Patent application number | Description | Published |
20080225142 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device comprising a plurality of pixel parts each capable of obtaining one color signal, said plurality of pixel parts being arranged in the same plane, wherein each of the pixel parts comprises: a photoelectric conversion element comprising a lower electrode formed on or above a substrate, an upper electrode formed above the lower electrode and a photoelectric conversion film sandwiched between the lower electrode and the upper electrode; and a color filter formed on or above the upper electrode, wherein d | 09-18-2008 |
20100079641 | IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING ELEMENT - In an imaging apparatus having a plurality of pixel portions containing photoelectric converting portions, each of the pixel portions is provided with a writing transistor and a reading transistor, which contain a floating gate provided above a semiconductor substrate in order to store thereinto electric charges generated in the photoelectric converting portion; and a control portion for performing such a driving operation that the electric charges stored in the floating gate are ejected to a writing drain of the writing transistor and a reading drain of the reading transistor. | 04-01-2010 |
20100079650 | IMAGING APPARATUS AND METHOD FOR DRIVING SOLID-STATE IMAGING ELEMENT - In an imaging apparatus equipped with a solid-state imagining element includes: a photoelectric converting portion; a floating gate provided above a semiconductor substrate, for storing thereinto electric charges generated in the photoelectric converting portion; and a writing transistor for injecting the electric charges generated in the photoelectric converting portion into the floating gate, the solid-state imaging element is further comprised of: a control portion for driving a writing transistor in such a manner that injecting of the electric charges generated in the photoelectric converting portion into the floating gate is stopped during an exposing time period, and after the exposing time period has accomplished, the electric charges generated in the photoelectric converting portion during the exposing time period are injected into the floating gate. | 04-01-2010 |
20100085454 | IMAGING APPARATUS AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE - An imaging apparatus includes a control unit of performing a series of drive operations of discharging electric charges in photoelectric conversion portions of all pixel units to a semiconductor substrate, simultaneously starting an exposure in all the pixel units, injecting the electric charges generated in the photoelectric conversion portions during the exposure period into floating gates FG during the exposure period, reading first signals corresponding to the electric charges accumulated in the FG after the end of the exposure period, discharging the electric charges in the FG to writing drains and reading drains, and reading second signals corresponding to noises accumulated in the FG, at different times by lines and a CDS generating an image capturing signal for generating image data by subtracting the second signals from the first signals. | 04-08-2010 |
20100085455 | IMAGING APPARATUS AND METHOD OF DRIVING SOLID-STATE IMAGING DEVICE - In an imaging apparatus having plural pixel units each including a photoelectric conversion portion, each pixel unit has a writing transistor WT and a reading transistor RT each including a floating gate FG disposed on a semiconductor substrate so as to accumulate electric charges generated in the photoelectric conversion portion, and the imaging apparatus includes a control unit independently performing a first charge discharging drive operation of discharging the electric charges generated in the photoelectric conversion portion of each pixel unit in a group to a writing drain WD or a reading drain RD in the pixel unit by groups including plural pixel units and controlling an exposure period start time of each group. | 04-08-2010 |
20110049591 | SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE - A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride. | 03-03-2011 |
20110049661 | SOLID-STATE IMAGING DEVICE AND PROCESS OF MAKING SOLID STATE IMAGING DEVICE - A solid state imaging device includes an array of pixels, each of the pixels includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; and a readout circuit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer have a difference of at least 1 eV, and the solid-state imaging device further includes a transparent partition wall between adjacent color filters of adjacent pixels of the array of pixels, the partition wall being made from a transparent material having a lower refractive index than a material forming the color filters. | 03-03-2011 |
20110049665 | IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUS - An image pickup device includes a plurality of first electrodes, a second electrode, a third electrode, a photoelectric conversion layer, a plurality of signal reading portions, at least one of electric potential adjusting portions. The plurality of first electrodes is arranged on an upper side of a substrate in two dimensions with a predetermined gap interposed between one of the first electrodes and another first electrode adjacent to the one of the first electrode. The second electrode is arranged next to the first electrodes arranged on an outermost side of the first electrodes with the predetermined gap interposed between the first electrodes arranged on the outermost side and the second electrode. The third electrode faces both of the plurality of first electrodes and the second electrode. The photoelectric conversion layer is disposed between the plurality of first electrodes and the second electrode and the third electrode. | 03-03-2011 |
20110241151 | IMAGING DEVICE - An imaging device includes a plurality of lower electrodes, an upper electrode, an organic photoelectric conversion layer and a passivation layer. The plurality of lower electrodes are arranged in a two dimensional pattern above a substrate. The upper electrode is arranged above the plurality of lower electrodes so as to oppose the lower electrodes. The organic photoelectric conversion layer is sandwiched between the plurality of lower electrodes and the upper electrode. The passivation layer is provided above the upper electrode and covers the upper electrode. An angle which an end side surface of the lower electrode forms with respect to a surface of a lower layer supporting the lower electrode is 45-degree or more. The passivation layer is formed from a plurality of layers. Film stress of the entire passivation layer ranges from −200 MPa to 250 MPa. | 10-06-2011 |
20110285883 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: | 11-24-2011 |
20120080675 | PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE - A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ. | 04-05-2012 |
20120161270 | SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE - A solid-state imaging device includes a substrate, a dielectric layer on the substrate, and an array of pixels, each of the pixels includes: a pixel electrode, an organic layer, a counter electrode, a sealing layer, a color filter, a readout circuit and a light-collecting unit as defined herein, the photoelectric layer contains an organic p-type semiconductor and an organic n-type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n-type semiconductor present in the photoelectric layer have a difference of at least 1 eV, and a surface of the pixel electrodes on a side of the photoelectric layer and a surface of the dielectric layer on a side of the photoelectric layer are substantially coplanar. | 06-28-2012 |
20120305926 | SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE - A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride. | 12-06-2012 |
20130015328 | SOLID-STATE IMAGE PICKUP DEVICE AND IMAGE PICKUP APPARATUSAANM Goto; TakashiAACI KanagawaAACO JPAAGP Goto; Takashi Kanagawa JP - A solid-state image pickup device includes a plurality of effective pixels each including a photoelectric conversion element and an OB pixel that is provided outside of an area where the effective pixels are formed and obtains the same output with a dark output of the effective pixel. Each of the effective pixels includes a first signal read-out circuit formed on a semiconductor substrate. The OB pixel includes a second signal read-out circuit formed on the semiconductor substrate and a capacitor connected to an input node of the second signal read-out circuit. The second signal read-out circuit has the same configuration as the first signal read-out circuit. A capacitance value of the capacitor is a value that renders the capacitance value at the input node of the first signal read-out circuit and the capacitance value at the input node of the second signal read-out circuit to be substantially equal to each other. | 01-17-2013 |
20130113972 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion layer, a MOS transistor circuit. The photoelectric conversion layer is formed over a semiconductor substrate. The MOS transistor circuit reads out a signal corresponding to charges generated in the photoelectric conversion layer and then collected, and that is formed in the semiconductor substrate, the charges having a given polarity. The MOS transistor circuit includes a charge accumulation portion, a reset transistor, and an output transistor. The charge accumulation portion is electrically connected with the photoelectric conversion layer. The reset transistor resets a potential of the charge accumulation portion to a reset potential. The output transistor outputs a signal corresponding to the potential of the charge accumulation portion. The reset transistor and the output transistor have carriers whose polarity is opposite to the given polarity. In the MOS transistor circuit, following formula (1) is satisfied: GND05-09-2013 | |
20140087514 | PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE - A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ. | 03-27-2014 |