WAFER, AND METHOD FOR PRODUCING THE EPITAXIAL WAFER - Provided are an epitaxial wafer and a light-emitting element having a type-II MQW formed of III-V compound semiconductors and configured to emit light with a sufficiently high intensity. The method includes a step of growing an active layer having a type-II multi-quantum well structure (MQW) on a III-V compound semiconductor substrate, wherein, in the step of forming the type-II multi-quantum well structure, the type-II multi-quantum well structure is formed by metal-organic vapor phase epitaxy using only metal-organic sources such that a number of pairs of the type-II multi-quantum well structure is 25 or more. | 12-18-2014 |