| Patent application number | Description | Published |
|---|
| 20090008678 | SEMICONDUCTOR DEVICE - An electron supply layer ( | 01-08-2009 |
| 20090045438 | FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR - In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a≧5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 Å) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature. | 02-19-2009 |
| 20090173968 | Field Effect Transistor - A semiconductor device | 07-09-2009 |
| 20090230429 | Field effect transistor - A field effect transistor ( | 09-17-2009 |
| 20090230430 | Field effect transistor - A field effect transistor includes a layer structure made of compound semiconductor ( | 09-17-2009 |
| 20090267114 | FIELD EFFECT TRANSISTOR - A field effect transistor | 10-29-2009 |
| 20100038680 | III-NITRIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR - Provided is a semiconductor device that can reduce the contact resistance, has a small current collapse, and can improve the pinch-off characteristic upon a high-frequency operation. A field effect transistor using a wurtzite (having (0001) as the main plane) type III-nitride semiconductor includes: a substrate ( | 02-18-2010 |
| 20100064265 | RF CIRCUIT, CIRCUIT EVALUATION METHOD, ALGORITHM AND RECORDING MEDIUM - It is required to qualitatively design a circuitry device in which not only in a small-signal simulation but also in a large-signal simulation, loop oscillation and motorboating oscillation of an amplifier are precisely predicted to suppress oscillation without severing a loop or without inserting a circulator. To remove insertion loss due to a probe resistor Rx, a negative resistor −Rx/2 is arranged at both ends thereof. To prevent consumption of a DC bias in the probe, a DC block is applied. Further, to remove thermal noise caused by an actual resistor to reduce influence on a noise factor NF, the noise temperature (environmental temperature) of the actual resistor is set to zero Kelvin. | 03-11-2010 |
| 20100162042 | MULTIPROCESSOR SYSTEM AND CONTROL METHOD THEREOF - A multiprocessor system is disclosed. The multiprocessor system includes plural processor cores to which control to be performed is allocated. The multiprocessor system includes a monitoring processor which detects an abnormal operation that has occurred in a specific processor core to which control having a higher priority order than control to be allocated to processor cores other than the specific processor core is allocated. When the monitoring processor detects the abnormal operation in the specific processor core, the monitoring processor allocates the control having the higher priority order to one of the processor cores other than the specific processor core. | 06-24-2010 |
| 20100209060 | OPTICAL PULSE RESHAPING DEVICE, OPTICAL PULSE LIGHT SOURCE, SUPER-CONTINUUM LIGHT GENERATOR AND METHOD FOR SUPER-CONTINUUM LIGHT GENERATION - Regarding an optical pulse reshaping device of CPF type, there are subjects to reduce the number of stages by enhancing a compression efficiency as extremely higher for one stage of the CPF with maintaining a quality of an output pulse as high, and to be able to improve a degree of multiplexing by obtaining an output pulse having a Gaussian function for both of a time waveform therefor and a frequency waveform therefor. By using a normal dispersion HNLF in place of a zero dispersion HNLF, which configures the conventional CPF, it becomes able to overcome the above mentioned subjects. Moreover, it becomes able to reduce the number of fusion splice for a fiber, and to reduce a propagation loss of the CPF, by enhancing the compression efficiency as higher. | 08-19-2010 |
| 20100224910 | FIELD EFFECT TRANSISTOR - Disclosed is an HJFET | 09-09-2010 |
| 20100230684 | SEMICONDUCTOR DEVICE - A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (In | 09-16-2010 |
| 20100276732 | SEMICONDUCTOR DEVICE - A semiconductor device includes a lower barrier layer | 11-04-2010 |
| 20100284431 | OPTICAL PULSE TRAIN GENERATOR - An optical pulse train generator | 11-11-2010 |
| 20100327318 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device capable of suppressing the occurrence of a punch-through phenomenon is provided. A first n-type conductive layer ( | 12-30-2010 |
| 20110006346 | SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device that has high electron mobility while reducing a gate leakage current, and superior uniformity and reproducibility of the threshold voltage, and is also applicable to the enhancement mode type. The semiconductor device according to the present invention is a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed Al | 01-13-2011 |
