Patent application number | Description | Published |
20080210959 | Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily, and can stably provide high light emission efficiencies for a long time period, a light emitting device includes an n-type nitride semiconductor layer at a first main surface side of a nitride semiconductor substrate, a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at the first main surface side and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer at the first main surface side. The nitride semiconductor substrate has a resistivity of 0.5 Ω·cm or less and the p-type nitride semiconductor layer side is down-mounted so that light is emitted from the second main surface of the nitride semiconductor substrate at the opposite side from the first main surface. | 09-04-2008 |
20090197399 | METHOD OF GROWING GROUP III-V COMPOUND SEMICONDUCTOR, AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND ELECTRON DEVICE - Provided are a method of growing a group III-V compound semiconductor, and method of manufacturing a light-emitting device and an electron device, in which risks are reduced and nitrogen can be efficiently supplied at low temperatures. | 08-06-2009 |
20100047933 | SUBSTRATE, SUBSTRATE INSPECTING METHOD AND METHODS OF MANUFACTURING AN ELEMENT AND A SUBSTRATE - A substrate inspection method allowing inspection of all a plurality of substrates each provided at its surface with a plurality of layers by determining quality of the plurality of layers as well as methods of manufacturing the substrate and an element using the substrate inspection method are provided. The substrate inspection method includes a step of preparing the substrate provided at its main surface with the plurality of layers, a film forming step, a local etching step, and an inspection step or a composition analysis step. In the step, a concavity is formed in a region provided with an epitaxial layer of the main surface of the substrate by removing at least partially the epitaxial layer. In the inspection step, the inspection is performed on the layer exposed in the concavity. | 02-25-2010 |
20100055820 | METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL WAFER | 03-04-2010 |
20100078648 | GALLIUM NITRIDE-BASED EPITAXIAL WAFER AND METHOD OF FABRICATING EPITAXIAL WAFER - A gallium nitride-based epitaxial wafer for a nitride light-emitting device comprises a gallium nitride substrate having a primary surface, a gallium nitride-based semiconductor film provided on the primary surface of the gallium nitride substrate, and, an active layer provided on the gallium nitride-based semiconductor film, the active layer having a quantum well structure. The active layer includes a well layer of a gallium nitride-based semiconductor. The gallium nitride-based semiconductor contains indium as a Group III element. A normal line of the primary surface and a C-axis of the gallium nitride substrate form an off angle with each other. The off angle is distributed on the primary surface, and the off angle monotonically increases on the line that extends from one point to another point through a center point of the primary surface of the gallium nitride substrate. The one point and the other point are on an edge of the primary surface, and indium contents of the well layer defined at n points (n: integer) on the line monotonically decrease in a direction from the one point to the other point. The thickness values of the well layer defined at the n points monotonically increase in the direction. | 04-01-2010 |
20100102297 | GALLIUM NITRIDE-BASED EPITAXIAL WAFER AND METHOD OF PRODUCING GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A source gas flows through a flow channel | 04-29-2010 |
20100207138 | III Nitride Semiconductor Crystal, III Nitride Semiconductor Device, and Light Emitting Device - Group III nitride semiconductor crystals of a size appropriate for semiconductor devices and methods for manufacturing the same, Group III nitride semiconductor devices and methods for manufacturing the same, and light-emitting appliances. A method of manufacturing a Group III nitride semiconductor crystal includes a process of growing at least one Group III nitride semiconductor crystal substrate on a starting substrate, a process of growing at least one Group III nitride semiconductor crystal layer on the Group III nitride semiconductor crystal substrate, and a process of separating a Group III nitride semiconductor crystal, constituted by the Group III nitride semiconductor crystal substrate and the Group III nitride semiconductor crystal layer, from the starting substrate, and is characterized in that the Group III nitride semiconductor crystal is 10 μm or more but 600 μm or less in thickness, and is 0.2 mm or more but 50 mm or less in width. | 08-19-2010 |
20100213439 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 08-26-2010 |
20100230690 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device | 09-16-2010 |
20100276663 | GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM - In a GaN based semiconductor optical device | 11-04-2010 |
20100279495 | METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER - A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region | 11-04-2010 |
20100297784 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 11-25-2010 |
20100322276 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 12-23-2010 |
20110042644 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 02-24-2011 |
20110057167 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device LE | 03-10-2011 |
20110057200 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device | 03-10-2011 |
20110058585 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface. | 03-10-2011 |
20110075694 | III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser device - In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the <0001> axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the second dielectric multilayer film is smaller than a thickness of the first dielectric multilayer film. | 03-31-2011 |
