Patent application number | Description | Published |
20090008678 | SEMICONDUCTOR DEVICE - An electron supply layer ( | 01-08-2009 |
20090045438 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 02-19-2009 |
20090173968 | Field Effect Transistor - A semiconductor device | 07-09-2009 |
20090230429 | Field effect transistor - A field effect transistor ( | 09-17-2009 |
20090230430 | Field effect transistor - A field effect transistor includes a layer structure made of compound semiconductor ( | 09-17-2009 |
20090267114 | FIELD EFFECT TRANSISTOR - A field effect transistor | 10-29-2009 |
20100038680 | III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR - Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate ( | 02-18-2010 |
20100064265 | RF CIRCUIT, CIRCUIT EVALUATION METHOD, ALGORITHM AND RECORDING MEDIUM - It is required to qualitatively design a circuitry device in which not only in a small-signal simulation but also in a large-signal simulation, loop oscillation and motorboating oscillation of an amplifier are precisely predicted to suppress oscillation without severing a loop or without inserting a circulator. To remove insertion loss due to a probe resistor Rx, a negative resistor −Rx/2 is arranged at both ends thereof. To prevent consumption of a DC bias in the probe, a DC block is applied. Further, to remove thermal noise caused by an actual resistor to reduce influence on a noise factor NF, the noise temperature (environmental temperature) of the actual resistor is set to zero Kelvin. | 03-11-2010 |
20100162042 | MULTIPROCESSOR SYSTEM AND CONTROL METHOD THEREOF - A multiprocessor system is disclosed. The multiprocessor system includes plural processor cores to which control to be performed is allocated. The multiprocessor system includes a monitoring processor which detects an abnormal operation that has occurred in a specific processor core to which control having a higher priority order than control to be allocated to processor cores other than the specific processor core is allocated. When the monitoring processor detects the abnormal operation in the specific processor core, the monitoring processor allocates the control having the higher priority order to one of the processor cores other than the specific processor core. | 06-24-2010 |
20100209060 | OPTICAL PULSE RESHAPING DEVICE, OPTICAL PULSE LIGHT SOURCE, SUPER-CONTINUUM LIGHT GENERATOR AND METHOD FOR SUPER-CONTINUUM LIGHT GENERATION - Regarding an optical pulse reshaping device of CPF type, there are subjects to reduce the number of stages by enhancing a compression efficiency as extremely higher for one stage of the CPF with maintaining a quality of an output pulse as high, and to be able to improve a degree of multiplexing by obtaining an output pulse having a Gaussian function for both of a time waveform therefor and a frequency waveform therefor. By using a normal dispersion HNLF in place of a zero dispersion HNLF, which configures the conventional CPF, it becomes able to overcome the above mentioned subjects. Moreover, it becomes able to reduce the number of fusion splice for a fiber, and to reduce a propagation loss of the CPF, by enhancing the compression efficiency as higher. | 08-19-2010 |
20100224910 | FIELD EFFECT TRANSISTOR - Disclosed is an HJFET | 09-09-2010 |
20100230684 | SEMICONDUCTOR DEVICE - A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (In | 09-16-2010 |
20100276732 | SEMICONDUCTOR DEVICE - A semiconductor device includes a lower barrier layer | 11-04-2010 |
20100284431 | OPTICAL PULSE TRAIN GENERATOR - An optical pulse train generator | 11-11-2010 |
20100327318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device capable of suppressing the occurrence of a punch-through phenomenon is provided. A first n-type conductive layer ( | 12-30-2010 |
20110006346 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that has high electron mobility while reducing a gate leakage current, and superior uniformity and reproducibility of the threshold voltage, and is also applicable to the enhancement mode type. The semiconductor device according to the present invention is a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed Al | 01-13-2011 |
20110241075 | BIPOLAR TRANSISTOR - A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [ | 10-06-2011 |
20110252871 | Ultraviolet Curing Resin Property Measuring Apparatus - Measuring apparatus comprises a rotating plate | 10-20-2011 |
20110260217 | SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME - There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region. | 10-27-2011 |
20110278586 | BIPOLAR TRANSISTOR - A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains In | 11-17-2011 |
20110284865 | HETEROJUNCTION FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING HETEROJUNCTION FIELD EFFECT TRANSISTOR, AND ELECTRONIC DEVICE - A heterojunction filed effect transistor with a low access resistance, a low on resistance, and the like, a method for producing a heterojunction filed effect transistor and an electron device are provided. In the heterojunction field effect transistor, an electron transit layer | 11-24-2011 |
