Patent application number | Description | Published |
20080292740 | SHEET/FILM MOLDING APPARATUS AND SHEET/FILM MOLDING METHOD - A sheet/film molding apparatus includes: a main roll sandwiches and presses, with a touch roll, a resin molten sheet and conveys the sandwiched and pressed resin sheet; and a separating roll separates the resin sheet from an outer peripheral surface of the main roll and conveys the resin sheet. The separating roll has a rubber roll and a metal elastic external cylinder having the rubber roll housed therein and being eccentrically positioned to the rubber roll and thin and easily elastically deformed. Cooling water is supplied between the rubber roll of the separating roll and the metal elastic external cylinder. The resin sheet between the main roll and the metal elastic external cylinder is cooled by allowing the rubber roll to make pressure contact with an inner peripheral surface thereof. The separating roll separates the resin sheet from the outer peripheral surface of the main roll. | 11-27-2008 |
20090295017 | SHEET FORMING APPARATUS AND SHEET FORMING METHOD - A sheet forming apparatus includes a first roll | 12-03-2009 |
20090297649 | SHEET FILM FORMING ROLL, SHEET FILM CASTING APPARATUS, FINE PATTERN TRANSFERRING APPARATUS AND SHEET FILM - Disclosed is a sheet film forming roll ( | 12-03-2009 |
20090297777 | TOUCH ROLL, MAIN ROLL, SHEET FILM CASTING APPARATUS, FINE PATTERN TRANSFERRING APPARATUS AND SHEET FILM - Disclosed is a touch roll ( | 12-03-2009 |
20110003672 | SHEET OR FILM-FORMING ROLL - A sheet or film-forming roll 10 includes an inner cylinder member 20 having axial parts 21, 22 provided on both sides thereof and rotatably supported by bearing parts 26, 27 through the axial parts 21, 22, a rubber roll 40 fitted to an outer circumferential surface of the inner cylinder member 20, eccentric side plates 53, 54 rotatably fitted to the axial parts 21, 22 of the inner cylinder member 20 respectively, and an elastic outer cylinder member 50 rotatably supported by the eccentric side plates 53, 54. The elastic outer cylinder member 50, which is provided with a thin-walled structure and made from metal, has an inner diameter larger than an outer diameter of the rubber roll 40 to accommodate the rubber roll 40 in an interior 68 thereof, and has inner circumferential surface 50A coming into contact with an outer circumferential surface 40A of the rubber roll 40. | 01-06-2011 |
Patent application number | Description | Published |
20090152550 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base. | 06-18-2009 |
20100047952 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown. | 02-25-2010 |
20100081254 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR LAYER - An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured. | 04-01-2010 |
20100154874 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - The oxidation of a lower electrode by the reaction between a metal element in the lower electrode and oxygen in a bonding layer is suppressed. The contamination of a semiconductor layer that is a photoelectric conversion layer by the diffusion of the metal element in the lower electrode into the semiconductor layer is suppressed. The invention relates to a photoelectric conversion device including a backside electrode layer, a crystalline semiconductor layer having a semiconductor junction, and a light-receiving-side electrode layer over a substrate having an insulating surface, in which the backside electrode layer has a stacked structure including a first conductive layer formed with a metal nitride or a refractory metal, a second conductive layer including aluminum (Al) or silver (Ag) as its main component, and a third conductive layer having low resistivity with a semiconductor material, and also relates to a manufacturing method thereof | 06-24-2010 |
20110303272 | Photoelectric Conversion Device and Manufacturing Method Thereof - An object is to provide a photoelectric conversion device in which defects are suppressed as much as possible by filling a separation process region of a semiconductor film with an insulating resin. A photoelectric conversion device includes a first conductive layer formed over a substrate; first to third semiconductor layers formed over the first conductive layer; a second conductive layer formed over the third semiconductor layer; a first separation groove for separating the first conductive layer and the first to third semiconductor layers into a plurality of pieces; a second separation groove for separating the first to third semiconductor layers into a plurality of pieces; and a third separation groove for separating the second conductive layer into a plurality of pieces. An insulating resin is filled in a structural defect that exists in at least one of the first to third semiconductor layers, and in the first separation groove. | 12-15-2011 |
20110308588 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - A photoelectric conversion device having a high electric generating capacity at low illuminance, in which a semiconductor layer is appropriately separated and short circuit of a side surface portion of a cell is prevented. The photoelectric conversion device includes an isolation groove formed between one first electrode and the other first electrode that is adjacent to the one first electrode; a stack including a first semiconductor layer having one conductivity type over the first electrode, a second semiconductor layer formed using an intrinsic semiconductor, and a third semiconductor layer having a conductivity type opposite to the one conductivity type; and a connection electrode connecting one first electrode and a second electrode that is in contact with a third semiconductor layer included in a stack formed over the other first electrode that is adjacent to the one first electrode. A side surface portion of the second semiconductor layer is not crystallized. | 12-22-2011 |
20120132271 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode. | 05-31-2012 |
Patent application number | Description | Published |
20090171507 | GASKET TYPE ORIFICE AND PRESSURE TYPE FLOW RATE CONTROL APPARATUS FOR WHICH THE ORIFICE IS EMPLOYED - An orifice changeable pressure type flow rate control apparatus comprises a valve body of a control valve for a pressure type flow rate control apparatus installed between an inlet side fitting block provided with a coupling part of a fluid supply pipe and an outlet side fitting block provided with a coupling part of a fluid takeout pipe; a fluid inlet side of the valve body and the inlet side fitting block, and a fluid outlet side of the valve body and the outlet side fitting block are detachably and hermitically connected respectively so a flow passage for gases through the control valve is formed; and, a gasket type orifice for a pressure type flow rate control apparatus is removably inserted between a gasket type orifice insertion hole provided on the outlet side of the valve body and a gasket type orifice insertion hole of the outlet side fitting block. | 07-02-2009 |