20110075695 | III-INTRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE - In a III-nitride semiconductor laser device, a laser structure includes a support base with a semipolar primary surface comprised of a III-nitride semiconductor, and a semiconductor region provided on the semipolar primary surface of the support base. First and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device are provided on first and second end faces of the semiconductor region, respectively. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer provided between the first cladding layer and the second cladding layer. The first cladding layer, the second cladding layer, and the active layer are arranged in an axis normal to the semipolar primary surface. A c+ axis vector indicating a direction of the <0001> axis of the III-nitride semiconductor of the support base is inclined at an angle in the range of not less than 45 degrees and not more than 80 degrees or in the range of not less than 100 degrees and not more than 135 degrees toward a direction of any one crystal axis of the m- and a-axes of the III-nitride semiconductor with respect to a normal vector indicating a direction of the normal axis. The first and second end faces intersect with a reference plane defined by the normal axis and the one crystal axis of the hexagonal III-nitride semiconductor. The c+ axis vector makes an acute angle with a waveguide vector indicating a direction from the second end face to the first end face. A thickness of the first dielectric multilayer film is smaller than a thickness of the second dielectric multilayer film. | 03-31-2011 |
20110111578 | METHOD OF FORMING p-TYPE GALLIUM NITRIDE BASED SEMICONDUCTOR, METHOD OF FORMING NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FORMING EPITAXIAL WAFER - A method of forming a p-type gallium nitride based semiconductor without activation annealing is provided, and the method can provide a gallium nitride based semiconductor doped with a p-type dopant. A GaN semiconductor region | 05-12-2011 |
20110114916 | III-NITRIDE SEMICONDUCTOR OPTICAL DEVICE AND EPITAXIAL SUBSTRATE - A III-nitride semiconductor optical device has a support base comprised of a III-nitride semiconductor, an n-type gallium nitride based semiconductor layer, a p-type gallium nitride based semiconductor layer, and an active layer. The support base has a primary surface at an angle with respect to a reference plane perpendicular to a reference axis extending in a c-axis direction of the III-nitride semiconductor. The n-type gallium nitride based semiconductor layer is provided over the primary surface of the support base. The p-type gallium nitride based semiconductor layer is doped with magnesium and is provided over the primary surface of the support base. The active layer is provided between the n-type gallium nitride based semiconductor layer and the p-type gallium nitride based semiconductor layer over the primary surface of the support base. The angle is in the range of not less than 40° and not more than 140°. The primary surface demonstrates either one of semipolar nature and nonpolar nature. The p-type gallium nitride based semiconductor layer contains carbon as a p-type dopant. A carbon concentration of the p-type gallium nitride based semiconductor layer is not less than 2×10 | 05-19-2011 |
20110124142 | GAN SEMICONDUCTOR OPTICAL ELEMENT, METHOD FOR MANUFACTURING GAN SEMICONDUCTOR OPTICAL ELEMENT, EPITAXIAL WAFER AND METHOD FOR GROWING GAN SEMICONDUCTOR FILM - In a GaN based semiconductor optical device | 05-26-2011 |
20110164637 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 07-07-2011 |
20110180805 | GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE - A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA | 07-28-2011 |
20110186860 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LIGHT EMITTING APPARATUS - Disclosed is a nitride-based semiconductor light emitting device with excellent light extraction efficiency. A light emitting device | 08-04-2011 |
20110198566 | METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT - A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N | 08-18-2011 |
20110201142 | Method of Manufacturing a Light-Emitting Device - To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission, a method of manufacturing the light-emitting device involves forming a first AlGaN layer of a first conductivity type on a side of a first main surface of a nitride semiconductor substrate, forming a light-emitting layer including an InAlGaN quaternary alloy on the first AlGaN layer, forming a second AlGaN layer of a second conductivity type on the light-emitting layer, and removing the nitride semiconductor substrate after forming the second AlGaN layer. | 08-18-2011 |
20110223701 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device | 09-15-2011 |
20110228804 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 09-22-2011 |
20110272734 | Light-Emitting Device Substrate - The present invention is a minimal-defect light-emitting device substrate that enables emitted light to issue from a device's substrate side, and is a light-emitting device | 11-10-2011 |
20120058583 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces | 03-08-2012 |
20120061643 | GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND THE METHOD FOR MAKING THE SAME - A GaN-based semiconductor light emitting device | 03-15-2012 |