20110297954 | SEMICONDUCTOR DEVICE, SCHOTTKY BARRIER DIODE, ELECTRONIC APPARATUS, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - [Problem to be Solved] Provided is a semiconductor device in which the trade-off between the pressure resistance and the on-state resistance is improved and the performance is improved. | 12-08-2011 |
20120027343 | WAVELENGTH DIVISION MULTIPLEX OPTICAL REGENERATION SYSTEM AND WAVELENGTH DIVISION MULTIPLEX OPTICAL REGENERATION METHOD - An optical regeneration system for regenerating a degenerated signal light, comprising a regeneration device having at least one of a soliton converter, a pulse roller, a Kerr-shutter and a soliton purifier. The solilton converter uses an anomalaous-dispersion fiber (ADF) having a fiber length up to three times the soliton frequency, and the pulse roller is provided with a pulse roller fiber having high non-linear characteristics. The Kerr-shutter comprises an optical LO (local oscillation) generator for generating an optical LO on an OPLL (optical phase locked loop), a phase comparator for detecting the phase difference between an externally-input signal light and an optical LO, and a control unit for regulating the repeated frequency of an optical LO based on the phase difference. The soliton purifier has a soliton fiber disposed between two optical fibers. | 02-02-2012 |
20120183254 | OPTICAL 90-DEGREE HYBRID - An optical 90-degree hybrid includes a 90-degree hybrid circuit which mixes signal light and local oscillation light (LO light), separates the signal light into orthogonal components I, Q to output. The 90-degree hybrid circuit includes a first and a second coupler that branch signal light and LO light, a first and a second path through which signal light propagates, a third and a fourth path through which LO light propagates, and a third and a fourth coupler that combine signal light and LO light. A phase difference of 90 degrees is given between the beams of LO light propagating through the third and fourth paths. The second coupler, the third path, and the fourth path are formed between the first path and the second path. The overall size of the 90-degree hybrid circuit is reduced and downsizing of the PLC chip is enabled. | 07-19-2012 |
20120200127 | STRUCTURE OF CONTAINER MOUNTED TO VEHICLE SEAT AND METHOD FOR MOUNTING CONTAINER TO VEHICLE SEAT - Container for accommodating small article(s) comprises: a container body including flange portion wherein connecting slits are formed; and a container lid element including lateral wall region having projected connecting pieces. A trim cover assembly of the seat includes: a peripheral end area or margin defined in a container mounting hole formed in the trim cover assembly; and connecting slits formed in that margin. In assembly, the connecting pieces are inserted through those flanged portion, while simultaneously the margin of trim cover assembly is sandwiched between the flanged portion and lateral wall region. Those free ends are flattened to connecting slits, respectively, so that free ends of the connecting pieces project from the connect together all the container body, container lid element and trim cover assembly. Finally, the trim cover assembly is attached upon a foam padding, with the container body inserted in a recession of the foam padding. | 08-09-2012 |
20120207474 | PLC-TYPE DEMODULATOR AND OPTICAL TRANSMISSION SYSTEM - The invention provides a PLC-type DP-QPSK demodulator that reduces connection loss between a polarization beam splitter and a 90-degree hybrid circuit and aims at reducing the manufacturing cost and an optical transmission system using the same. In an embodiment of the invention, a PLC-type DP-QPSK demodulator that receives a DP-QPSK signal includes one PLC chip having a planar lightwave circuit. Input ports and output ports of signal light are provided at an input end and at an output end of the PLC chip, respectively. Within the planar lightwave circuit, there are integrated a polarization beam splitter that splits the DP-QPSK signal into an X-polarization QPSK signal and a Y-polarization QPSK signal, and two 90-degree hybrid circuits that mix the X-polarization QPSK signal and local oscillation light and the Y-polarization QPSK signal and local oscillation light, respectively, split each QPSK signal into orthogonal components I, Q and output them. | 08-16-2012 |
20120217547 | FIELD EFFECT TRANSISTOR WITH REDUCED GATE LEAKAGE CURRENT - Disclosed is an HJFET | 08-30-2012 |