20100139775 | FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS - A pressure type flow control device enabling a reduction in size and an installation cost by accurately controlling the flow of a fluid in a wide flow range. Specifically, the flow of the fluid flowing in an orifice ( | 06-10-2010 |
20110120566 | DISCONTINUOUS SWITCHING FLUID FLOW RATE CONTROL METHOD USING PRESSURE TYPE FLOW RATE CONTROL DEVICE - A fluid flow rate control method is provided that uses a flow rate range variable type pressure type flow rate control device provided with at least two or more parallel fluid passages disposed between the downstream side of a control valve of the control device and a fluid supply pipe passage, and orifices having different fluid flow rate characteristics are respectively interposed in parallel fluid passages to pass fluid in a first flow rate region through one orifice for flow rate control, and to pass fluid in a second flow rate region through at least another orifice for flow rate control. Flow rate characteristics of the respective orifices are selected so that a maximum controllable flow rate of fluid in the first flow rate region at low flow rate is smaller than 10% of a maximum controllable flow rate in the second flow rate region at high flow rate. | 05-26-2011 |
20110315905 | GASKET TYPE ORIFICE AND PRESSURE TYPE FLOW RATE CONTROL APPARATUS FOR WHICH THE ORIFICE IS EMPLOYED - A gasket type orifice includes a first orifice base having a through-type passage in a central area thereof, a second orifice base having in a central area thereof a through-type passage communicating with the passage of the first orifice base, and an orifice plate having an orifice hole formed in a central area thereof, wherein the orifice plate is mounted by insertion in an airtight manner between both orifice bases, and the gasket type orifice is installed in a fluid passage, in which the outer end faces of both orifice bases respectively serve as sealing faces, and an outer diameter of the second orifice base, located on the downstream side, is larger than an outer diameter of the first orifice base located on the upstream side, and an outer peripheral edge portion of an inner end face of the second orifice base serves as another sealing face. | 12-29-2011 |
20130220451 | FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS - A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP | 08-29-2013 |
20140299201 | GAS SUPPLYING APPARATUS - A gas supply line and gas supplying apparatus that facilitates maintenance and management of various types of devices. The supplying apparatus is formed with a supply line that is made up of a gas inlet-side block, a gas outlet-side block and a plurality of fluid control devices. The gas supplying apparatus is formed with at least two gas supply lines, the fluid control device of each gas supply line includes at least one flow controller, an inlet-side block of the flow controller on one gas supplying line is connected to an inlet-side block of the flow controller on the other gas supply line so as to oppose the inlet-side block, and an outlet-side block of one flow controller is connected to an outlet-side block of the other flow controller so as to oppose the gas outlet-side block. | 10-09-2014 |
20150160662 | FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS - A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2 | 06-11-2015 |
20150234390 | INTEGRATED TYPE GAS SUPPLYING APPARATUS - A plurality of stacked and fixed gas supplying units U, each gas supplying unit U having at least four gas supply lines S is formed by opposingly combining and fixing two flow controllers | 08-20-2015 |
Patent application number | Description | Published |
20120161130 | ELECTRODE, PHOTOELECTRIC CONVERSION DEVICE USING THE ELECTRODE, AND MANUFACTURING METHOD THEREOF - A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained. | 06-28-2012 |
20120273036 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - To provide a photoelectric conversion device with less metal contamination and surface detects, and a manufacturing method thereof. The photoelectric conversion device is formed in the following manner: a surface of the single crystal silicon substrate is soaked in an alkaline solution to perform etching so that unevenness including a plurality of minute projections each having a substantially square pyramidal shape and a depression formed between the adjacent projections are formed; then, the single crystal silicon substrate having the unevenness is soaked in a mixed acid solution to perform etching so that at a cross section including a vertex of the projection and dividing each of a surface of the projection and a surface facing the aforementioned surface into two equal parts, the vertex of the projection forms an obtuse angle, and a bottom of the depression has a curved surface. | 11-01-2012 |
20130087789 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced. | 04-11-2013 |
20130102107 | METHOD FOR PROCESSING SILICON SUBSTRATE - It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step of forming a thin film including a metal having higher electronegativity than silicon and having a plurality of openings on a silicon substrate, a second step of soaking the silicon substrate subjected to the first step in a hydrofluoric acid solution containing oxidizer, and a third step of soaking the silicon substrate subjected to the second step in an ammonia aqueous solution containing oxidizer. By performing the steps in the above order, a minute uneven structure is formed on a surface of the silicon substrate to reduce the reflectance. | 04-25-2013 |
20150162477 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with improved electric characteristics is provided. The photoelectric conversion device has a structure in which a window layer is formed by a stack of a first silicon semiconductor layer and a second silicon semiconductor layer, and the second silicon semiconductor layer has high carrier concentration than the first silicon semiconductor layer and has an opening. Light irradiation is performed on the first silicon semiconductor layer through the opening without passing through the second silicon semiconductor layer; thus, light absorption loss in the window layer can be reduced. | 06-11-2015 |