20120080659 | NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, EPITAXIAL WAFER FOR NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FABRICATING SEMICONDUCTOR LIGHT-EMITTING DEVICE - In the nitride based semiconductor optical device, the strained well layers extend along a reference plane tilting at a tilt angle α from the plane that is orthogonal to a reference axis extending in the direction of the c-axis. A gallium nitride based semiconductor layer is adjacent to a light-emitting layer with a negative piezoelectric field and has a band gap larger than that of a barrier layer. The direction of the piezoelectric field in the well layer is directed in a direction from the n-type layer to the p-type layer, and the piezoelectric field in the gallium nitride based semiconductor layer is directed in a direction from the p-type layer to the n-type layer. Consequently, the valence band, not the conduction band, has a dip at the interface between the light-emitting layer and the gallium nitride based semiconductor layer. | 04-05-2012 |
20120086015 | GROUP III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE - A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device includes a group III nitride semiconductor supporting base, a GaN based semiconductor region, an active layer, and a GaN semiconductor region. The primary surface of the group III nitride semiconductor supporting base is not any polar plane, and forms a finite angle with a reference plane that is orthogonal to a reference axis extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region, grown on the semipolar primary surface, includes a semiconductor layer of, for example, an n-type GaN based semiconductor doped with silicon. A GaN based semiconductor layer of an oxygen concentration of 5×10 | 04-12-2012 |
20120088326 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a group-III nitride semiconductor laser device includes: preparing a substrate of a hexagonal group-III nitride semiconductor, where the substrate has a semipolar primary surface; forming a substrate product having a laser structure, an anode electrode and a cathode electrode, where the laser structure includes the substrate and a semiconductor region, and where the semiconductor region is formed on the semipolar primary surface; scribing a first surface of the substrate product in part in a direction of the a-axis of the hexagonal group-III nitride semiconductor; and carrying out breakup of the substrate product by press against a second surface of the substrate product, to form another substrate product and a laser bar. | 04-12-2012 |
20120114002 | GROUP III NITRIDE SEMICONDUCTOR LASER DIODE, AND METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LASER DIODE - Provided is a Group III nitride semiconductor laser diode with a cladding layer capable of providing high optical confinement and carrier confinement. An n-type Al | 05-10-2012 |
20120128016 | III-NITRIDE SEMICONDUCTOR LASER DIODE - Provided is a III-nitride semiconductor laser diode which is capable of lasing at a low threshold. A support base has a semipolar or nonpolar primary surface. The c-axis Cx of a III-nitride is inclined relative to the primary surface. An n-type cladding region and a p-type cladding region are provided above the primary surface of the support base. A core semiconductor region is provided between the n-type cladding region and the p-type cladding region. The core semiconductor region includes a first optical guide layer, an active layer, and a second optical guide layer. The active layer is provided between the first optical guide layer and the second optical guide layer. The thickness of the core semiconductor region is not less than 0.5 μm. This structure allows the confinement of light into the core semiconductor region without leakage of light into the support base, and therefore enables reduction in threshold current. | 05-24-2012 |
20120142130 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes. | 06-07-2012 |
20120184057 | III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III-NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, where the semipolar primary surface includes a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, where the laser structure includes a substrate and a semiconductor region, and the semiconductor region is formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively. | 07-19-2012 |
20120202304 | III-NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD OF FABRICATING THE III- NITRIDE SEMICONDUCTOR LASER DEVICE - A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively. | 08-09-2012 |
20120299010 | GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE - A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×10 | 11-29-2012 |
20130295704 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE, AND METHOD FOR FABRICATING GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes. | 11-07-2013 |
20130308670 | GROUP-III NITRIDE SEMICONDUCTOR LASER DEVICE - A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a <0001> axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm. | 11-21-2013 |
20140054680 | METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, GROUP III NITRIDE SEMICONDUCTOR DEVICE, METHOD OF PERFORMING THERMAL TREATMENT - A method of forming a group III nitride semiconductor comprises: preparing a group III nitride semiconductor which contains a p-type dopant or an n-type dopant; and performing a treatment of the group III nitride semiconductor by using a reducing gas and a nitrogen source gas to form a conductive group III nitride semiconductor. The treatment includes performing a first treatment of the group III nitride semiconductor by using a first treatment gas including the reducing gas and the nitrogen source gas, which are supplied to a treatment apparatus at a first flow rate and a second flow rate, respectively, and after the first treatment is performed, performing a second treatment of the group III nitride semiconductor by using a second treatment gas including the reducing gas and the nitrogen source gas, which are supplied to the treatment apparatus at a third flow rate and a fourth flow rate, respectively. | 02-27-2014 |
20140203329 | NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTRONIC DEVICE - Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R | 07-24-2014 |