Takara
Takara Fukushima, Yamanashi JP
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20140030886 | METHOD FOR FORMING COPPER WIRING - A copper (Cu) wiring forming method includes forming a barrier film on the entire surface of a wafer which has a trench, forming a ruthenium (Ru) film on the barrier film, and filling the trench by forming a pure copper film on the ruthenium film by a physical vapor deposition (PVD). The method further includes forming a copper alloy film on the pure copper film by the PVD, forming a copper wiring by polishing the entire surface by a chemical mechanical polishing, forming a cap layer made of a dielectric material on the copper wiring, and segregating an alloy component included in the copper alloy film in a region including a portion corresponding an interface between the copper wiring and the cap layer. | 01-30-2014 |
Takara Fukushima, Nirasaki-City JP
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20140287163 | METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs. | 09-25-2014 |
Takara Kato, Nirasaki-Shi JP
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20120064717 | METHOD FOR FORMING CVD-RU FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES - In a CVD-Ru film forming method, an Ru-film is formed on a substrate by means of CVD using a ruthenium carbonyl as a film-forming material before forming a Cu film. Then the substrate on which the aforementioned Ru film is formed is annealed in a hydrogen containing atmosphere. | 03-15-2012 |
20120222782 | METHOD FOR FORMING Cu WIRING - In a Cu wiring forming method which is followed by a post-process including a treatment of a temperature of 500° C. or higher, an adhesion film made of a metal having a lattice spacing that differs from the lattice spacing of Cu by 10% or less is formed on a substrate having a trench and/or a hole in the surface such that the adhesion film is deposited on at least the bottom and side surfaces of the trench and/or hole. A Cu film is formed on the adhesion film to fill the trench and/or hole. An annealing process is performed on the substrate on which the Cu film has been formed at 350° C. or higher. The CU film is polished to leave only the part of the Cu film which corresponds to the trench and/or hole. A cap is formed on the polished Cu film to form a Cu wiring. | 09-06-2012 |
Takara Kato, Yamanashi JP
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20120196052 | METHOD OF FORMING COPPER WIRING AND METHOD AND SYSTEM FOR FORMING COPPER FILM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding Cu in the trench or hole by forming a Cu film on the Ru film using PVD while annealing the substrate such that migration of copper into the trench or hole occurs. | 08-02-2012 |
20120196437 | METHODS OF FORMING COPPER WIRING AND COPPER FILM, AND FILM FORMING SYSTEM - A method of forming a Cu wiring in a trench or hole formed in a substrate is provided. The method includes forming a barrier film on the surface of the trench or hole, forming a Ru film on the barrier film, and embedding copper in the trench or hole by forming a Cu film on the Ru film using PVD while heating the substrate such that migration of copper into the trench or hole occurs. | 08-02-2012 |
20130237053 | FILM FORMING METHOD AND FILM FORMING APPARATUS - A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating. | 09-12-2013 |
Takara Kato, Nirasaki City JP
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20130252417 | THIN FILM FORMING METHOD - A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon. | 09-26-2013 |