20120224812 | 90-DEGREE HYBRID - The present invention provides a 90-degree hybrid capable of miniaturization and also capable of a stable operation in a wide band. According to an embodiment of the present invention, a PLC-type 90-degree hybrid comprises: a PLC chip having a planar lightwave circuit formed therein; and a 90-degree hybrid circuit formed in the planar lightwave circuit, mixing a modulated signal light and an LO light to separate the signal light into quadrature components I and Q, and outputting the same. The 90-degree hybrid circuit includes: two Y-branch couplers each branching the signal light and the LO light; and two wavelength-independent directional couplers which cause LO lights passing through two paths and signal lights passing through two paths to interfere with each other, respectively. The above-described paths include waveguides having mutually inverted shapes and waveguides having an identical shape, and have a shape substantially symmetrical with respect to the signal light. | 09-06-2012 |
20120278785 | RF CIRCUIT, CIRCUIT EVALUATION METHOD, ALGORITHM AND RECORDING MEDIUM - An RF circuit on a circuit simulator to be used in a microwave or millimeter wave range or a high-frequency range includes a function for being inserted by a first port and a second port thereof in a circuit to be observed, at an arbitrary cross-sectional point of the circuit, and evaluating a reflection coefficient (or a characteristic impedance) in the cross-section. The insertion loss between the first port and the second port is zero or approximately zero and is ignorable also for any finite system impedance other than zero. | 11-01-2012 |
20130099245 | FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE - The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer | 04-25-2013 |
20130113028 | SEMICONDUCTOR DEVICE AND FIELD EFFECT TRANSISTOR - A semiconductor device comprises a substrate | 05-09-2013 |
20130129273 | POLARIZATION SEPARATION ELEMENT AND OPTICAL INTEGRATED ELEMENT - A polarization separation element of an optical waveguide type formed on a substrate includes: an input-light demultiplexer; an output-light multiplexer; a first arm waveguide and a second arm waveguide that connect the input-light demultiplexer and the output-light multiplexer, each of the first and second arm waveguides including an optical waveguide having birefringence; and at least one heating unit formed above each of the first arm waveguide and the second arm waveguide, wherein a geometric length of the second arm waveguide is larger than a geometric length of the first arm waveguide by equal to or less than a degree corresponding to an amount of increase in an optical path length generated in the first arm waveguide when the at least one heating unit performs heating on the first arm waveguide to impart birefringence to the first arm waveguide. | 05-23-2013 |
20130140859 | VEHICLE SEAT - A vehicle seat includes: a seat back frame that is provided with a pair of side frame portions that are located on both left and right sides in the seat transverse direction; an outer-side load transmitting block that is located further to an outer side in the transverse direction of the seat back frame than the side frame portion of the seat back frame, and that transmits an impact load that is input from a side of the vehicle body to the seat back frame; a protruding portion that protrudes from a side surface of the side frame portion on the outer side in the transverse direction of the seat back frame towards the outer side in the transverse direction of the seat back frame; a side airbag apparatus that is located on a front surface of the protruding portion; and an engaging portion that is formed in the outer-side load transmitting block, and that receives the protruding portion. The protruding portion is formed in a box shape that has a supporting surface on a surface thereof that faces the side airbag apparatus. | 06-06-2013 |
20130236136 | OPTICAL WAVEGUIDE CIRCUIT - An optical waveguide circuit includes a polarization beam splitter connecting to a first input optical waveguide; an optical interference element receiving one of orthogonally polarization-split lights of a first light from the polarization beam splitter, and one of orthogonally-polarized lights from a second light input to a second input optical waveguide, the optical interference element causing interference therebetween; a first connection optical waveguide connecting the polarization beam splitter and the optical interference element; and a second connection optical waveguide connecting the second input optical waveguide and the optical interference element. The first and the second input optical waveguides have a straight-line shape or an S-shape including a first bending portion and a second bending portion to cancel the polarization-rotation of light taking place in the first bending portion. The polarization beam splitter, the first and the second connection optical waveguides, and the optical interference element are arranged in an S-shape. | 09-12-2013 |
20140367743 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 12-18-2014 |